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Diodes Incorporated DMT35M4LFDF4-13
- Part No.:
- DMT35M4LFDF4-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerXDFN
- Datasheet:
-
DMT35M4LFDF4-13.pdf
- Description:
- MOSFET BVDSS: 25V~30V X2-DFN2020
- Quantity:
- Payment:
- Shipping:
Inventory:4,930
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Product details
Overview
DMT35M4LFDF4-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in X2-DFN2020-6 (Type W) package, featuring 9 mΩ RDS(ON) @ VGS = 10 V, 12 A continuous drain current at TA = +25°C, and low 0.4 mm profile. It serves as a high-efficiency power switch in compact DC-DC converters and load management circuits.
For engineers reviewing the DMT35M4LFDF4-13 datasheet, DMT35M4LFDF4-13 pinout, DMT35M4LFDF4-13 application, or DMT35M4LFDF4-13 equivalent, key selection criteria include its 4.5 V gate threshold compatibility with 5 V/3.3 V logic, 13.5 mΩ RDS(ON) @ 4.5 V for low-voltage drive, and thermal resistance of 57 °C/W under enhanced PCB layout - critical for thermally constrained portable and automotive subsystems.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low on-resistance while preserving fast switching performance. Its gate charge values (Qg = 14.9 nC @ 10 V, Qgd = 3.4 nC) support efficient hard-switching in synchronous buck stages up to 1 MHz.
The device integrates a body diode with 0.7 V forward voltage (VSD) at 1 A and 29.4 ns reverse recovery time (tRR), enabling reliable freewheeling in inductive loads without external Schottky supplementation in moderate-frequency applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage compatible with 24 V nominal input rails and transient overvoltage tolerance. |
| RDS(ON) | 9 mΩ @ VGS = 10 V - Enables ≤100 mW conduction loss at 10 A, supporting high-current power path efficiency. |
| ID (max) | 12 A @ TA = +25°C - Sustains full-load operation in 5–12 V point-of-load regulators with minimal derating. |
| VGS(TH) | 1.15–2.5 V - Ensures robust turn-on with standard 3.3 V GPIO or PWM controllers without level-shifting. |
| Qg | 14.9 nC @ VGS = 10 V - Determines gate drive power requirement and switching transition time in high-frequency designs. |
| RθJA | 57 °C/W - Achievable with 2 oz copper thermal pad and bottom-layer bias; enables 2.19 W dissipation in space-constrained layouts. |
| tRR | 29.4 ns - Limits shoot-through risk and EMI during body-diode commutation in half-bridge topologies. |
Pinout & Package
Package: X2-DFN2020-6 (Type W), 2.0 mm × 2.0 mm × 0.4 mm, exposed drain pad for thermal conduction. Molded green compound, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source | Common source connection; four parallel pins reduce bondwire inductance and improve current sharing. |
| 5 | Gate | Single-point gate input; low 2 Ω gate resistance minimizes ringing and simplifies RC snubber design. |
| 6 (exposed pad) | Drain | Thermally and electrically connected drain terminal; must be soldered to large copper pour for thermal management. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile footprint | 0.4 mm height - fits beneath 0.5 mm board-to-board connectors and inside ultra-thin consumer enclosures. |
| PCB area efficiency | 4 mm² total footprint - reduces board real estate by >40% vs. SO-8 equivalents while maintaining comparable current rating. |
| Lead-free & halogen-free | RoHS 3 compliant, <900 ppm Br+Cl, <1000 ppm Sb - meets automotive and medical regulatory requirements without sacrificing thermal reliability. |
| Enhanced thermal performance | RθJC = 9.6 °C/W - enables direct heat transfer from junction to PCB plane, critical for fanless industrial modules. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Bidirectional overcurrent and short-circuit protection in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side N-channel switch controlling discharge path; driven by dedicated protection IC with 3.3 V logic output. Use Value: 13.5 mΩ RDS(ON) @ 4.5 V ensures <150 mW loss at 3 A load, extending runtime and reducing thermal stress on adjacent fuel gauges. | Use Scenario: VBUS path switching in USB-C receptacles supporting 3 A @ 5 V and 1.5 A @ 20 V. IC Role / Device Role / Timing Role: High-side power switch enabling/disabling VBUS per USB PD contract negotiation. Use Value: Fast 6.9 ns fall time and 15 ns off-delay minimize cross-conduction risk during dynamic voltage transitions between PDOs. |
| DC-DC Synchronous Buck Converter | Automotive LED Driver |
Use Scenario: High-efficiency 12 V → 3.3 V step-down conversion for FPGA I/O banks in automotive infotainment head units. IC Role / Device Role / Timing Role: Lower-side synchronous rectifier in 500 kHz buck regulator, paired with external 30 V high-side FET. Use Value: 9 mΩ RDS(ON) @ 10 V cuts conduction loss by 35% vs. discrete Schottky alternatives, improving full-load efficiency to >92%. | Use Scenario: Constant-current dimming control for interior ambient lighting using PWM-modulated channel switching. IC Role / Device Role / Timing Role: Low-side current sink switch modulating LED string current at 1–2 kHz PWM frequency. Use Value: 29.4 ns tRR prevents tail current distortion during PWM edges, ensuring accurate dimming linearity across 0.1–100% duty cycle range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT35M4LFB-7 | Same die, but in X1-DFN2020-6 (Type B) package with different pinout and slightly higher RθJA (65 °C/W). | Requires PCB redesign due to non-identical pad layout and terminal numbering; not drop-in replaceable. | Select only when legacy board reuse mandates Type B footprint compatibility. |
| AO3414 | Higher RDS(ON) (20 mΩ @ 4.5 V), larger 2.9 mm × 1.6 mm SOT-23 package, and no exposed drain pad. | Limited to ≤3 A continuous current in same thermal environment; unsuitable for high-density 10 A applications. | Choose only for cost-sensitive, low-current designs where 0.4 mm height is non-critical. |
Compared with DMT35M4LFDF4-13, DMT35M4LFB-7 shares electrical specs but demands layout revision, while AO3414 trades off size, thermal capability, and on-resistance for lower unit cost - making the DMT35M4LFDF4-13 optimal for space- and efficiency-constrained 5–12 A power switches.
Availability
DMT35M4LFDF4-13 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery systems, and DC-DC synchronous buck converters requiring stable component supply and long-term manufacturability.
Supply support for DMT35M4LFDF4-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, low-profile power switching in portable, automotive, and industrial applications where thermal density and board area are critical constraints.
FAQ
What is the maximum safe operating temperature for DMT35M4LFDF4-13?
The device supports junction temperatures from −55°C to +150°C. Under continuous 12 A operation with recommended 2 oz copper thermal pad, peak junction temperature remains below 125°C at ambient 70°C - verified via SOA curves and transient thermal resistance data (Figure 13). Exceeding 150°C risks permanent parametric shift and accelerated wear-out.
Does DMT35M4LFDF4-13 require a gate resistor for stability?
Yes - a 3 Ω series gate resistor is specified in the datasheet's switching time test conditions (tD(ON), tR). This value suppresses gate oscillation caused by the 2 Ω intrinsic gate resistance interacting with PCB trace inductance. Omitting it may cause erratic turn-on, increased EMI, and localized gate oxide stress during fast edge transitions.
Can DMT35M4LFDF4-13 be used in avalanche mode?
Yes - it is rated for 22 A single-pulse avalanche current (IAS) and 25 mJ avalanche energy (EAS) with L = 0.1 mH. These ratings assume low-duty-cycle, controlled-energy events such as inductive load switching transients. Continuous avalanche operation is not supported and will cause irreversible junction damage.
Is the exposed drain pad electrically isolated from other terminals?
No - the exposed pad (Pin 6) is internally connected to the drain terminal. It must be soldered to a PCB copper pour tied to the drain net for both thermal conduction and electrical continuity. Floating or grounding the pad creates a short circuit and immediate device failure.
DMT35M4LFDF4-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerXDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1009 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 910mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN2020-6 (Type W)
DMT35M4LFDF4-13 FAQ
1.How can I place an order for DMT35M4LFDF4-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT35M4LFDF4-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT35M4LFDF4-13 reliable?
The price and inventory of DMT35M4LFDF4-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT35M4LFDF4-13 is usually 5 days.
3.What payment methods are accepted for DMT35M4LFDF4-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT35M4LFDF4-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT35M4LFDF4-13?
DMT35M4LFDF4-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT35M4LFDF4-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT35M4LFDF4-13?
For technical support, including DMT35M4LFDF4-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT35M4LFDF4-13 requirements.
6.How does Aetrix verify that DMT35M4LFDF4-13 is sourced from the original manufacturer or authorized distributors?
All DMT35M4LFDF4-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT35M4LFDF4-13 meets industry standards.
7.What is the process for return or replacement of DMT35M4LFDF4-13?
All DMT35M4LFDF4-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT35M4LFDF4-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT35M4LFDF4-13 part is unused and in its original packaging.
Return procedure for DMT35M4LFDF4-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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