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Diodes Incorporated DMT35M4LFDF-7
- Part No.:
- DMT35M4LFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT35M4LFDF-7.pdf
- Description:
- MOSFET BVDSS: 25V~30V U-DFN2020-
- Quantity:
- Payment:
- Shipping:
Inventory:2,943
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Product details
Overview
DMT35M4LFDF-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, featuring 6 mΩ RDS(ON) at VGS = 10 V and 10.5 mΩ at VGS = 4.5 V, rated for 13 A continuous drain current at TA = +25°C, and optimized for high-efficiency power management in space-constrained DC-DC converters and load switches.
For engineers reviewing the DMT35M4LFDF-7 datasheet, DMT35M4LFDF-7 pinout, DMT35M4LFDF-7 application, or DMT35M4LFDF-7 equivalent, this device is selected for low-profile (<0.6 mm), high-current switching where gate threshold voltage (1.15–2.5 V), thermal resistance (73 °C/W with thermal pad), and fast switching (tF = 6.9 ns) directly impact system efficiency and PCB area utilization.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining robust switching performance. Its 0.6 mm profile and 4 mm² footprint are engineered for compact, thermally constrained layouts such as portable power modules and multi-rail PMIC output stages.
The device supports logic-level drive (VGS(TH) max 2.5 V) and delivers 14.9 nC total gate charge at VGS = 10 V, enabling efficient operation with standard 3.3 V or 5 V gate drivers. Its 25 mJ avalanche energy rating ensures reliability under transient overvoltage conditions in inductive load switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum drain-source blocking voltage for 12 V/24 V rail switching applications |
| RDS(ON) | 6 mΩ @ VGS = 10 V - Enables <100 mW conduction loss at 10 A, critical for thermal budget in sealed enclosures |
| ID (max) | 13 A @ TA = +25°C - Supports high-current load switching without external heatsinking in FR-4 layouts with thermal bias |
| Qg | 14.9 nC @ VGS = 10 V - Reduces gate driver power consumption and switching losses in 500 kHz–1 MHz SMPS designs |
| RθJA | 73 °C/W - Achieved with 2 oz copper + 1-inch² thermal pad; enables 1.7 W power dissipation in compact board areas |
| VGS(TH) | 1.15–2.5 V - Ensures full enhancement with 3.3 V microcontroller GPIOs, eliminating need for level-shifting circuitry |
| Ciss | 1009 pF - Low input capacitance minimizes Miller effect and improves turn-on speed in high-frequency synchronous rectifiers |
Pinout & Package
Package: U-DFN2020-6 (Type F), 2.0 × 2.0 × 0.6 mm, exposed drain pad for thermal conduction. Molded green compound, NiPdAu-plated terminals, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control input; accepts 0–10 V logic-level signals; low 2 Ω gate resistance reduces ringing risk |
| Pins 2, 3, 4, 5 | Source | Common return path; tied to internal source metallization; requires low-inductance PCB routing |
| Pin 6 + Exposed Pad | Drain | Main power output terminal; exposed pad must be soldered to large copper pour for thermal and current handling |
Key Features
| Feature | Design Value |
|---|---|
| 0.6 mm profile | Enables integration into ultra-thin consumer electronics (e.g., USB-C PD adapters, wearables) without height interference |
| 4 mm² PCB footprint | Reduces board area by >40% vs. SO-8 equivalents, supporting dense multi-phase buck converter layouts |
| Low RDS(ON) at 4.5 V | 10.5 mΩ enables efficient operation with 5 V gate drivers in automotive body control modules and industrial I/O |
| Lead-free & halogen-free | Complies with RoHS 3 (2015/863/EU) and JEDEC J-STD-020 Level 1, eliminating reflow compatibility concerns |
| 150 °C max junction temp | Supports operation in under-hood automotive environments and sealed industrial enclosures without derating |
Applications
| USB-C Power Delivery Switching | Automotive Body Control Module |
|---|---|
Use Scenario: Bidirectional 20 V/5 A power path switching in portable chargers and docking stations. IC Role / Device Role / Timing Role: High-side load switch controlling VBUS routing between source and sink ports. Use Value: 6 mΩ RDS(ON) limits voltage drop to <100 mV at 5 A, preserving PD negotiation accuracy and minimizing heat in 10 mm² PCB area. |
Use Scenario: 12 V load switching for LED lighting, window motors, and HVAC actuators in modern vehicle ECUs. IC Role / Device Role / Timing Role: Low-side driver for PWM-controlled loads requiring fast turn-off (tF = 6.9 ns) to reduce EMI. Use Value: 1.15–2.5 V gate threshold ensures reliable turn-on with 3.3 V CAN/LIN transceiver I/O, eliminating external level shifters. |
| Industrial DC-DC Converter Output Stage | Portable Medical Device Power Management |
Use Scenario: Synchronous rectification in 5 V/3 A isolated flyback or buck-boost converters for factory automation sensors. IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode to improve efficiency above 85% at light-to-full load. Use Value: 14.9 nC Qg allows clean 1 MHz switching with minimal gate driver loss, increasing overall converter efficiency by 2.3%. |
Use Scenario: Battery-powered infusion pump requiring silent, low-heat power sequencing and fault-isolated load control. IC Role / Device Role / Timing Role: Isolation switch between Li-ion battery and motor driver, controlled by MCU GPIO. Use Value: 0.6 mm height and 4 mm² footprint enable placement beneath display assemblies, meeting strict mechanical envelope constraints. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT35M4LFB-7 | Same die, but in U-DFN2020-6 (Type B) package with different pinout (Pin 1 = Source, Pin 6 = Drain) | Requires PCB redesign due to reversed source/drain terminal assignment; not drop-in compatible | Select only when legacy board layout uses Type B footprint and thermal pad alignment matches |
| DMN3020LFD-7 | Higher RDS(ON) (20 mΩ @ 4.5 V), lower ID (6.5 A), same package and VDSS | Suitable for lower-current (<5 A) applications where cost optimization outweighs efficiency gain | Prefer for cost-sensitive consumer IoT nodes where 6 mΩ advantage yields <0.5% system efficiency improvement |
Compared with DMT35M4LFDF-7, DMT35M4LFB-7 demands layout revision due to inverted pin mapping, while DMN3020LFD-7 trades 67% higher on-resistance for lower unit cost-making it viable only where thermal headroom exceeds 40°C and peak current stays below 5 A.
Availability
DMT35M4LFDF-7 is available at Aetrix Electronics and suitable for USB-C power delivery systems, automotive body control modules, and industrial DC-DC converters requiring stable component supply, high-reliability lead-free sourcing, and consistent U-DFN2020-6 (Type F) packaging.
Supply support for DMT35M4LFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' "PowerMOS" portfolio, specifically engineered for high-efficiency, low-profile power switching in battery-powered and thermally constrained applications-emphasizing RDS(ON), gate charge, and thermal performance over legacy SO-8 alternatives.
FAQ
What is the maximum allowable PCB temperature rise for DMT35M4LFDF-7 at 10 A continuous current?
With the recommended 2 oz copper thermal pad (1 inch²), the device achieves RθJA = 73 °C/W. At 10 A and 6 mΩ RDS(ON), conduction loss is 0.6 W, resulting in ~44 °C junction-to-ambient rise. Assuming 25 °C ambient, junction temperature reaches ~69 °C-well within the -55 to +150 °C operating range and leaving 81 °C margin before thermal shutdown.
Can DMT35M4LFDF-7 be used in avalanche-rated circuits without external snubbers?
Yes-the device is rated for 22 A single-pulse avalanche current and 25 mJ avalanche energy (L = 0.1 mH). This allows safe operation in inductive load switching (e.g., solenoid drivers) without snubbers, provided pulse duration and duty cycle keep cumulative junction temperature below 150 °C per the transient thermal resistance curve (Figure 13).
Is the exposed drain pad electrically isolated from other pins?
No-the exposed pad is internally connected to Pin 6 (Drain) and must be soldered to a PCB copper pour designated as the drain net. It is not insulated; connecting it to ground or source will cause short-circuit failure. Thermal vias beneath the pad must route exclusively to the drain net layer.
Does DMT35M4LFDF-7 meet AEC-Q101 requirements for automotive use?
No-this specific part number is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMT35M4LFDFQ-7) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening. For automotive applications, contact Diodes' automotive team to obtain the qualified version and change-control documentation.
DMT35M4LFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1009 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 860mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT35M4LFDF-7 FAQ
1.How can I place an order for DMT35M4LFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT35M4LFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT35M4LFDF-7 reliable?
The price and inventory of DMT35M4LFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT35M4LFDF-7 is usually 5 days.
3.What payment methods are accepted for DMT35M4LFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT35M4LFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT35M4LFDF-7?
DMT35M4LFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT35M4LFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT35M4LFDF-7?
For technical support, including DMT35M4LFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT35M4LFDF-7 requirements.
6.How does Aetrix verify that DMT35M4LFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMT35M4LFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT35M4LFDF-7 meets industry standards.
7.What is the process for return or replacement of DMT35M4LFDF-7?
All DMT35M4LFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT35M4LFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT35M4LFDF-7 part is unused and in its original packaging.
Return procedure for DMT35M4LFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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