Diodes Incorporated DMT34M1LPS-13

Overview

DMT34M1LPS-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in PowerDI5060-8 package, rated for 30V V_DSS, 3.2mΩ R_DS(ON) @ 10V V_GS, and 100A I_D at T_C = +25°C. It delivers low conduction loss and high pulsed current capability (250A IDM), optimized for high-efficiency DC-DC converters in server VRMs and notebook power stages.

For engineers reviewing the DMT34M1LPS-13 datasheet, DMT34M1LPS-13 pinout, DMT34M1LPS-13 application, or DMT34M1LPS-13 equivalent, key selection criteria include R_DS(ON) at 4.5V (5.2mΩ), Q_gd × R_DS(ON) figure-of-merit, thermal resistance R_θJC = 2.5°C/W, and 100% unclamped inductive switching rating.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its gate charge profile (Q_g = 39nC @ 10V, Q_gd = 7.0nC) supports high-frequency synchronous buck operation up to 1MHz.

The device integrates a robust body diode with t_RR = 22ns and Q_RR = 27nC, enabling efficient reverse recovery in hard-switched topologies. Thermal design is anchored by a low R_θJC of 2.5°C/W and an exposed drain pad for direct PCB heat sinking.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - thermally enhanced 8-pin surface-mount package with exposed drain paddle for low-junction-to-case thermal resistance (2.5°C/W).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3803PBF and SiR626DP, DMT34M1LPS-13 uniquely combines 100A current rating, 2.5°C/W thermal resistance, and certified UIS ruggedness in a 5mm × 6mm footprint-making it optimal for high-power-density, high-reliability DC-DC stages where thermal headroom and transient immunity are critical.

Availability

DMT34M1LPS-13 is available at Aetrix Electronics and suitable for server VRM phase legs, notebook CPU core power supplies, and industrial DC-DC modules requiring stable component supply, long-term lifecycle support, and traceable green sourcing.

Supply support for DMT34M1LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions.

The DMT34M1LPS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, high-frequency DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum safe operating junction temperature for DMT34M1LPS-13?

The absolute maximum junction temperature is +150°C, validated across all electrical parameters in the datasheet. Operation at this limit requires strict thermal design: the R_θJC of 2.5°C/W mandates a case temperature ≤60°C to maintain TJ ≤150°C at 42W dissipation. Derating curves in Figure 12 confirm DC operation is limited to 17A at TA = +70°C on standard FR-4.

Does DMT34M1LPS-13 support gate drive from a 3.3V controller?

No-its gate threshold voltage V_GS(TH) ranges from 1.0V to 3.0V, but R_DS(ON) is not specified below 4.5V. At 3.3V V_GS, typical R_DS(ON) exceeds 12mΩ (inferred from Figure 4 extrapolation), causing excessive conduction loss. It requires ≥4.5V gate drive for reliable 80A operation per datasheet specifications.

How is the PowerDI5060-8 package mounted for optimal thermal performance?

Optimal thermal mounting requires soldering the exposed drain paddle to a minimum 1-inch square 2oz copper thermal pad on the PCB bottom layer, per Note 6 in the datasheet. The recommended pad layout (X3 = 4.42mm, Y5 = 3.81mm, G1 = 0.82mm) must be followed to achieve the rated R_θJA = 58°C/W and avoid solder voiding that degrades R_θJC.

Is DMT34M1LPS-13 qualified for automotive applications?

It is not AEC-Q101 qualified. While its -55°C to +150°C operating range overlaps automotive Grade 2, Diodes Incorporated does not list it in their AEC-Q101 product catalog, and the datasheet lacks automotive-specific stress test data (e.g., HTGB, HTRB, temperature cycling). For ADAS or infotainment power supplies, use Diodes' AEC-Q101-certified equivalents like DMT6006LPS.