Diodes Incorporated DMT4008LFDF-7
- Part No.:
- DMT4008LFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT4008LFDF-7.pdf
- Description:
- MOSFET BVDSS: 31V~40V U-DFN2020-
- Quantity:
- Payment:

- Shipping:

Inventory:3,090
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Product details
Overview
DMT4008LFDF-7 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for high-efficiency power switching with RDS(ON) = 9.5 mΩ @ VGS = 10V, ID = 11.8 A, and fast switching (tF = 6.4 ns). It serves as a primary synchronous rectifier or high-side switch in compact DC-DC converters.
For engineers reviewing the DMT4008LFDF-7 datasheet, DMT4008LFDF-7 pinout, DMT4008LFDF-7 application, or DMT4008LFDF-7 equivalent, key selection criteria include low-profile thermal performance (0.6 mm height), gate threshold voltage (1.0–3.0 V), Qgd × RDS(ON) figure-of-merit, and compatibility with 4.5 V logic-level drive in space-constrained power stages.
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve low RDS(ON) while maintaining controlled gate charge (QG = 17.1 nC @ 10 V) and minimized reverse transfer capacitance (Crss = 42 pF). Its design targets high-frequency operation in buck converters where conduction and switching losses must both be minimized.
The device integrates a body diode with VSD = 0.7–1.0 V at IS = 10 A and exhibits avalanche energy rating EAS = 26.5 mJ (L = 0.3 mH), supporting robust transient handling in unregulated input conditions without external snubbing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12 V/24 V input rail applications |
| RDS(ON) | 9.5 mΩ @ VGS = 10 V - Enables ≤1.2 W conduction loss at 11.8 A continuous current |
| ID (TA = 25°C) | 11.8 A - Sustained current capability on standard FR-4 with 1-inch copper pad |
| QGD | 3.4 nC - Low gate-drain charge minimizes Miller-induced switching delay and shoot-through risk |
| RθJA | 63 °C/W - Thermal resistance enables 2.0 W power dissipation with adequate PCB copper area |
| tF | 6.4 ns - Fast fall time supports >1 MHz switching in point-of-load regulators |
| VGS(TH) | 1.0–3.0 V - Compatible with 3.3 V and 5 V microcontroller GPIO drive without level-shifting |
Pinout & Package
U-DFN2020-6 (Type F) surface-mount package: 2.0 mm × 2.0 mm footprint, 0.6 mm profile, NiPdAu-plated copper leadframe, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Primary current return path; thermally connected to exposed die paddle for enhanced heat transfer |
| Pin 2 (Gate) | Control input (G) | Low-threshold input requiring minimal drive strength; sensitive to ESD (±20 V rating) |
| Pin 3 (Drain) | Power output (D) | Main high-side or low-side switching node; electrically isolated from paddle but thermally coupled |
| Pin 4 (Source) | Source terminal (S) | Second source connection for improved current sharing and reduced parasitic inductance |
| Pin 5 (Drain) | Power output (D) | Secondary drain connection to reduce current density and enhance SOA margin |
| Pin 6 (Drain) | Power output (D) | Third drain connection enabling symmetric layout and lower effective RDS(ON) in parallel routing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V drive | 15.5 mΩ - Enables efficient operation directly from 5 V logic or USB-PD controllers |
| Qgd × RDS(ON) FoM | ≈64 mΩ·nC - Optimized trade-off between switching speed and gate drive loss in high-frequency SMPS |
| 0.6 mm profile | Enables stacking under connectors or beneath thin shields in ultra-low-height modules |
| 4 mm² PCB footprint | Reduces board area by >50% vs. SO-8 equivalents while maintaining thermal performance |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A Class 3 environmental compliance |
Applications
| DC-DC Buck Converter | LCD Backlight Driver |
|---|---|
|
Use Scenario: Step-down regulation from 12 V to 5 V/3.3 V in portable industrial HMIs. IC Role / Device Role / Timing Role: High-side synchronous rectifier in fixed-frequency 500 kHz buck stage. Use Value: 9.5 mΩ RDS(ON) reduces conduction loss by 38% vs. comparable 12 mΩ MOSFETs, improving full-load efficiency from 92% to 94.1%. |
Use Scenario: LED string current control in automotive instrument cluster backlighting. IC Role / Device Role / Timing Role: PWM-controlled low-side switch modulating 350 mA per channel at 20 kHz. Use Value: Fast tF = 6.4 ns ensures clean PWM edges with <2% duty-cycle distortion, eliminating visible flicker. |
| USB-C Power Delivery Module | Smartphone PMIC Load Switch |
|
Use Scenario: Input protection and OR-ing in dual-source 20 V PD 3.0 power path. IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protected high-side switch with integrated body diode. Use Value: VGS(TH) = 1.7 V typical allows direct control from PD controller GPIO, eliminating external level shifters. |
Use Scenario: Per-rail load switching in multi-domain smartphone application processors. IC Role / Device Role / Timing Role: Always-on domain power gate with <1 µA leakage (IDSS ≤ 1 µA). Use Value: 0.6 mm height enables placement under stacked memory packages, preserving Z-height budget in <7 mm chassis. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT4008LK3-7 | Same die, but in U-DFN2020-6 (Type K3) package with different thermal pad geometry and solder mask defined pads | Requires revised stencil and reflow profile due to altered thermal land pattern | Select when legacy board design uses Type K3 footprint or requires alternate JEDEC-compliant variant |
| DMN3022LFG-7 | 30 V rating, 2.2 mΩ @ 10 V, higher ID (17 A), larger 2.5 mm × 2.5 mm package | Better for 5–12 V rails; unsuitable for 24 V input due to lower BVDSS margin | Choose for higher-current, lower-voltage applications where board area and height constraints are relaxed |
Compared with DMT4008LFDF-7, DMT4008LK3-7 offers identical electrical performance but demands layout revision, while DMN3022LFG-7 trades voltage headroom for lower RDS(ON) and higher current-making it optimal only below 15 V input.
Availability
DMT4008LFDF-7 is available at Aetrix Electronics and suitable for DC-DC converters, LCD backlight drivers, and USB-C power delivery modules requiring stable component supply, RoHS-compliant sourcing, and consistent U-DFN2020-6 packaging.
Supply support for DMT4008LFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency, space-constrained power conversion in consumer, computing, and industrial end-equipment.
FAQ
What is the maximum junction temperature and thermal derating behavior of DMT4008LFDF-7?
The device operates from –55 °C to +150 °C junction temperature. RDS(ON) increases by ~1.6× from 25 °C to 150 °C at VGS = 10 V (Fig. 6), and transient thermal resistance drops from 154 °C/W (single pulse) to 63 °C/W (steady-state with 1-inch copper), requiring careful layout for sustained >1.5 A loads.
Does DMT4008LFDF-7 support logic-level gate drive at 3.3 V?
Yes: VGS(TH) is specified 1.0–3.0 V, and RDS(ON) = 15.5 mΩ @ VGS = 4.5 V, 8.5 A. At 3.3 V, typical RDS(ON) rises to ~22 mΩ (inferred from Fig. 4), supporting moderate-current (<5 A) switching with acceptable loss in battery-powered systems.
How is the U-DFN2020-6 (Type F) package thermally managed during PCB layout?
The exposed die paddle (pins 1, 4, and thermal pad) must be soldered to a minimum 1-inch² copper pour on the top layer, connected via ≥4 thermal vias (0.3 mm diameter) to inner ground planes. Pad layout follows Diodes' recommended dimensions (X1 = 0.48 mm, Y1 = 0.80 mm) to ensure void-free reflow and mechanical reliability.
Is DMT4008LFDF-7 qualified for automotive applications?
No: The datasheet explicitly states automotive qualification (AEC-Q101) requires special change control and IATF 16949 manufacturing-this part is not pre-qualified. Customers needing automotive-grade versions must contact Diodes' sales team for PPAP-capable variants such as DMT4008LFDFQ-7.
DMT4008LFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1179 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 800mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT4008LFDF-7 FAQ
1.How can I place an order for DMT4008LFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT4008LFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT4008LFDF-7 reliable?
The price and inventory of DMT4008LFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4008LFDF-7 is usually 5 days.
3.What payment methods are accepted for DMT4008LFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4008LFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT4008LFDF-7?
DMT4008LFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT4008LFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT4008LFDF-7?
For technical support, including DMT4008LFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4008LFDF-7 requirements.
6.How does Aetrix verify that DMT4008LFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMT4008LFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4008LFDF-7 meets industry standards.
7.What is the process for return or replacement of DMT4008LFDF-7?
All DMT4008LFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4008LFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT4008LFDF-7 part is unused and in its original packaging.
Return procedure for DMT4008LFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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