Diodes Incorporated DMT35M4LFVW-13

Overview

DMT35M4LFVW-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 6 mΩ R_DS(ON) at V_GS = 10 V and 48 A continuous drain current at T_C = +70°C. It supports high-efficiency power management and analog switching with 100% production-tested UIS robustness and thermally optimized thermal resistance (R_θJC = 3.9°C/W).

For engineers reviewing the DMT35M4LFVW-13 datasheet, DMT35M4LFVW-13 pinout, DMT35M4LFVW-13 application, or DMT35M4LFVW-13 equivalent, key selection criteria include low R_DS(ON) at 4.5 V drive, compact PowerDI3333-8 footprint, junction-to-case thermal performance, and validated unclamped inductive switching capability.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching characteristics: total gate charge is 16.1 nC at V_GS = 10 V, with turn-off delay of 16.8 ns under standard test conditions (V_DD = 15 V, R_g = 3 Ω). Its gate threshold voltage (1.15–2.5 V) enables reliable logic-level drive compatibility.

The device integrates a body diode with 0.7–1.0 V forward voltage at 1 A and supports avalanche energy of 25 mJ (L = 0.1 mH). Thermal design is enabled by an exposed drain pad and R_θJC = 3.9°C/W, allowing direct heat transfer to PCB copper planes.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (SWP), surface-mount, thermally enhanced with exposed drain pad. Molded green compound, UL 94V-0 rated, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT35M4LDW-13, the -LFVW variant adds RoHS 3 and halogen-free compliance without sacrificing electrical specs; versus SiR872DP-T1-GE3, it trades 1.2 mΩ higher R_DS(ON) for 33% smaller board area and identical production UIS validation.

Availability

DMT35M4LFVW-13 is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and automotive body control modules requiring stable component supply, long-term lifecycle support, and green manufacturing compliance.

Supply support for DMT35M4LFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerDI® portfolio, engineered specifically for high-current, space-constrained power switching applications where thermal efficiency, small footprint, and production-validated ruggedness are critical.

FAQ

What is the maximum continuous drain current at T_A = +70°C?

The DMT35M4LFVW-13 delivers 13 A continuous drain current at ambient temperature +70°C with standard FR-4 mounting (2 oz copper, no thermal bias). For higher current, thermal bias to a 1-inch square copper plate enables 48 A at case temperature +70°C - this reflects actual PCB-level thermal design, not theoretical die limits.

Does this MOSFET require a gate resistor for stability?

Yes - a 3 Ω gate resistor is specified in the datasheet for dynamic characterization (e.g., t_D(OFF) = 16.8 ns). For EMI-sensitive applications, a 10–22 Ω resistor is recommended to dampen ringing caused by gate-drain capacitance (Crss = 27 pF) and PCB trace inductance.

Can DMT35M4LFVW-13 be used in linear mode (e.g., as a pass element)?

No - its Safe Operating Area (SOA) curve (Figure 12) shows limited linear-region capability: at V_DS = 10 V, maximum pulse current drops to ~10 A for 10 ms. It is optimized for switching, not analog regulation; use dedicated LDOs or linear regulators instead.

Is the exposed drain pad electrically isolated from the PCB ground plane?

No - the exposed drain pad is internally connected to all drain pins (1–7) and must be soldered to a PCB copper pour tied to the system's high-side power rail (e.g., 12 V or 24 V). It is not isolated; using it as a thermal path to ground will cause short-circuit failure.