Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT35M4LFDF-13

Name: DMT35M4LFDF-13
Brand: Diodes Incorporated
SKU: DMT35M4LFDF-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: DMT35M4LFDF-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMT35M4LFDF-13.pdf

Description:: MOSFET BVDSS: 25V~30V U-DFN2020-

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,133

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

DMT35M4LFDF-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 6 mΩ R_DS(ON) at V_GS = 10 V and 10.5 mΩ at V_GS = 4.5 V, rated for 13 A continuous drain current at T_A = +25°C. It serves as a low-profile power switch in DC-DC converters, load switches, and battery protection circuits.

For engineers reviewing the DMT35M4LFDF-13 datasheet, DMT35M4LFDF-13 pinout, DMT35M4LFDF-13 application, or DMT35M4LFDF-13 equivalent, key selection criteria include its 0.6 mm profile, 4 mm² PCB footprint, low gate threshold voltage (1.15–2.5 V), and thermal resistance of 73 °C/W under enhanced layout conditions.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for simultaneous low on-resistance and fast switching performance. Its R_DS(ON) remains stable across junction temperatures from –55°C to +150°C, with typical values of 4.9 mΩ at V_GS = 10 V and ID = 20 A.

The device integrates a body diode with 0.7 V forward voltage at IS = 1 A and exhibits 50 pF reverse transfer capacitance (Crss) at V_DS = 15 V, enabling efficient synchronous rectification and high-frequency PWM control in compact power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche conduction; suitable for 24 V rail systems with margin.
R_DS(ON) @ 10 V	6 mΩ - Enables <100 mW conduction loss at 10 A, critical for thermally constrained layouts.
R_DS(ON) @ 4.5 V	10.5 mΩ - Ensures robust turn-on with standard logic-level drivers (e.g., 3.3 V/5 V microcontrollers).
Q_g @ 10 V	14.9 nC - Low gate charge reduces driver power demand and switching losses in high-frequency operation.
T_J Range	–55°C to +150°C - Supports automotive under-hood and industrial ambient environments without derating.
P_D (enhanced layout)	1.7 W - Achievable with 2 oz copper and thermal bias pad; enables >1 A sustained current in space-constrained designs.

Pinout & Package

Package: U-DFN2020-6 (Type F), 2.0 mm × 2.0 mm × 0.6 mm, exposed drain pad for thermal dissipation. Molded green compound, NiPdAu-plated terminals, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Four parallel source terminals reduce bond wire inductance and improve current sharing in high-di/dt switching.
5, 6	Drain (exposed pad)	Thermally coupled to PCB copper; primary heat path-requires soldered thermal pad for R_θJA = 73 °C/W rating.
Gate	Control input	Single terminal (Pin 1 side); low 2 Ω gate resistance minimizes ringing and simplifies driver design.

Key Features

Feature	Design Value
Ultra-low profile	0.6 mm height enables use in ultra-thin portable electronics and stacked PCB assemblies.
Minimal PCB footprint	4 mm² area reduces board real estate cost and improves layout density in multi-MOSFET power stages.
Low gate threshold	V_GS(TH) = 1.15–2.5 V ensures reliable turn-on with 3.3 V logic and supports partial-gate-drive fault tolerance.
Green compliance	Halogen- and antimony-free, RoHS 3 compliant (<900 ppm Br/Cl, <1000 ppm Sb), meeting strict environmental mandates.

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Bidirectional overcurrent and short-circuit protection in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path; body diode enables reverse-current blocking during charging.

Use Value: 10.5 mΩ R_DS(ON) at 4.5 V gate drive minimizes voltage drop and self-heating during 5–8 A load currents.

Use Scenario: Hot-swap and fault-isolation switching in USB-C PD 3.0 power paths up to 20 V/5 A.

IC Role / Device Role / Timing Role: Low-inductance, low-R_DS(ON) pass transistor enabling fast enable/disable with <10 ns propagation delay.

Use Value: 14.9 nC total gate charge allows full turn-on within 1 μs using standard 15 Ω gate drivers.

DC-DC Synchronous Rectifier

Industrial Load Switch

Use Scenario: Secondary-side rectification in 12 V input buck converters powering FPGA or ASIC core rails.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by controller's complementary PWM signal.

Use Value: 50 pF Crss and 925 pF Coss minimize shoot-through risk and improve light-load efficiency above 92%.

Use Scenario: Controlled power sequencing for I/O peripherals in programmable logic controllers (PLCs).

IC Role / Device Role / Timing Role: Low-thermal-resistance (73 °C/W) high-side switch enabling 10 A steady-state loads without heatsink.

Use Value: 1.7 W power dissipation rating supports continuous operation at 70°C ambient with minimal derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3020LFG-7	R_DS(ON) = 7.5 mΩ @ 4.5 V; same U-DFN2020-6 package; higher Q_g (17.5 nC)	Slightly lower efficiency at 5–8 A due to higher conduction loss; less sensitive to gate drive strength variation	Select when tighter V_GS(TH) distribution (1.0–2.2 V) is required for marginal gate drive margins.
SI2302DS-T1-BE3	R_DS(ON) = 12 mΩ @ 4.5 V; SOT-23 package; R_θJA = 200 °C/W	Higher thermal resistance limits continuous current to ~3.5 A; unsuitable for >1 W power dissipation	Choose only for low-power, cost-sensitive applications where board space permits larger thermal pads or forced air cooling.

Compared with DMN3020LFG-7 and SI2302DS-T1-BE3, DMT35M4LFDF-13 delivers superior thermal performance (73 vs. ≥140 °C/W), lowest R_DS(ON) at logic-level drive, and smallest footprint-making it optimal for high-density, high-efficiency 24 V system power switches.

Availability

DMT35M4LFDF-13 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery modules, and industrial PLC load switching requiring stable component supply and long-term lifecycle support.

Supply support for DMT35M4LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, space-constrained power conversion and load switching in consumer, computing, and industrial applications.

FAQ

What is the maximum safe operating temperature for DMT35M4LFDF-13?

The device has a specified junction temperature range of –55°C to +150°C. Under recommended PCB layout (2 oz copper, thermal pad), its thermal resistance is 73 °C/W, allowing operation up to +70°C ambient while maintaining T_J ≤ 150°C at 10 A continuous drain current. Exceeding this requires derating per Figure 7 in the datasheet.

Does DMT35M4LFDF-13 support gate drive from a 3.3 V microcontroller?

Yes. With a gate threshold voltage range of 1.15–2.5 V and R_DS(ON) = 10.5 mΩ at V_GS = 4.5 V, the MOSFET fully enhances using standard 3.3 V GPIO outputs. For guaranteed low-loss operation, ensure gate drive rise time <100 ns and use a series resistor ≤10 Ω to dampen ringing.

How is thermal performance affected if the exposed drain pad is not soldered?

Without soldering the exposed drain pad, thermal resistance degrades from 73 °C/W to 147 °C/W (per Note 5). This halves allowable continuous current-e.g., from 10 A to ~5 A at +70°C ambient-and increases risk of thermal runaway during pulsed loads. Full thermal pad connection is mandatory for rated performance.

Is DMT35M4LFDF-13 qualified for automotive applications?

No. While the device meets RoHS 3 and halogen-free requirements, it is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMT35M4LFDFQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended reliability testing-contact Diodes directly for qualified alternatives.

DMT35M4LFDF-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1009 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 860mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMT35M4LFDF-13 FAQ

1.How can I place an order for DMT35M4LFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT35M4LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT35M4LFDF-13 reliable?

The price and inventory of DMT35M4LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT35M4LFDF-13 is usually 5 days.

3.What payment methods are accepted for DMT35M4LFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT35M4LFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT35M4LFDF-13?

DMT35M4LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT35M4LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT35M4LFDF-13?

For technical support, including DMT35M4LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT35M4LFDF-13 requirements.

6.How does Aetrix verify that DMT35M4LFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMT35M4LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT35M4LFDF-13 meets industry standards.

7.What is the process for return or replacement of DMT35M4LFDF-13?

All DMT35M4LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT35M4LFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT35M4LFDF-13 part is unused and in its original packaging.

Return procedure for DMT35M4LFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…