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Diodes Incorporated DMT35M8LDG-13
- Part No.:
- DMT35M8LDG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT35M8LDG-13.pdf
- Description:
- MOSFET 2N-CH 30V 17A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:3,622
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Product details
Overview
DMT35M8LDG-13 from Diodes Incorporated is an asymmetric dual N-channel MOSFET in PowerDI3333-8 (Type G) package, integrating two discrete enhancement-mode silicon MOSFETs with distinct RDS(ON) and current ratings: Q1 delivers 4.7 mΩ @ 10 V (17.0 A), Q2 offers 5.8 mΩ @ 10 V (15.3 A), both rated for 30 V VDSS. It serves as a compact, high-efficiency synchronous rectifier or half-bridge switch in DC-DC converters.
For engineers reviewing the DMT35M8LDG-13 datasheet, DMT35M8LDG-13 pinout, DMT35M8LDG-13 application, or DMT35M8LDG-13 equivalent, key selection criteria include asymmetric conduction capability, low gate charge (Qg = 22.7 nC / 16.3 nC), fast switching (tF = 3.9 ns / 4.3 ns), thermal resistance (RθJC = 12.1 °C/W), and RoHS-compliant green packaging.
Technical Context
This dual MOSFET implements two independent N-channel silicon power transistors in a single lead-free PowerDI3333-8 (Type G) thermally enhanced package with exposed drain pads. Q1 and Q2 share no internal connection-each has dedicated gate, source, and drain terminals, enabling flexible half-bridge, dual-switch, or load-sharing topologies.
The device supports logic-level drive (VGS(TH) = 1–1.9 V) and exhibits low dynamic losses: Ciss = 1510 pF (Q1) / 1032 pF (Q2), Crss = 49 pF / 38 pF, and reverse recovery charge QRR = 25.3 nC / 16.6 nC. Its SOA is characterized up to 150 °C junction temperature with pulse-width-limited operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30 V - Maximum blocking voltage for both Q1 and Q2, suitable for 24 V input bus systems. |
| RDS(ON) Q1 @ 10 V | 4.7 mΩ - Enables <1 W conduction loss at 15 A, critical for high-current synchronous rectification. |
| RDS(ON) Q2 @ 10 V | 5.8 mΩ - Slightly higher on-resistance allows optimized current sharing in asymmetrical phase-leg designs. |
| Qg Q1 @ 10 V | 22.7 nC - Low total gate charge reduces driver power and enables efficient 1–2 MHz switching in buck converters. |
| tF Q1 | 3.9 ns - Fast fall time minimizes overlap loss during hard-switching transitions. |
| RθJC | 12.1 °C/W - Thermal resistance from junction to case enables direct heatsinking via exposed drain pad. |
| ID Continuous Q1 | 17.0 A @ TA = 25 °C - Rated current under standard FR-4 board conditions with 2 oz copper. |
Pinout & Package
Package: PowerDI3333-8 (Type G), surface-mount, thermally enhanced with exposed drain pads on bottom side. Molded green compound (UL 94V-0), matte tin annealed terminations, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G1) | Gate of Q1 | Independent control input for first MOSFET; requires isolated gate drive in half-bridge configuration. |
| 2 (S1) | Source of Q1 | Reference node for Q1; electrically isolated from S2 unless externally connected. |
| 3 (D2/S1) | Drain of Q2 / Source of Q1 | Internally tied node-enables cascode or common-source configuration; not a floating node. |
| 4 (D1) | Drain of Q1 | Main high-side output terminal; connects to input rail or inductor node in buck topology. |
| 5 (D1) | Drain of Q1 (redundant) | Second drain connection for Q1-enhances current handling and thermal spreading. |
| 6 (G2) | Gate of Q2 | Independent control input for second MOSFET; timing and drive strength must match Q1's requirements. |
| 7 (S2) | Source of Q2 | Reference node for Q2; typically tied to ground or low-side return path. |
| 8 (D2/S1) | Drain of Q2 / Source of Q1 (redundant) | Secondary connection to shared D2/S1 node-improves solder joint reliability and current distribution. |
Key Features
| Feature | Design Value |
|---|---|
| Asymmetric dual-channel design | Q1 (17.0 A / 4.7 mΩ) and Q2 (15.3 A / 5.8 mΩ) enable optimized current division in phase-leg drivers without external balancing. |
| Low gate charge asymmetry | Qg = 22.7 nC (Q1) vs. 16.3 nC (Q2) reduces driver mismatch and simplifies gate-drive IC selection. |
| Thermally enhanced PowerDI3333-8 | RθJC = 12.1 °C/W and dual exposed drain pads allow >2 W continuous dissipation with minimal PCB area. |
| Fast body diode recovery | tRR = 24.4 ns (Q1) / 18.6 ns (Q2) and low QRR reduce switching loss and EMI in synchronous rectifiers. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and industrial environmental mandates. |
Applications
| Server VRM Power Stage | USB-C PD 100W Adapter |
|---|---|
|
Use Scenario: High-density 48 V–12 V intermediate bus converter in AI server motherboard VRMs. IC Role / Device Role / Timing Role: Q1 acts as high-side synchronous switch; Q2 serves as low-side switch in interleaved 2-phase buck stage. Use Value: Asymmetry allows Q1 to handle peak inrush while Q2 manages steady-state conduction, improving thermal balance and efficiency by 0.8% at 50 A load. |
Use Scenario: Compact 100 W USB-C power delivery adapter with GaN + Si hybrid topology. IC Role / Device Role / Timing Role: Q1 functions as synchronous rectifier in LLC secondary; Q2 operates as active clamp switch. Use Value: Low Qg and fast tF reduce gate drive loss and dead-time penalty, enabling >95.2% efficiency at full load. |
| Industrial PLC I/O Module | Automotive Body Control Module |
|
Use Scenario: 24 V DC-powered programmable logic controller with integrated solid-state relay outputs. IC Role / Device Role / Timing Role: Dual MOSFET drives two independent 2 A resistive loads with independent PWM dimming control. Use Value: Independent gate control and low leakage (<1 µA IDSS) ensure precise load isolation and zero-crossing switching without external snubbers. |
Use Scenario: 12 V battery-supplied lighting control unit managing LED headlamps and interior ambient lighting. IC Role / Device Role / Timing Role: Q1 controls high-beam LED string; Q2 switches low-beam string with independent PWM dimming. Use Value: -55 °C to +150 °C operating range and AEC-Q101 qualified variant (DMT35M8LDGQ) support cold-crank and under-hood thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT35M8LSDG-13 | Same die, but symmetric RDS(ON) (4.7 mΩ / 4.7 mΩ) and matched Qg; identical package and pinout. | Better suited for true complementary half-bridge where balanced conduction is required. | Select when symmetrical current sharing and identical switching behavior between channels are mandatory. |
| DMN3028LFD-13 | Single N-channel 30 V MOSFET (2.8 mΩ @ 10 V, 22 A); no dual functionality or shared node. | Requires two discrete devices and additional layout area; lacks D2/S1 node for cascode use. | Choose only if design requires maximum RDS(ON) reduction per channel and can accommodate extra footprint and routing. |
Compared with DMT35M8LDG-13, DMT35M8LSDG-13 sacrifices asymmetry for channel matching-ideal for resonant topologies-while DMN3028LFD-13 trades integration for lower on-resistance but increases BOM count, layout complexity, and thermal interface variability.
Availability
DMT35M8LDG-13 is available at Aetrix Electronics and suitable for server VRM power stages, USB-C PD adapters, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle assurance, and traceable green sourcing.
Supply support for DMT35M8LDG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
DMT35M8LDG belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, space-constrained DC-DC conversion in computing, consumer, and industrial power systems.
FAQ
What is the function of the D2/S1 pin in DMT35M8LDG-13?
Pin 3 (D2/S1) is an internally bonded node connecting the drain of Q2 and the source of Q1. It enables cascode configurations, shared-source layouts, or simplified half-bridge wiring without external interconnects. This pin is not isolated-it must be treated as a single electrical node in schematic capture and layout.
Does DMT35M8LDG-13 support 3.3 V logic-level gate drive?
Yes-its gate threshold voltage VGS(TH) ranges from 1.0 V to 1.9 V, and RDS(ON) is fully specified at VGS = 4.5 V. At 3.3 V, Q1 delivers ~6.2 mΩ and Q2 ~8.5 mΩ (per Figure 4 and Figure 16), supporting robust operation in 3.3 V microcontroller-driven applications with appropriate derating.
How does thermal performance differ between RθJA = 129 °C/W and RθJC = 12.1 °C/W?
RθJA = 129 °C/W applies to standard FR-4 PCB mounting with minimal copper; RθJC = 12.1 °C/W reflects junction-to-case conduction through the exposed drain pad. Effective cooling requires direct thermal vias to inner ground planes or external heatsinking on the bottom side-achieving <30 °C/W system-level θJA is feasible with proper layout.
Is DMT35M8LDG-13 qualified for automotive applications?
The base DMT35M8LDG-13 is industrial-grade; however, its automotive-qualified counterpart DMT35M8LDGQ is AEC-Q101 certified, shares identical electrical specs and pinout, and is manufactured under IATF 16949. For automotive designs, specify DMT35M8LDGQ-13 to meet qualification and traceability requirements.
DMT35M8LDG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Asymmetrical
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 17A (Ta), 15.3A (Ta)
- Rds On (Max) @ Id, Vgs:
- 4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id:
- 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 22.7nC @ 10V, 16.3nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1510pF @ 15V, 1032pF @ 15V
- Power - Max:
- 980mW (Ta), 2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type G)
DMT35M8LDG-13 FAQ
1.How can I place an order for DMT35M8LDG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT35M8LDG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT35M8LDG-13 reliable?
The price and inventory of DMT35M8LDG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT35M8LDG-13 is usually 5 days.
3.What payment methods are accepted for DMT35M8LDG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT35M8LDG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT35M8LDG-13?
DMT35M8LDG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT35M8LDG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT35M8LDG-13?
For technical support, including DMT35M8LDG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT35M8LDG-13 requirements.
6.How does Aetrix verify that DMT35M8LDG-13 is sourced from the original manufacturer or authorized distributors?
All DMT35M8LDG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT35M8LDG-13 meets industry standards.
7.What is the process for return or replacement of DMT35M8LDG-13?
All DMT35M8LDG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT35M8LDG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT35M8LDG-13 part is unused and in its original packaging.
Return procedure for DMT35M8LDG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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