Diodes Incorporated DMT35M7LFV-13

Overview

DMT35M7LFV-13 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, delivering 5.0 mΩ R_DS(ON) at V_GS = 10 V and 76 A continuous drain current at T_C = +25°C. It features ESD-protected gate, thermally efficient small-form-factor packaging, and is optimized for high-efficiency power management and analog switching in space-constrained DC-DC converters and load switches.

For engineers reviewing the DMT35M7LFV-13 datasheet, DMT35M7LFV-13 pinout, DMT35M7LFV-13 application, or DMT35M7LFV-13 equivalent, key selection criteria include its low R_DS(ON) at 4.5 V drive, 2.9 °C/W junction-to-case thermal resistance, SOA-rated pulsed drain current of 90 A, and compatibility with compact PCB layouts requiring <33% board area vs. SO-8.

Technical Context

This MOSFET employs planar trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching performance-evidenced by 36 nC total gate charge at V_GS = 10 V and 18.0 ns turn-off delay time. Its gate threshold voltage (1.0–2.4 V) enables robust 3.3 V and 5 V logic-level drive compatibility.

The device integrates an intrinsic body diode with 1.2 V forward voltage at 1 A and 16 ns reverse recovery time, supporting synchronous rectification and bidirectional current handling in buck converters and hot-swap circuits. Thermal design is enabled by the exposed drain pad and 2.9 °C/W R_θJC, allowing direct heatsinking through the PCB copper plane.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Dimensions: 3.30 mm × 3.30 mm × 0.80 mm (L × W × H); moisture sensitivity level 1 per J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT35M7LFV-13, DMT35M7UFD-13 trades board area for thermal headroom, while DMN3052LFG-7 sacrifices on-resistance for reduced gate charge-making the original optimal for space-constrained, high-current, medium-frequency (300–800 kHz) power stages.

Availability

DMT35M7LFV-13 is available at Aetrix Electronics and suitable for DC-DC converter power stages, hot-swap controllers, and USB-C power delivery switches requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for DMT35M7LFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and Malaysia.

This MOSFET belongs to Diodes' PowerDI® portfolio-engineered specifically for high-current, low-voltage power conversion where thermal efficiency and board-area reduction are primary system constraints.

FAQ

What is the maximum safe operating temperature for DMT35M7LFV-13?

The device has a rated junction temperature range of –55°C to +150°C. For reliable long-term operation, peak junction temperature should be limited to ≤135°C under worst-case ambient and power dissipation conditions. This requires verifying thermal design using the 2.9 °C/W R_θJC value and actual PCB copper area per the recommended pad layout.

Can DMT35M7LFV-13 be used with 3.3 V gate drive?

Yes-it delivers 8.5 mΩ R_DS(ON) at V_GS = 4.5 V and maintains functional gate threshold (1.0–2.4 V) well within 3.3 V logic levels. However, full 76 A current capability requires adequate thermal management, as R_DS(ON) increases with temperature and lower V_GS.

Does this MOSFET require external gate resistors?

No external gate resistor is required for basic switching, thanks to its integrated ESD protection and moderate 36 nC gate charge. However, a 5–10 Ω series resistor is recommended to dampen ringing in high-dI/dt applications (e.g., >50 A/µs) and prevent gate oscillation during fast edge transitions.

How does the PowerDI3333-8 package compare to SO-8 thermally?

PowerDI3333-8 achieves 63 °C/W R_θJA (with 2 oz copper thermal pad), versus ~130 °C/W for standard SO-8-nearly 2× better thermal performance. Its 3.3 mm × 3.3 mm footprint occupies only 33% of the board area of SO-8, enabling denser power stage layouts without compromising thermal reliability.