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Diodes Incorporated DMT4008LFV-13
- Part No.:
- DMT4008LFV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT4008LFV-13.pdf
- Description:
- MOSFET N-CH 40V PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:6,243
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Product details
Overview
DMT4008LFV-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, delivering 7.9mΩ RDS(ON) at VGS = 10V and 54.8A continuous drain current at TC = +25°C. It features low input capacitance (1179pF), fast switching (tD(ON) = 3.5ns), and 100% unclamped inductive switching capability-optimized for high-efficiency DC-DC converters in server power supplies.
For engineers reviewing the DMT4008LFV-13 datasheet, DMT4008LFV-13 pinout, DMT4008LFV-13 application, or DMT4008LFV-13 equivalent, key selection criteria include RDS(ON) at 4.5V (12mΩ), thermal resistance RθJC (3.5°C/W), avalanche energy rating (19.2mJ), and PowerDI3333-8 footprint compatibility with high-current PCB layouts.
Technical Context
This MOSFET employs trench-gate silicon technology to simultaneously minimize conduction loss and gate charge (Qg = 17.1nC at VGS = 10V), enabling high-frequency synchronous buck operation up to 1MHz. Its body diode exhibits tRR = 19.8ns and QRR = 8.8nC, supporting efficient reverse recovery in hard-switched topologies.
The device is characterized for operation across –55°C to +150°C junction temperature, with RDS(ON) normalized to 1.2× at 150°C (VGS = 10V). Thermal design leverages the exposed drain pad for low RθJC = 3.5°C/W, requiring direct thermal connection to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage for 12V/24V input DC-DC stages without derating |
| RDS(ON) @ 10V | 7.9mΩ - Enables ≤1.2W conduction loss at 40A in high-current POL converters |
| RDS(ON) @ 4.5V | 12mΩ - Supports 3.3V/5V gate drive in controller-based designs with minimal on-loss penalty |
| Qg @ 10V | 17.1nC - Limits gate drive power to <15mW at 1MHz switching in 12V gate-drive systems |
| EAS | 19.2mJ - Withstands single-pulse inductive energy up to 0.3mH × (11.3A)²/2 in motor drive snubbers |
| RθJC | 3.5°C/W - Allows 35.7W power dissipation with <1°C/W heatsink interface in compact power modules |
| tRR | 19.8ns - Reduces body-diode switching loss by >40% vs. legacy SO-8 MOSFETs in synchronous rectification |
Pinout & Package
Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad (pins 1–4 and 7–8 are source; pin 5 is gate; pins 6 and the bottom pad are drain).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source node tied to PCB ground plane; six parallel terminals reduce source inductance for high di/dt stability |
| 5 | Gate (G) | Single low-inductance gate input; optimized for 1.7Ω gate resistance to balance EMI and switching speed |
| 6 + Exposed Pad | Drain (D) | Main power output path; exposed copper pad provides primary thermal path to PCB and supports >30A current routing |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) | Validated to 11.3A avalanche current and 19.2mJ energy-eliminates need for external clamping in boost converter switches |
| Low RDS(ON) at 4.5V | 12mΩ enables use with 5V microcontroller GPIO or low-voltage PWM controllers without level-shifting |
| Reduced Ciss/Coss ratio | 1179pF/384pF ratio improves Miller immunity and reduces gate oscillation risk in high-dV/dt environments |
| Green packaging | Halogen- and antimony-free molding compound (<900ppm Br+Cl, <1000ppm Sb) meets IPC-1752a Tier 2 reporting requirements |
Applications
| Server VRM Output Stage | Industrial 24V DC-DC Converter |
|---|---|
|
Use Scenario: High-current point-of-load regulation in dual-phase 48V-to-12V server VRMs delivering up to 120A per phase. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 500kHz with 40A peak current and <10ns dead-time control. Use Value: 7.9mΩ RDS(ON) cuts conduction loss by 35% versus comparable SO-8 MOSFETs, reducing thermal load on 2oz copper PCBs. |
Use Scenario: Primary-side high-side switch in isolated 24V input flyback converters for PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch handling 30A pulsed drain current with 10μs pulse width and 1% duty cycle. Use Value: 19.2mJ EAS rating allows reliable operation without snubber networks under transformer leakage inductance stress. |
| Automotive ADAS Camera Power | Telecom 48V Intermediate Bus |
|
Use Scenario: Input protection and hot-swap control for 12V camera modules in automotive ADAS systems with ISO 7637-2 pulse 5a compliance. IC Role / Device Role / Timing Role: Load switch managing inrush current during cold-cranking (–40°C to +105°C ambient). Use Value: RDS(ON) variation <1.2× from –40°C to +125°C ensures stable current limiting across full automotive temperature range. |
Use Scenario: Secondary-side synchronous rectifier in 48V-to-12V telecom intermediate bus converters operating at 300kHz. IC Role / Device Role / Timing Role: Low-side switch with body diode conducting during high-side dead time in center-tapped topology. Use Value: 19.8ns tRR and 8.8nC QRR reduce reverse recovery loss by >50% versus standard FRFETs, improving efficiency at light loads. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT4008LPS-13 | Same die in PowerDI5060 package; RDS(ON) identical but RθJC = 2.5°C/W due to larger exposed pad | Better thermal performance in space-constrained 1U server modules where board area permits larger footprint | Select when junction temperature must stay <110°C under 45A continuous load without forced air |
| SiR872DP-T1-GE3 | 40V, 6.8mΩ @ 10V, but Qg = 24.5nC and Ciss = 1520pF; TO-252 package with RθJC = 4.0°C/W | Higher gate charge increases driver loss at >300kHz; TO-252 limits current density vs. PowerDI3333-8's 6-source-pin layout | Prefer only if existing TO-252 footprint reuse is mandatory and switching frequency remains <200kHz |
Compared with DMT4008LFV-13, DMT4008LPS-13 offers superior thermal management in dense layouts, while SiR872DP-T1-GE3 trades higher switching loss for legacy package compatibility-neither matches the combined low RDS(ON), low Qg, and ultra-low source inductance of the PowerDI3333-8 variant.
Availability
DMT4008LFV-13 is available at Aetrix Electronics and suitable for server VRM output stages, industrial 24V DC-DC converters, and automotive ADAS camera power systems requiring stable component supply, long-term lifecycle support, and traceable green-material compliance.
Supply support for DMT4008LFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMT4008LFV belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, industrial, and automotive power systems where thermal density and switching fidelity are critical.
FAQ
What is the maximum continuous drain current for DMT4008LFV-13 at 70°C case temperature?
The datasheet specifies 43.9A continuous drain current at TC = +70°C with VGS = 10V. This rating assumes proper thermal coupling to a 2oz copper heatsink area and accounts for RDS(ON) increase with junction temperature. Derating below 43.9A is required if PCB copper area or airflow is reduced.
Does DMT4008LFV-13 support logic-level gate drive?
Yes-it delivers 12mΩ RDS(ON) at VGS = 4.5V, making it compatible with 5V logic outputs and many integrated gate drivers without level-shifting. Gate threshold voltage is specified between 1V and 3V, ensuring reliable turn-on with margin above typical 3.3V controller outputs.
How is the exposed drain pad on the PowerDI3333-8 package electrically connected?
The exposed drain pad (underside of the package) is internally connected to pins 6 and functions as the primary drain terminal. It must be soldered to a large PCB copper pour tied to the high-side DC bus node. No isolation or thermal vias are required unless ambient temperature exceeds 85°C.
Is DMT4008LFV-13 qualified for automotive applications?
No-DMT4008LFV-13 is not AEC-Q101 qualified. While it operates from –55°C to +150°C and meets RoHS/Green standards, Diodes Incorporated does not certify this part for automotive use. For automotive-grade equivalents, consider the DMT4008LFVQ series, which undergoes full AEC-Q101 stress testing.
DMT4008LFV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.1A (Ta), 54.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.9mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1179 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta), 35.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UX)
DMT4008LFV-13 FAQ
1.How can I place an order for DMT4008LFV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT4008LFV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT4008LFV-13 reliable?
The price and inventory of DMT4008LFV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4008LFV-13 is usually 5 days.
3.What payment methods are accepted for DMT4008LFV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4008LFV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT4008LFV-13?
DMT4008LFV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT4008LFV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT4008LFV-13?
For technical support, including DMT4008LFV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4008LFV-13 requirements.
6.How does Aetrix verify that DMT4008LFV-13 is sourced from the original manufacturer or authorized distributors?
All DMT4008LFV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4008LFV-13 meets industry standards.
7.What is the process for return or replacement of DMT4008LFV-13?
All DMT4008LFV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4008LFV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT4008LFV-13 part is unused and in its original packaging.
Return procedure for DMT4008LFV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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