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Diodes Incorporated DMT32M6LDG-7
- Part No.:
- DMT32M6LDG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT32M6LDG-7.pdf
- Description:
- MOSFET 2N-CH 30V 21A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:1,990
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Product details
Overview
DMT32M6LDG-7 from Diodes Incorporated is a symmetric dual N-channel MOSFET in PowerDI3333-8 (Type G) package, rated for 30V VDSS, 2.5 mΩ RDS(ON) @ 10V for Q1 and 2.9 mΩ for Q2, with 47A continuous drain current at TC = +25°C. It delivers low conduction loss and fast switching for high-efficiency synchronous buck converters and motor drive half-bridges.
For engineers reviewing the DMT32M6LDG-7 datasheet, DMT32M6LDG-7 pinout, DMT32M6LDG-7 application, or DMT32M6LDG-7 equivalent, this device supports compact power stages requiring matched dual-channel performance, thermal robustness up to +150°C junction temperature, and RoHS-compliant, halogen-free construction for automotive and industrial DC-DC modules.
Technical Context
This dual MOSFET integrates two electrically isolated but thermally coupled N-channel channels in a single leadless exposed-drain package. Each channel features identical 30V breakdown voltage, gate threshold of 1–2.2V, and body diode forward voltage of 0.8–1.2V at 18A.
Its dynamic parameters include Ciss ≈ 2100 pF (Q1), Coss ≈ 1490 pF (Q2), Crss = 73 pF, and total gate charge of 31.7 nC (Q1) / 32 nC (Q2) at 10V, enabling efficient 500 kHz–1 MHz switching in synchronous rectification and load-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Withstands up to 30V drain-source potential without avalanche conduction in normal operation. |
| RDS(ON) Q1 @ 10V | 2.5 mΩ - Enables <1.2 W conduction loss at 47A, critical for high-current power stage efficiency. |
| RDS(ON) Q2 @ 10V | 2.9 mΩ - Matches Q1 closely (±16% mismatch), supporting balanced current sharing in dual-phase designs. |
| ID Continuous @ TC = 25°C | 47 A per channel - Supports high-power density layouts when mounted on 2 oz copper with thermal pad. |
| Qg @ 10V | 31.7–32 nC - Dictates gate driver strength requirement; ~1.6 A peak needed for 20 ns rise time with 2 Ω driver impedance. |
| RθJC | 14.4 °C/W - Enables direct thermal path from junction to PCB copper, allowing >3 W dissipation with 43°C rise above case. |
| tF | 15.1–15.4 ns - Ensures minimal switching tail loss during turn-off, reducing overlap loss in hard-switched converters. |
Pinout & Package
Package: PowerDI3333-8 (Type G), surface-mount, leadless, with exposed drain pad (pins 1–4 and 5–8 are source/drain terminals; pin 1 marked with "S26" and triangle indicator).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source Q1 | Common low-side return path for first MOSFET; tied to PCB ground plane for lowest inductance. |
| 5, 6, 7, 8 | Source Q2 | Independent low-side return for second MOSFET; enables split-ground routing in half-bridge configurations. |
| Drain Pad (Bottom) | Drain Q1 & Q2 | Shared thermal and electrical node; must be soldered to large copper area for heat extraction and low-inductance high-current path. |
| Gate 1 (Pin 1 side) | Control input Q1 | Connected to driver IC output; requires <32 nC charge delivery and low-impedance trace to minimize ringing. |
| Gate 2 (Pin 5 side) | Control input Q2 | Electrically isolated gate node; layout symmetry critical to match switching timing between channels. |
Key Features
| Feature | Design Value |
|---|---|
| Symmetric dual-channel matching | Q1/Q2 RDS(ON) mismatch ≤16% at 10V, enabling balanced current sharing without external balancing components. |
| Low gate charge asymmetry | Qg difference <0.3 nC between channels ensures near-identical switching timing under matched drive conditions. |
| Exposed drain thermal pad | Reduces RθJC to 14.4 °C/W, allowing >3 W power dissipation with <45°C junction-to-case rise at steady state. |
| Halogen- and antimony-free "Green" construction | Meets <900 ppm Br/Cl (<1500 ppm total), <1000 ppm Sb; compliant with automotive and industrial environmental mandates. |
| Fast body diode recovery | tRR = 35.8–37 ns and QRR = 28.7–29.8 nC - Minimizes reverse-recovery loss in synchronous rectifier applications. |
Applications
| Server VRM Power Stage | Automotive ADAS Camera Power Supply |
|---|---|
|
Use Scenario: High-current, multi-phase buck converter supplying core voltage to X86 or ARM SoCs in data center servers. IC Role / Device Role / Timing Role: Dual-channel high-side/low-side switch pair operating in synchronous rectification mode at 500 kHz–1 MHz. Use Value: 2.5–2.9 mΩ RDS(ON) reduces conduction loss by >35% vs. discrete 30V MOSFETs, improving full-load efficiency to >94%. |
Use Scenario: Compact 5V/3A power supply for 12MP image sensor and ISP in rear-view or surround-view camera modules. IC Role / Device Role / Timing Role: Dual N-channel configured as load switch and synchronous rectifier in buck-boost topology with tight space constraints. Use Value: PowerDI3333-8 footprint saves 40% board area vs. SO-8 duals; thermal pad sustains 42A pulsed current during sensor burst modes. |
| Industrial PLC I/O Module | USB-C PD Sink Controller Power Path |
|
Use Scenario: 24V DC input power distribution with overcurrent protection and hot-swap capability in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Dual-channel used as back-to-back switches for bidirectional current blocking and controlled soft-start sequencing. Use Value: Matched VGS(TH) (1–2.2V) enables precise gate bias control; low leakage (<1 µA) ensures stable off-state isolation. |
Use Scenario: 20V/5A power path management in USB-C PD 3.0 sink devices, supporting programmable power supply negotiation. IC Role / Device Role / Timing Role: One channel as main pass switch, second as reverse-polarity protection and inrush limiter in series configuration. Use Value: 30V rating covers full USB-C PD range (up to 21V); fast tF <15.4 ns prevents shoot-through during dynamic load steps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT32M6UDW-7 | Same die, PowerDI3333-8 (Type W) package with different pinout: Q1/Q2 sources interleaved (pins 1–2/5–6), not grouped. | Requires PCB redesign due to non-identical terminal arrangement; unsuitable for drop-in replacement in existing layouts. | Select only when new design allows optimized gate loop routing and shared source routing is not required. |
| DMN3029LSD-13 | Single-channel 30V MOSFET (2.9 mΩ @ 10V), SO-8 package; no integrated dual structure or matched pairing. | Needs two separate devices and additional layout area; lacks thermal coupling and channel matching benefits. | Choose only if design requires independent gate control or failsafe isolation between channels. |
Compared with DMT32M6LDG-7, DMT32M6UDW-7 offers identical electrical specs but incompatible pin mapping, while DMN3029LSD-13 sacrifices integration, thermal synergy, and channel matching-making the DMT32M6LDG-7 optimal for space-constrained, high-efficiency dual-switch applications where layout reuse and thermal co-location matter.
Availability
DMT32M6LDG-7 is available at Aetrix Electronics and suitable for server VRMs, automotive ADAS camera supplies, industrial PLC I/O modules, and USB-C PD sink power paths requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.
Supply support for DMT32M6LDG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with design, manufacturing, and test facilities certified to IATF 16949 and ISO 9001 standards.
The DMT32M6LDG belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing, automotive, and industrial power systems where thermal performance and channel matching are critical.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DMT32M6LDG-7 has an operating junction temperature range of –55°C to +150°C. For continuous operation, thermal design must ensure TJ does not exceed +150°C under worst-case ambient and power dissipation conditions, verified using RθJC = 14.4°C/W and measured case temperature.
Can Q1 and Q2 be operated with independent gate drives?
Yes-Q1 and Q2 are fully isolated N-channel MOSFETs with separate gate, source, and drain terminals. Their gates accept independent PWM signals, enabling use in half-bridge, synchronous buck, or dual-switch topologies without internal coupling or shared control constraints.
Is the PowerDI3333-8 (Type G) package compatible with standard reflow profiles?
Yes-the PowerDI3333-8 (Type G) is qualified for lead-free reflow per J-STD-020 Level 1 moisture sensitivity, supporting peak temperatures up to 260°C. Its matte tin annealed finish ensures reliable solderability per MIL-STD-202, Method 208.
Does this part meet AEC-Q101 qualification for automotive use?
No-the DMT32M6LDG-7 is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMT32M6LDGQ-7) with PPAP documentation, AEC-Q101 stress testing, and IATF 16949 manufacturing; consult Diodes' automotive product definitions for qualified alternatives.
DMT32M6LDG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Ta), 47A (Tc)
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2101pF @ 15V
- Power - Max:
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type G)
DMT32M6LDG-7 FAQ
1.How can I place an order for DMT32M6LDG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT32M6LDG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT32M6LDG-7 reliable?
The price and inventory of DMT32M6LDG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT32M6LDG-7 is usually 5 days.
3.What payment methods are accepted for DMT32M6LDG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT32M6LDG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT32M6LDG-7?
DMT32M6LDG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT32M6LDG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT32M6LDG-7?
For technical support, including DMT32M6LDG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT32M6LDG-7 requirements.
6.How does Aetrix verify that DMT32M6LDG-7 is sourced from the original manufacturer or authorized distributors?
All DMT32M6LDG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT32M6LDG-7 meets industry standards.
7.What is the process for return or replacement of DMT32M6LDG-7?
All DMT32M6LDG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT32M6LDG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT32M6LDG-7 part is unused and in its original packaging.
Return procedure for DMT32M6LDG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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