Diodes Incorporated DMT35M4LPSW-13

Overview

DMT35M4LPSW from Diodes Incorporated is an N-channel enhancement-mode MOSFET in PowerDI5060-8/SWP package, designed for high-efficiency DC-DC converters and power-management functions. It delivers 71.1A continuous drain current at TC = +25°C, 5.5mΩ R_DS(ON) @ V_GS = 10V, and 9.6mΩ @ V_GS = 4.5V, with 30V V_DSS rating and 100% unclamped inductive switching capability - deployed in backlighting and compact power rails.

For engineers reviewing the DMT35M4LPSW datasheet, DMT35M4LPSW pinout, DMT35M4LPSW application, or DMT35M4LPSW equivalent, this device supports high-density thermal design in space-constrained DC-DC stages where low conduction loss, fast switching (t_F = 5.5ns), and robust avalanche energy (E_AS = 31mJ) are critical selection criteria.

Technical Context

This MOSFET employs advanced trench-gate silicon technology optimized for low Q_gd × R_DS(ON) figure-of-merit (FOM), enabling high-frequency synchronous buck operation with minimal switching loss. Its gate threshold voltage (V_GS(TH) = 1–2.5V) ensures stable turn-on under 4.5V logic-level drive.

The PowerDI5060-8/SWP package integrates an exposed drain pad for direct thermal coupling to PCB copper, achieving R_θJC = 3°C/W and supporting >50A steady-state current when mounted on a 1-inch² 2oz copper thermal pad. Internal body diode exhibits V_SD = 0.7–1.2V at I_S = 2A.

Key Specifications

Pinout & Package

Package: PowerDI5060-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded green compound (UL 94V-0), matte tin annealed terminals, moisture sensitivity level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT35M4LPSW-7, identical performance makes it a drop-in packaging alternative; versus DMTH3516LPSW, the DMT35M4LPSW provides lower R_DS(ON), lower Q_g, and better efficiency in 12–24V applications - critical for thermal-limited space-constrained designs.

Availability

DMT35M4LPSW is available at Aetrix Electronics and suitable for LED backlight drivers, point-of-load converters, and automotive body control modules requiring stable component supply and consistent thermal performance across production batches.

Supply support for DMT35M4LPSW includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in consumer, computing, and automotive applications - emphasizing low R_DS(ON), fast switching, and robust package thermal performance.

FAQ

What is the maximum continuous drain current at T_C = +70°C?

The DMT35M4LPSW supports 56.9A continuous drain current at case temperature +70°C per datasheet Note 6. This rating assumes thermal connection to a 2oz copper pad with ≥1 inch² area and proper solder void control - critical for sustaining high-current operation in enclosed enclosures without forced airflow.

Does this MOSFET require gate resistors for EMI control?

Yes - although R_g = 1.9Ω is internal, external gate resistors (typically 2–10Ω) are recommended to damp ringing and limit dV/dt during hard switching. The low Q_gd (2.3nC) minimizes Miller effect, but layout parasitics can still induce oscillation without controlled gate drive impedance.

Is the PowerDI5060-8/SWP package compatible with standard reflow profiles?

Yes - rated for moisture sensitivity level 1 (MSL-1), the package supports JEDEC J-STD-020-compliant lead-free reflow profiles up to 260°C peak. Pre-bake is not required, and the green molding compound remains stable through multiple thermal cycles without delamination or warpage.

Can this MOSFET be used in synchronous rectification for flyback converters?

Yes - its low V_GS(TH) (1–2.5V), fast t_F = 5.5ns, and low R_DS(ON) make it suitable for secondary-side synchronous rectification in 24–48V output flyback designs. However, ensure gate drive timing avoids shoot-through; use dedicated SR controller with adaptive delay (e.g., AP43110) for reliable operation.