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Diodes Incorporated DMT35M4LFDF4-7
- Part No.:
- DMT35M4LFDF4-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-PowerXDFN
- Datasheet:
-
DMT35M4LFDF4-7.pdf
- Description:
- MOSFET BVDSS: 25V~30V X2-DFN2020
- Quantity:
- Payment:
- Shipping:
Inventory:5,469
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Product details
Overview
DMT35M4LFDF4-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in X2-DFN2020-6 package, delivering 9 mΩ RDS(ON) at VGS = 10 V and 13.5 mΩ at 4.5 V, with 12 A continuous drain current (TA = +25°C). It serves as a low-profile power switch in DC-DC converters and load management circuits where high efficiency and space-constrained PCB layouts are critical.
For engineers reviewing the DMT35M4LFDF4-7 datasheet, DMT35M4LFDF4-7 pinout, DMT35M4LFDF4-7 application, or DMT35M4LFDF4-7 equivalent, key selection criteria include its 0.4 mm profile, 4 mm² footprint, low gate threshold (1.15–2.5 V), thermal resistance of 57 °C/W under enhanced layout, and compliance with AEC-Q101 for automotive-grade reliability when qualified.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low RDS(ON) while preserving fast switching performance-evidenced by 14.9 nC total gate charge at VGS = 10 V and 3.6 ns turn-on delay. Its body diode exhibits 0.7 V forward voltage at 1 A, supporting synchronous rectification and reverse recovery-sensitive topologies.
The device operates across –55°C to +150°C junction temperature range and supports pulsed drain currents up to 80 A (380 μs, 1% duty cycle). Thermal design leverages an exposed drain pad with 9.6 °C/W junction-to-case resistance, enabling efficient heat transfer to PCB copper planes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage before avalanche conduction; suitable for 24 V rail systems with margin. |
| RDS(ON) | 9 mΩ @ VGS = 10 V - Enables <150 mW conduction loss at 12 A, reducing thermal stress in compact power stages. |
| ID (continuous) | 12 A @ TA = +25°C - Supports high-current load switching without external heatsinking on standard FR-4 with thermal bias. |
| Qg | 14.9 nC @ VGS = 10 V - Determines gate drive energy requirement; enables efficient operation with standard 5 V or 3.3 V logic-level drivers. |
| RθJA | 57 °C/W - Achieved with 2 oz copper and 1-inch² thermal pad; defines maximum power dissipation before exceeding 150°C junction limit. |
| VGS(TH) | 1.15–2.5 V - Ensures reliable turn-on with 3.3 V microcontroller GPIOs and compatibility with low-voltage logic interfaces. |
| Ciss | 1009 pF - Influences high-frequency switching losses and EMI behavior; balanced against RDS(ON) for optimal efficiency trade-off. |
Pinout & Package
Package: X2-DFN2020-6 (Type W), 2.0 × 2.0 × 0.4 mm, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), NiPdAu-plated terminals.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | Control input; accepts 0–20 V gate-source swing; low 2 Ω gate resistance minimizes ringing during fast transitions. |
| 2 | Source | Reference node for gate drive and current return path; tied to system ground or low-side sensing point. |
| 3 | Drain | High-side power output node; electrically and thermally connected to exposed pad for conduction and heat sinking. |
| 4 | Drain | Secondary drain connection reinforcing current capacity and thermal path to PCB copper. |
| 5 | Source | Redundant source terminal improving current sharing and reducing bond wire inductance in high-di/dt applications. |
| 6 | Drain | Third drain terminal enhancing thermal coupling and current distribution across the exposed pad area. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low profile (0.4 mm height) | Enables integration into ultra-thin portable electronics and stacked PCB assemblies without mechanical interference. |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 or PowerPAK® 1212-8, supporting miniaturized power modules and wearables. |
| Low RDS(ON) at 4.5 V | Ensures full enhancement with 5 V logic or USB-powered controllers, eliminating need for gate boosters in many applications. |
| Lead-free, halogen-free, antimony-free | Fully compliant with RoHS 3 (2015/863/EU) and JEDEC J-STD-020 Level 1 moisture sensitivity-no bake required pre-reflow. |
| Thermally optimized DFN package | Exposed drain pad delivers 9.6 °C/W RθJC, allowing direct thermal coupling to inner-layer copper planes for improved power density. |
Applications
| USB-C Power Delivery Switch | Automotive Body Control Module |
|---|---|
|
Use Scenario: Bidirectional 20 V/3 A power path control in USB-C PD sink applications requiring reverse current blocking and low-loss insertion. IC Role / Device Role / Timing Role: Low-side load switch managing VBUS routing and fault isolation between port controller and system power rail. Use Value: 13.5 mΩ RDS(ON) at 4.5 V ensures <60 mW loss at 3 A, maintaining thermal safety without derating in sealed enclosures. |
Use Scenario: 12 V battery-fed load switching for LED lighting, window lift motors, and HVAC actuators in passenger compartments. IC Role / Device Role / Timing Role: High-reliability discrete power switch controlled by 3.3 V MCU GPIO, supporting PWM dimming and diagnostic current sensing. Use Value: AEC-Q101 qualification path available and 150°C max junction rating enable operation in under-hood ambient temperatures up to 105°C. |
| Industrial IoT Sensor Node | Portable Medical Device Power Rail |
|
Use Scenario: Battery-powered wireless sensor nodes requiring ultra-low quiescent current and rapid power cycling of RF transceivers and ADC subsystems. IC Role / Device Role / Timing Role: Enable-controlled main power switch isolating non-critical subsystems during sleep mode to extend battery life. Use Value: 1 μA IDSS at 24 V and sub-2.5 V VGS(TH) allow clean cutoff and precise wake-up timing with minimal leakage-induced drift. |
Use Scenario: Isolated power sequencing for analog front-end ICs and low-noise amplifiers in handheld ultrasound or ECG units. IC Role / Device Role / Timing Role: Precision-controlled power switch ensuring monotonic ramp-up and glitch-free enablement of sensitive analog circuitry. Use Value: 29.4 ns reverse recovery time and 19.2 nC QRR minimize voltage overshoot during turn-off, protecting downstream LDOs and ADC references. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | RDS(ON) = 20 mΩ @ 4.5 V; larger SOT-23-6 package (3.0 × 2.8 mm); higher RθJA = 120 °C/W. | Lower current capability (6.5 A) limits use in >5 A loads; better suited for signal-level switching than power delivery. | Select when board space allows larger footprint and thermal budget permits higher conduction loss. |
| DMT6009LPS-13 | RDS(ON) = 9.5 mΩ @ 4.5 V; same X2-DFN2020-6 package but rated for 60 V; higher Ciss = 1320 pF. | Higher voltage rating adds margin for 48 V industrial buses but increases switching loss in 24 V systems. | Prefer for future-proofing in multi-rail designs or where transient overvoltage exceeds 30 V. |
Compared with DMT35M4LFDF4-7, DMN3020LSD-13 trades lower cost and wider availability for significantly higher on-resistance and thermal resistance, while DMT6009LPS-13 offers voltage headroom at the expense of increased gate charge and reduced switching efficiency in 30 V-class applications.
Availability
DMT35M4LFDF4-7 is available at Aetrix Electronics and suitable for USB-C power delivery switches, automotive body control modules, and portable medical device power rails requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMT35M4LFDF4-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion and load-switching applications in consumer, industrial, and automotive end markets.
FAQ
What is the maximum safe operating temperature for DMT35M4LFDF4-7?
The device has a specified junction temperature range of –55°C to +150°C. Under continuous operation with the recommended 2 oz copper thermal pad layout, it sustains 12 A at +25°C ambient. Derating is required above +70°C ambient per the datasheet's ID vs. TA curve-maximum continuous current drops to 10 A at +70°C.
Does DMT35M4LFDF4-7 support logic-level gate drive?
Yes. With a gate threshold voltage range of 1.15–2.5 V and guaranteed RDS(ON) of 13.5 mΩ at VGS = 4.5 V, it fully enhances using standard 3.3 V or 5 V microcontroller GPIOs without requiring level-shifting or gate drivers in most low-to-moderate frequency applications.
How is thermal performance affected by PCB layout?
Thermal resistance varies drastically with layout: RθJA is 138 °C/W on minimal FR-4, but improves to 57 °C/W with 2 oz copper and a 1-inch² thermal pad connected to the exposed drain. Solder mask-defined thermal vias (≥6×0.3 mm) under the pad are essential to achieve the lower value and prevent localized overheating.
Is automotive qualification available for this part?
While DMT35M4LFDF4-7 itself is not pre-qualified to AEC-Q101, Diodes Incorporated offers automotive-grade variants of this platform (e.g., DMT35M4LFDF4Q) with PPAP documentation, IATF 16949 manufacturing, and full AEC-Q101 test reports. Contact Diodes or Aetrix for qualified alternatives meeting automotive change-control requirements.
DMT35M4LFDF4-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-PowerXDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1009 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 910mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- X2-DFN2020-6 (Type W)
DMT35M4LFDF4-7 FAQ
1.How can I place an order for DMT35M4LFDF4-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT35M4LFDF4-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT35M4LFDF4-7 reliable?
The price and inventory of DMT35M4LFDF4-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT35M4LFDF4-7 is usually 5 days.
3.What payment methods are accepted for DMT35M4LFDF4-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT35M4LFDF4-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT35M4LFDF4-7?
DMT35M4LFDF4-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT35M4LFDF4-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT35M4LFDF4-7?
For technical support, including DMT35M4LFDF4-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT35M4LFDF4-7 requirements.
6.How does Aetrix verify that DMT35M4LFDF4-7 is sourced from the original manufacturer or authorized distributors?
All DMT35M4LFDF4-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT35M4LFDF4-7 meets industry standards.
7.What is the process for return or replacement of DMT35M4LFDF4-7?
All DMT35M4LFDF4-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT35M4LFDF4-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT35M4LFDF4-7 part is unused and in its original packaging.
Return procedure for DMT35M4LFDF4-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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