Diodes Incorporated DMT35M7LFV-7

Overview

DMT35M7LFV-7 from Diodes Incorporated is a 30V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, delivering 5.0 mΩ R_DS(ON) at V_GS = 10 V and 76 A continuous drain current at T_C = +25°C. It features ESD-protected gate, thermally efficient small-form-factor packaging, and is optimized for high-efficiency power management and analog switching in space-constrained DC-DC converters and load switches.

For engineers reviewing the DMT35M7LFV-7 datasheet, DMT35M7LFV-7 pinout, DMT35M7LFV-7 application, or DMT35M7LFV-7 equivalent, key selection criteria include its low on-resistance at 4.5 V drive (8.5 mΩ), junction-to-case thermal resistance of 2.9°C/W, avalanche energy rating of 39 mJ, and compatibility with compact PCB layouts requiring <33% board area versus SO-8.

Technical Context

This MOSFET employs trench-gate silicon process technology to achieve ultra-low R_DS(ON) while maintaining fast switching performance: t_D(ON) = 5.3 ns, t_R = 12.3 ns, and Q_g = 36 nC at V_GS = 10 V. Its gate threshold voltage (1.0–2.4 V) enables reliable turn-on with standard logic-level drivers.

The device integrates an intrinsic body diode with V_SD = 0.7–1.2 V at I_S = 1 A and supports pulsed drain currents up to 90 A. Thermal design is enabled by exposed drain pad construction, yielding R_θJC = 2.9°C/W and R_θJA = 63°C/W under 2 oz copper thermal bias conditions.

Key Specifications

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad. Molded green compound, UL 94V-0 rated, 0.072 g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT35M7LFV-7, DMT35M7UFD-7 trades board area for superior thermal handling, while DMTH3516LPS-13 prioritizes lowest R_DS(ON) at the cost of higher switching loss - making DMT35M7LFV-7 optimal for space-constrained 100–300 kHz applications balancing conduction and switching losses.

Availability

DMT35M7LFV-7 is available at Aetrix Electronics and suitable for DC-DC converters, USB-C power delivery systems, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for DMT35M7LFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Power Management Discrete portfolio, engineered specifically for high-current, low-voltage switching in space-constrained power conversion and load management applications.

FAQ

What is the maximum gate-source voltage rating for DMT35M7LFV-7?

The absolute maximum V_GS rating is ±20 V. Operation beyond this risks permanent gate oxide damage. For reliable 3.3 V or 5 V logic-level drive, the gate threshold voltage range (1.0–2.4 V) ensures full enhancement while staying well within safe margins. Gate drive circuits must limit transient overshoot using series resistance or clamping diodes.

Can DMT35M7LFV-7 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(ON) (normalized resistance increases with junction temperature, per Figure 6) enables inherent current sharing. Parallel operation requires matched gate drive layout, symmetrical PCB copper pours, and individual gate resistors (≥1 Ω) to suppress oscillation. Derate total current by 15% for two devices and 25% for three or more.

Is the PowerDI3333-8 (Type UX) package compatible with standard reflow profiles?

Yes - it is qualified for JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 60 sec max). The matte tin finish on copper leadframe ensures solderability per MIL-STD-202, Method 208. Recommended pad layout (D2 = 2.50 mm, E2 = 1.80 mm) is published in Diodes' package outline document.

Does DMT35M7LFV-7 include integrated gate protection diodes?

No - it features ESD protection on the gate terminal (HBM ≥2 kV), but no internal gate-to-source or gate-to-drain Zener clamps. External gate protection (e.g., 12 V TVS between G and S) is recommended in high-noise environments like automotive or industrial motor drives to prevent gate oxide rupture from transients exceeding ±20 V.