Diodes Incorporated DMT34M8LFDE-13

Overview

DMT34M8LFDE-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, featuring 4 mΩ R_DS(ON) at V_GS = 10 V, 19 A continuous drain current at T_A = +25°C, and low gate threshold voltage (1–2.5 V). It serves as a high-efficiency power switch in compact DC-DC converters and load-switching circuits.

For engineers reviewing the DMT34M8LFDE-13 datasheet, DMT34M8LFDE-13 pinout, DMT34M8LFDE-13 application, or DMT34M8LFDE-13 equivalent, key selection criteria include on-resistance at 4.5 V drive, thermal resistance (R_θJA = 55 °C/W with thermal pad), SOA limits under pulsed conditions, and RoHS/Green compliance for space-constrained industrial and consumer power stages.

Technical Context

This MOSFET employs a trench-gate process optimized for low R_DS(ON) while maintaining fast switching via low gate charge (Q_g = 15.4 nC at V_GS = 10 V) and minimal output capacitance (C_oss = 876 pF). Its 1.9 Ω gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many 5–12 V logic-driven applications.

The device integrates a body diode with 0.7–1.0 V forward voltage at 1 A and 29.4 ns reverse recovery time, enabling synchronous rectification and bidirectional current handling in half-bridge configurations where shoot-through risk is managed by gate drive sequencing.

Key Specifications

Pinout & Package

U-DFN2020-6 (Type E) is a 2.0 mm × 2.0 mm × 0.6 mm leadless surface-mount package with an exposed drain pad on the bottom for thermal conduction. The package uses matte tin–annealed copper leadframe and complies with J-STD-020 Level 1 moisture sensitivity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT34M8LFDE-13, DMT34M8LFG-7 offers identical electrical performance with smaller reel quantity, while DMN3020LFD-13 trades significant R_DS(ON) and current capability for lower unit cost-making it viable only in thermally relaxed, sub-7 A designs.

Availability

DMT34M8LFDE-13 is available at Aetrix Electronics and suitable for USB Power Delivery switches, industrial PLC output stages, portable medical sensor power rails, and smart home battery management systems requiring stable component supply and verified green compliance.

Supply support for DMT34M8LFDE-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and load-switching applications in consumer, industrial, and computing end equipment.

FAQ

What is the maximum safe operating temperature for DMT34M8LFDE-13?

The device supports junction temperatures from –55°C to +150°C. Its absolute maximum rating is TJ = +150°C, and thermal derating begins above +125°C. With R_θJA = 55 °C/W on a properly designed 1-inch² copper pad, sustained 2.2 W dissipation is achievable at +25°C ambient-reducing linearly as ambient rises.

Does DMT34M8LFDE-13 require a gate resistor for typical 3.3 V MCU drive?

No external gate resistor is required when driven directly from a 3.3 V or 5 V MCU GPIO, provided layout minimizes gate loop inductance. The device's 1.9 Ω intrinsic gate resistance and low Q_g (7.3 nC at 4.5 V) allow clean switching without oscillation, though a 5–10 Ω series resistor may be added for EMI suppression in noisy environments.

Can DMT34M8LFDE-13 be used in synchronous rectification topologies?

Yes-the MOSFET's low R_DS(ON) and fast body diode (t_RR = 29.4 ns, Q_RR = 19.2 nC) make it suitable for secondary-side synchronous rectification in isolated DC-DC converters up to ~500 kHz. Gate drive must be precisely timed to avoid shoot-through, and dead-time control is essential.

Is DMT34M8LFDE-13 qualified for automotive applications?

No-this part is not AEC-Q101 qualified. While it shares the same U-DFN2020-6 package and green material set as automotive-grade variants, Diodes explicitly states that automotive qualification (PPAP, IATF 16949, AEC-Q101) requires separate part numbers and change-controlled manufacturing. Use only in industrial or consumer applications unless requalified.