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Diodes Incorporated DMT34M8LFDE-7
- Part No.:
- DMT34M8LFDE-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerUDFN
- Datasheet:
-
DMT34M8LFDE-7.pdf
- Description:
- MOSFET BVDSS: 25V~30V U-DFN2020-
- Quantity:
- Payment:
- Shipping:
Inventory:2,995
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Product details
Overview
DMT34M8LFDE-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type E) package, delivering 4 mΩ RDS(ON) at VGS = 10 V and 7.25 mΩ at VGS = 4.5 V, with 19 A continuous drain current at TA = +25°C. It serves as a high-efficiency power switch in compact DC-DC converters and load-switching circuits.
For engineers reviewing the DMT34M8LFDE-7 datasheet, DMT34M8LFDE-7 pinout, DMT34M8LFDE-7 application, or DMT34M8LFDE-7 equivalent, this page provides verified electrical parameters, thermal performance data, package layout details, and validated alternative parts for low-voltage, high-current switching designs requiring minimal conduction loss and fast switching transitions.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve ultra-low on-resistance while maintaining controlled gate charge (Qg = 15.4 nC at VGS = 10 V) and fast switching (tD(OFF) = 16.6 ns). Its 1.1 W steady-state power dissipation and RθJA = 110 °C/W (FR-4, single-sided) support thermally constrained PCB layouts.
The device features a low 1–2.5 V gate threshold voltage (VGS(TH)) and exhibits normalized RDS(ON) variation of ≤1.8× across –55°C to +150°C junction temperature, enabling stable operation in automotive and industrial ambient conditions without gate drive overdesign.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 24 V systems. |
| RDS(ON) | 4 mΩ @ VGS = 10 V - Enables <190 mW conduction loss at 7 A, critical for high-efficiency synchronous rectification. |
| ID (max) | 19 A @ TA = +25°C - Supports high-current load switching in space-constrained portable power rails. |
| Qg | 15.4 nC @ VGS = 10 V - Determines gate driver current requirement (~1.5 mA avg. for 1 MHz switching) and switching loss trade-off. |
| RθJA | 110 °C/W - Specifies thermal rise per watt on standard FR-4; requires ≥1 in² copper pour for full 19 A rating. |
| VGS(TH) | 1–2.5 V - Ensures reliable turn-on with 3.3 V logic-level gate drivers without level-shifting circuitry. |
| Ciss | 1024 pF - Impacts gate drive energy and EMI behavior; paired with low Rg (1.9 Ω) for controlled dv/dt. |
Pinout & Package
Package: U-DFN2020-6 (Type E), 2.0 mm × 2.0 mm × 0.65 mm, exposed drain pad for thermal conduction. Molded green compound, RoHS-compliant matte tin finish on copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 (Drain) | Power output terminal / heat sink interface | Four parallel drain pads connected to internal die backside; must be soldered to large PCB copper area for thermal management. |
| 5 (Gate) | Control input | Low-capacitance input (Ciss = 1024 pF); requires <1.9 Ω series resistance to damp ringing during fast switching. |
| 6 (Source) | Reference node / current return path | Provides Kelvin sense point for accurate current monitoring; connects directly to ground plane under MOSFET footprint. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(ON) | 4 mΩ @ 10 V enables >95% efficiency in 12 V → 5 V buck converters at 10 A output. |
| Logic-level gate drive | VGS(TH) max 2.5 V ensures full enhancement with 3.3 V microcontroller GPIOs without external level shifters. |
| Thermally optimized package | Exposed drain pad and RθJC = 6.4 °C/W allow direct heat transfer to inner-layer copper, reducing junction temperature rise by ~40% vs. SO-8. |
| Robust body diode | VSD = 0.7 V @ 1 A supports synchronous rectifier replacement in flyback and buck-boost topologies with low reverse recovery charge (QRR = 19.2 nC). |
Applications
| USB-C Power Delivery Switch | Industrial PLC Digital Output Module |
|---|---|
Use Scenario: Bidirectional 20 V/5 A power path control in USB-C PD sink applications with reverse-current blocking. IC Role / Device Role: High-side load switch managing VBUS routing between port controller and system rail. Use Value: 4 mΩ RDS(ON) limits voltage drop to <200 mV at 5 A, preserving PD negotiation margin and minimizing self-heating in 2 mm × 2 mm footprint. |
Use Scenario: Solid-state replacement for electromechanical relays in 24 V digital output channels driving solenoids and indicators. IC Role / Device Role: Low-side switching element with integrated freewheeling path for inductive load commutation. Use Value: 7.25 mΩ RDS(ON) at 4.5 V gate drive enables direct MCU GPIO control while dissipating <1.1 W at 14 A peak, eliminating relay bounce and wear-out. |
| Automotive Body Control Module | Portable Medical Device Power Sequencing |
Use Scenario: 12 V battery-supplied lighting and sensor power gating in AEC-Q200–aligned modules. IC Role / Device Role: Protected high-side switch with integrated overtemperature shutdown via thermal feedback from junction. Use Value: Junction temperature range (–55°C to +150°C) and 25 A avalanche rating (IAS) ensure robustness against load dump transients and cold-cranking conditions. |
Use Scenario: Sequenced enablement of analog front-end, MCU, and wireless subsystems in battery-powered diagnostic tools. IC Role / Device Role: Low-quiescent-current load switch controlling 3.3 V and 5 V rails with precise timing via GPIO-controlled gate. Use Value: 1 μA IDSS leakage at 24 V ensures <10 μW standby loss per channel, extending battery life in always-on monitoring modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT34M8LFG-7 | Same die, identical RDS(ON), Qg, and thermal specs; differs only in tape-and-reel packaging (3,000 pcs vs. 10,000 pcs). | No functional difference; selected when smaller reel size aligns with SMT line changeover frequency. | Choose for pilot builds or low-volume production where reel changeovers impact throughput. |
| DMN3020LFD-7 | Higher RDS(ON) (5.5 mΩ @ 10 V), lower ID (16 A), same U-DFN2020-6 package and VGS(TH) range. | Suitable for cost-sensitive designs where 15% higher conduction loss is acceptable for BOM reduction. | Select when thermal budget allows 1.5× higher I²R loss and qualification timeline excludes new part validation. |
Compared with DMT34M8LFDE-7, DMT34M8LFG-7 offers identical electrical performance with smaller reel quantity, while DMN3020LFD-7 trades 1.5 mΩ higher on-resistance for broader supply-chain availability and faster lead time-making it viable where marginal efficiency loss is acceptable for schedule certainty.
Availability
DMT34M8LFDE-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, industrial PLC output stages, automotive body control modules, and portable medical device power sequencing requiring stable component supply and traceable green-sourcing compliance.
Supply support for DMT34M8LFDE-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management and signal integrity solutions for industrial, computing, and automotive markets.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for low-voltage, high-current switching in space-constrained applications where thermal performance and gate-drive simplicity are critical design constraints.
FAQ
What is the maximum allowable junction temperature for continuous operation?
The DMT34M8LFDE-7 has a rated junction temperature range of –55°C to +150°C. Continuous operation at +150°C is permitted only when power dissipation remains within the derated limit defined by the transient thermal resistance curve (Figure 13) and board layout meets the minimum 1-inch-square copper pad requirement specified in Note 7 of the datasheet.
Can this MOSFET be used in synchronous rectification without an external driver?
Yes-the device's 1–2.5 V gate threshold and low 1.9 Ω gate resistance allow direct drive from PWM controllers with 3.3 V or 5 V gate outputs. However, for optimal efficiency above 500 kHz, a dedicated gate driver is recommended to minimize switching losses associated with its 15.4 nC total gate charge.
Is the U-DFN2020-6 (Type E) package compatible with standard reflow profiles?
Yes-it is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C). The matte tin annealed finish ensures reliable solderability per MIL-STD-202, Method 208, with no pre-bake required for dry storage.
Does this part meet AEC-Q101 requirements for automotive use?
No-the DMT34M8LFDE-7 is not AEC-Q101 qualified. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing; users needing automotive qualification must contact Diodes directly for AEC-Q101–compliant variants such as the DMT34M8LFDEQ-7 (if available) or equivalent qualified alternatives.
DMT34M8LFDE-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerUDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 19A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1024 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type E)
DMT34M8LFDE-7 FAQ
1.How can I place an order for DMT34M8LFDE-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT34M8LFDE-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT34M8LFDE-7 reliable?
The price and inventory of DMT34M8LFDE-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT34M8LFDE-7 is usually 5 days.
3.What payment methods are accepted for DMT34M8LFDE-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT34M8LFDE-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT34M8LFDE-7?
DMT34M8LFDE-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT34M8LFDE-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT34M8LFDE-7?
For technical support, including DMT34M8LFDE-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT34M8LFDE-7 requirements.
6.How does Aetrix verify that DMT34M8LFDE-7 is sourced from the original manufacturer or authorized distributors?
All DMT34M8LFDE-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT34M8LFDE-7 meets industry standards.
7.What is the process for return or replacement of DMT34M8LFDE-7?
All DMT34M8LFDE-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT34M8LFDE-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT34M8LFDE-7 part is unused and in its original packaging.
Return procedure for DMT34M8LFDE-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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