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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT4008LFDF-13

Name: DMT4008LFDF-13
Brand: Diodes Incorporated
SKU: DMT4008LFDF-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT4008LFDF-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: DMT4008LFDF-13.pdf

Description:: MOSFET BVDSS: 31V~40V U-DFN2020-

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Product details

Overview

DMT4008LFDF-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for high-efficiency power management with R_DS(ON) = 9.5 mΩ @ V_GS = 10V, I_D = 11.8 A, and fast switching (t_F = 6.4 ns). It serves as a synchronous rectifier or main switch in compact DC-DC converters and LED backlighting circuits.

For engineers reviewing the DMT4008LFDF-13 datasheet, DMT4008LFDF-13 pinout, DMT4008LFDF-13 application, or DMT4008LFDF-13 equivalent, key selection criteria include low-profile thermal performance (R_θJA = 63 °C/W on 1-inch² copper), gate threshold voltage stability over temperature, and Q_GD × R_DS(ON) figure-of-merit for hard-switched topologies.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve low R_DS(ON) while maintaining robust avalanche capability (E_AS = 26.5 mJ) and tight V_GS(TH) distribution (1.0–3.0 V). Its U-DFN2020-6 (Type F) package features exposed drain pad and NiPdAu-plated terminals for low-inductance PCB mounting and enhanced thermal transfer.

The device operates across –55°C to +150°C junction temperature range, supports ±20 V gate drive, and delivers stable on-resistance up to 150°C (normalized R_DS(ON) ≤ 1.8× at T_J = 150°C). Dynamic parameters-including C_iss = 1179 pF, Q_G = 17.1 nC @ 10 V-are characterized at V_DS = 20 V and ID = 10 A per JEDEC standards.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in off-state; suitable for 24 V input DC-DC stages and automotive load switches.
R_DS(ON)	9.5 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 11.8 A, critical for thermally constrained 4 mm² footprint designs.
I_D (max)	11.8 A @ T_A = +25°C - Continuous current rating on FR-4 with 1-inch² copper; derates to 9.4 A at +70°C ambient.
Q_GD	3.4 nC - Low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency.
R_θJA	63 °C/W - Measured on 1-inch² copper pad; enables 2.0 W power dissipation without active cooling in space-constrained layouts.
t_F	6.4 ns - Fast fall time reduces switching transition losses in high-frequency (>1 MHz) buck regulators.
V_GS(TH)	1.0–3.0 V - Low and tightly distributed threshold ensures reliable turn-on with 3.3 V or 5 V logic-level gate drivers.

Pinout & Package

U-DFN2020-6 (Type F) is a 2.0 mm × 2.0 mm × 0.6 mm leadless surface-mount package with an exposed drain pad (Pin 1–3: Source; Pin 4: Gate; Pin 5–6: Drain). The package uses NiPdAu-plated copper leadframe and complies with IPC/JEDEC J-STD-020 Level 1 moisture sensitivity.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source	Common return path for channel current; electrically tied to exposed drain pad via internal substrate connection in bottom view.
4	Gate	Control terminal requiring <17.1 nC total charge for full enhancement; sensitive to ESD (±100 nA leakage max).
5, 6	Drain	Main high-side switching node; connected to large exposed copper pad for thermal and electrical conduction to PCB ground plane.

Key Features

Feature	Design Value
Low R_DS(ON) × Q_GD FOM	32.3 mΩ·nC - Optimized trade-off between conduction loss and switching loss in high-frequency power stages.
0.6 mm profile	Enables ultra-thin end equipment (e.g., slim LED TVs, portable medical monitors) where Z-height is constrained to <0.7 mm.
4 mm² PCB footprint	Reduces board area by >50% vs. SO-8 equivalents; compatible with fine-pitch 0.65 mm pitch routing.
Lead-free & halogen-free	Complies with RoHS 3 (2015/863/EU) and Diodes' "Green" definition (<900 ppm Br/Cl, <1000 ppm Sb).
Fast body diode recovery	t_RR = 19.8 ns, Q_RR = 8.8 nC - Minimizes reverse-recovery loss in synchronous rectification and half-bridge configurations.

Applications

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: High-efficiency 12 V to 3.3 V point-of-load converter in industrial PLC modules.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500 kHz with 10 A peak output current.

Use Value: 9.5 mΩ R_DS(ON) and 6.4 ns t_F reduce total power loss by 18% vs. comparable 12 mΩ MOSFETs at same frequency and load.

Use Scenario: PWM-controlled boost driver for edge-lit LCD panels in automotive infotainment displays.

IC Role / Device Role / Timing Role: High-side switch modulating 30 V LED string current with 100 kHz duty-cycle control.

Use Value: 40 V V_DSS and 13.3 A I_AS withstand transient overvoltage during hot-swap events and ensure robustness against inductive kickback.

USB-C Power Delivery

Smartphone Power Management

Use Scenario: Input protection switch in 20 V/5 A USB-C PD sink circuit.

IC Role / Device Role / Timing Role: Load switch enabling/disabling VBUS path with <1 ms response and minimal voltage drop.

Use Value: 1.7 V gate threshold allows direct control from 3.3 V microcontroller GPIO; 0.6 mm height fits under stacked battery assemblies.

Use Scenario: Battery discharge path switch in dual-cell smartphone power architecture.

IC Role / Device Role / Timing Role: Low-loss main power switch managing 4.2 V to 3.6 V system rail with 8.5 A continuous current.

Use Value: 15.5 mΩ R_DS(ON) @ 4.5 V gate drive ensures <0.5 V dropout at full load, preserving battery runtime and thermal margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3029LFG-7	R_DS(ON) = 2.9 mΩ @ 10 V but rated only for 30 V V_DSS; larger 2.5 mm × 2.5 mm footprint.	Better for <30 V, ultra-low-loss applications; unsuitable for 40 V bus transients or automotive 36 V loads.	Select when V_IN ≤ 28 V and R_DS(ON) priority outweighs size and voltage margin.
Si2302DDS-T1-GE3	30 V V_DSS, 45 mΩ R_DS(ON) @ 4.5 V, SOT-23 package; higher R_θJA = 200 °C/W.	Limited to low-current (<3 A), low-voltage (<24 V) applications; lacks avalanche rating and thermal headroom.	Choose only for cost-sensitive, non-automotive, sub-2 A signal-switching roles-not for power conversion.

Compared with DMT4008LFDF-13, DMN3029LFG-7 offers lower conduction loss but sacrifices 25% voltage margin and increases board area by 56%; Si2302DDS-T1-GE3 trades 4.7× higher R_DS(ON) and 3.2× worse thermal resistance for legacy SOT-23 compatibility-neither matches the 40 V/9.5 mΩ/0.6 mm triad of this device.

Availability

DMT4008LFDF-13 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting systems, and USB-C power delivery modules requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMT4008LFDF-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-density, high-efficiency power conversion in consumer, computing, and industrial applications where low R_DS(ON), small footprint, and thermal reliability are critical.

FAQ

What is the maximum safe operating junction temperature for DMT4008LFDF-13?

The absolute maximum junction temperature is +150°C, validated across all electrical parameters in the datasheet. Thermal design must ensure T_J remains ≤150°C under worst-case ambient, power dissipation, and PCB copper conditions-verified using R_θJA = 63 °C/W (1-inch² copper) or R_θJA = 155 °C/W (minimum pad layout).

Can DMT4008LFDF-13 be used with 3.3 V gate drive in logic-level applications?

Yes-its V_GS(TH) range of 1.0–3.0 V and R_DS(ON) = 15.5 mΩ @ V_GS = 4.5 V enable reliable enhancement with 3.3 V controllers. However, full 11.8 A rating requires ≥4.5 V gate drive; at 3.3 V, conduction loss rises significantly due to increased R_DS(ON).

Does DMT4008LFDF-13 have integrated ESD protection on the gate?

No-this MOSFET does not include on-die ESD protection structures. External gate protection (e.g., 10 Ω series resistor + 12 V TVS) is required per IEC 61000-4-2 Level 4 (8 kV contact) handling, especially given its ±100 nA IGSS limit and sensitivity to overvoltage beyond ±20 V V_GS.

Is the U-DFN2020-6 (Type F) package compatible with standard reflow profiles?

Yes-the package meets IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and is qualified for standard lead-free reflow (peak 260°C, 20–40 sec above 217°C). Its NiPdAu finish ensures solderability per MIL-STD-202 Method 208, and the 0.6 mm profile avoids tombstoning on fine-pitch pads.

DMT4008LFDF-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 11.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 10A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1179 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 800mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: U-DFN2020-6 (Type F)

DMT4008LFDF-13 FAQ

1.How can I place an order for DMT4008LFDF-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT4008LFDF-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT4008LFDF-13 reliable?

The price and inventory of DMT4008LFDF-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4008LFDF-13 is usually 5 days.

3.What payment methods are accepted for DMT4008LFDF-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4008LFDF-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT4008LFDF-13?

DMT4008LFDF-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT4008LFDF-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT4008LFDF-13?

For technical support, including DMT4008LFDF-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4008LFDF-13 requirements.

6.How does Aetrix verify that DMT4008LFDF-13 is sourced from the original manufacturer or authorized distributors?

All DMT4008LFDF-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4008LFDF-13 meets industry standards.

7.What is the process for return or replacement of DMT4008LFDF-13?

All DMT4008LFDF-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4008LFDF-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT4008LFDF-13 part is unused and in its original packaging.

Return procedure for DMT4008LFDF-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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