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Diodes Incorporated DMT4008LFV-7
- Part No.:
- DMT4008LFV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT4008LFV-7.pdf
- Description:
- MOSFET N-CH 40V PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:7,241
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Product details
Overview
DMT4008LFV-7 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, delivering 7.9mΩ RDS(ON) at VGS = 10V and 54.8A continuous drain current at TC = +25°C. It features low input capacitance (1179pF), fast switching (tD(ON) = 3.5ns), and 100% unclamped inductive switching capability-optimized for high-efficiency DC-DC converters in server power supplies and POL modules.
For engineers reviewing the DMT4008LFV-7 datasheet, DMT4008LFV-7 pinout, DMT4008LFV-7 application, or DMT4008LFV-7 equivalent, key selection criteria include RDS(ON) @ 4.5V (12mΩ), thermal resistance RθJC (3.5°C/W), avalanche energy rating (19.2mJ), and PowerDI3333-8 thermal pad layout compatibility with high-current PCB designs.
Technical Context
This MOSFET uses trench-gate silicon process to achieve low on-resistance while maintaining controlled gate charge (Qg = 17.1nC @ 10V) and minimized reverse transfer capacitance (Crss = 42pF). Its body diode exhibits tRR = 19.8ns and QRR = 8.8nC under 400A/μs di/dt, supporting synchronous rectification in buck converters.
The device operates across –55°C to +150°C junction temperature range and supports robust avalanche operation (IAS = 11.3A, EAS = 19.2mJ with L = 0.3mH), enabling reliable performance in transient-heavy industrial power rails without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage before avalanche; sets upper limit for input voltage in 12V/24V/36V DC-DC stages. |
| RDS(ON) @ 10V | 7.9mΩ - Enables <1.2W conduction loss at 12A, critical for thermally constrained POL applications. |
| RDS(ON) @ 4.5V | 12mΩ - Ensures usable on-state performance with 5V gate drive, supporting logic-level control in battery-powered systems. |
| Qg @ 10V | 17.1nC - Determines gate driver power requirement and switching loss; enables <100kHz–1MHz operation with standard 1A drivers. |
| RθJC | 3.5°C/W - Allows 35.7W power dissipation at TC = +25°C; requires direct thermal pad connection to PCB copper for heatsinking. |
| tRR | 19.8ns - Minimizes body diode reverse recovery loss during hard-switching transitions in synchronous buck topologies. |
Pinout & Package
Package: PowerDI3333-8 (Type UX), surface-mount with exposed drain pad for thermal and electrical connection. Molded green compound, UL 94V-0 rated, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (all Drain) | Drain (D) | Eight parallel drain terminals connected to internal die and exposed bottom pad-provides low-inductance, high-current path and primary thermal interface. |
| Pin 1 (marked) | Source (S) | Leftmost source terminal in top view; used for Kelvin sensing or low-side current monitoring when isolated from bulk source routing. |
| Pins 2–3 | Source (S) | Additional source connections reducing source inductance in high-di/dt switching; improves gate drive stability. |
| Pins 7–8 | Gate (G) | Dual gate terminals minimize gate loop inductance; required for stable 10V drive at >1MHz with <3.5ns turn-on delay. |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) | Validated to 11.3A/19.2mJ (L = 0.3mH); eliminates need for external clamping circuits in motor drive H-bridge freewheeling paths. |
| Low Input Capacitance (Ciss) | 1179pF @ VDS = 20V - Reduces gate driver power consumption and improves efficiency in high-frequency (>500kHz) SMPS designs. |
| Thermally Optimized PowerDI3333-8 | RθJC = 3.5°C/W - Enables 35.7W continuous dissipation with minimal thermal interface resistance when soldered to 1-in² 2oz copper. |
| Lead-Free & Halogen-Free Construction | RoHS 3 compliant (<900ppm Br+Cl, <1000ppm Sb); meets automotive and industrial environmental requirements without compromising thermal or electrical performance. |
Applications
| Server Point-of-Load Converter | Industrial Motor Drive Half-Bridge |
|---|---|
|
Use Scenario: High-current, low-voltage output stage in 48V-to-12V/5V server VRMs handling up to 50A peak load. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 600kHz with 4.5V gate drive from controller IC. Use Value: 12mΩ RDS(ON) @ 4.5V reduces conduction loss by 32% vs. comparable 15mΩ MOSFETs, improving full-load efficiency by ≥0.8%. |
Use Scenario: Upper and lower switches in 24V BLDC motor half-bridge driving 15A continuous phase current. IC Role / Device Role / Timing Role: N-channel high-side and low-side power switch with integrated body diode conducting freewheeling current during dead-time. Use Value: 19.8ns tRR and 8.8nC QRR minimize shoot-through risk and reduce diode conduction loss by 40% versus legacy 30ns devices. |
| Telecom DC-DC Module | Battery-Powered Portable Equipment |
|
Use Scenario: Primary switch in isolated 48V-input telecom brick supplying 3.3V/20A to baseband processing units. IC Role / Device Role / Timing Role: Primary-side MOSFET in active-clamp forward topology switching at 300kHz with 10V gate drive. Use Value: 7.9mΩ RDS(ON) @ 10V limits conduction loss to <1.0W at 20A, enabling compact heatsinkless design in 1U chassis. |
Use Scenario: Load switch and battery protection FET in portable medical monitor with Li-ion input (3.0–4.2V). IC Role / Device Role / Timing Role: Reverse-polarity and overcurrent protection switch placed between battery and system rail. Use Value: 100% UIS rating ensures survival during accidental short-circuit events without latch-up or parametric shift, extending field reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT4008LK3-13 | Same die, identical RDS(ON), Qg, and SOA-but in PowerDI5060-8 (Type KX) package with larger thermal pad (RθJC = 2.8°C/W). | Better thermal performance in high-power (>40W) applications; requires revised PCB footprint and stencil design. | Select when junction temperature must stay below 125°C under sustained 45A load; not drop-in compatible due to different outline. |
| IPB180N04S4-02 | 40V, 1.8mΩ @ 10V, 180A ID, TO-263-7 package; higher current rating but 3× higher Qg (52nC) and Ciss (3900pF). | Optimized for lower-frequency (≤200kHz), high-current inverters-not suitable for >300kHz DC-DC where switching loss dominates. | Choose only if conduction loss reduction outweighs gate drive complexity and EMI concerns in fixed-frequency industrial SMPS. |
Compared with DMT4008LFV-7, DMT4008LK3-13 offers superior thermal management at the cost of board redesign, while IPB180N04S4-02 trades switching efficiency for raw current capacity-making DMT4008LFV-7 optimal for space-constrained, high-frequency POL and telecom modules.
Availability
DMT4008LFV-7 is available at Aetrix Electronics and suitable for server point-of-load converters, industrial motor drives, telecom DC-DC modules, and battery-powered portable equipment requiring stable component supply and consistent parametric performance across production lots.
Supply support for DMT4008LFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.
The Power MOSFET product line-including the DMT4008LFV-7-is engineered specifically for high-efficiency, high-reliability power conversion in computing, telecom, and industrial systems, emphasizing low RDS(ON), fast switching, and rugged avalanche capability.
FAQ
What is the maximum safe operating temperature for DMT4008LFV-7?
The absolute maximum junction temperature is +150°C, and the device is rated for continuous operation across –55°C to +150°C. Thermal design must ensure TJ ≤ 150°C under worst-case ambient and power dissipation conditions, using RθJC = 3.5°C/W and verified PCB copper area per Diodes' suggested pad layout.
Does DMT4008LFV-7 support 5V gate drive in practical applications?
Yes-its RDS(ON) is specified at 12mΩ @ VGS = 4.5V and 10A, and gate threshold voltage VGS(TH) ranges from 1V to 3V. With proper gate driver rise time and layout, it delivers stable on-state performance in 5V-controlled synchronous buck converters up to 1MHz.
How does the PowerDI3333-8 package improve thermal performance over SO-8?
The PowerDI3333-8 exposes the drain pad directly to the PCB, achieving RθJC = 3.5°C/W-over 4× better than typical SO-8 (≈15°C/W). This allows 35.7W power dissipation at TC = +25°C, enabling higher current density without external heatsinks in space-limited applications.
Is DMT4008LFV-7 suitable for automotive applications?
While AEC-Q101 qualified versions exist in the same family (e.g., DMT4008LFVQ), the standard DMT4008LFV-7 is not automotive-qualified. It meets industrial temperature and reliability requirements but lacks PPAP documentation, stress test reports, and zero-defect screening required for automotive ECUs or ADAS power stages.
DMT4008LFV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.1A (Ta), 54.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.9mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1179 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.9W (Ta), 35.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UX)
DMT4008LFV-7 FAQ
1.How can I place an order for DMT4008LFV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT4008LFV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT4008LFV-7 reliable?
The price and inventory of DMT4008LFV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4008LFV-7 is usually 5 days.
3.What payment methods are accepted for DMT4008LFV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4008LFV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT4008LFV-7?
DMT4008LFV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT4008LFV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT4008LFV-7?
For technical support, including DMT4008LFV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4008LFV-7 requirements.
6.How does Aetrix verify that DMT4008LFV-7 is sourced from the original manufacturer or authorized distributors?
All DMT4008LFV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4008LFV-7 meets industry standards.
7.What is the process for return or replacement of DMT4008LFV-7?
All DMT4008LFV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4008LFV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT4008LFV-7 part is unused and in its original packaging.
Return procedure for DMT4008LFV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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