Diodes Incorporated DMT4002LPS-13

Overview

DMT4002LPS-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI5060-8 (Type K) package, optimized for high-current, low-R_DS(ON) power switching. It delivers 1.8 mΩ @ V_GS = 10V and 3.1 mΩ @ V_GS = 4.5V at 25A, supports 100A continuous drain current at T_C = +25°C, and features 100% unclamped inductive switching capability-used in automotive DC-DC converters and body control modules.

For engineers reviewing the DMT4002LPS-13 datasheet, DMT4002LPS-13 pinout, DMT4002LPS-13 application, or DMT4002LPS-13 equivalent, key selection criteria include R_DS(ON) at 4.5V gate drive, thermal resistance (R_θJC = 1.2°C/W), avalanche energy rating (E_AS = 115 mJ), and PowerDI5060-8 thermal pad layout compatibility.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve ultra-low on-resistance while maintaining fast switching performance. Its 8-pin PowerDI5060-8 package integrates an exposed drain thermal pad and dual-source/drain paralleling to reduce conduction loss and improve thermal dissipation under high-current pulse conditions.

The device operates with a gate threshold voltage of 1–3 V and exhibits stable R_DS(ON) over temperature (±20% variation from −55°C to +150°C). Dynamic parameters-including Q_g = 116.1 nC (10V), C_iss = 6771 pF, and t_F = 28 ns-support efficient synchronous rectification and high-frequency DC-DC conversion up to 1 MHz.

Key Specifications

Pinout & Package

DMT4002LPS-13 uses the PowerDI5060-8 (Type K) surface-mount package: 5.15 mm × 6.15 mm footprint, 1.0 mm max height, exposed drain thermal pad on bottom, and 8 terminals arranged as dual-source/drain parallel configuration with integrated gate connection.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT4002LPS-13, DMTH4002LPS-13 offers lower conduction loss and higher avalanche energy but at slightly higher cost; DMT4002LPS-7 provides identical performance in smaller reel format for low-volume or prototyping use.

Availability

DMT4002LPS-13 is available at Aetrix Electronics and suitable for automotive engine management systems, body control electronics, and high-current DC-DC converters requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for DMT4002LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

DMT4002LPS-13 belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-reliability power conversion in automotive and industrial applications where thermal performance and avalanche ruggedness are critical.

FAQ

What is the maximum junction temperature and how is it validated?

The DMT4002LPS-13 has a rated junction temperature range of −55°C to +150°C. This is validated per JEDEC JESD22-A108 through temperature cycling, high-temperature operating life (HTOL), and thermal transient testing. The 150°C limit is supported by R_θJC = 1.2°C/W and SOA curves showing safe operation up to 100A at T_C = 25°C with single-pulse durations ≥10 µs.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes-a gate resistor is required to control dV/dt and prevent oscillation. For typical 300–500 kHz DC-DC operation, a 2.2–3.3 Ω resistor is recommended to achieve t_R ≈ 23 ns and t_F ≈ 28 ns as specified. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses. Layout-dependent parasitic inductance must also be minimized.

Can DMT4002LPS-13 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(ON) (normalized R_DS(ON) increases with temperature) enables stable current sharing in parallel operation. Designers must match gate drive impedance, minimize source inductance imbalance, and ensure symmetrical thermal coupling. Derating to 80–85% of total rated current per device is recommended for reliability.

Is the exposed drain pad electrically isolated or connected internally?

The exposed drain pad is electrically connected to all drain terminals (pins 1–6 and 8) and forms the primary thermal and electrical return path. It must be soldered to a large copper pour tied to system ground or the main DC bus negative rail. No isolation is provided-the pad is not insulated and must be treated as live drain potential during operation.