Diodes Incorporated DMT4008LSS-13

Overview

DMT4008LSS-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in SO-8 package, delivering 8.5mΩ R_DS(ON) at V_GS = 10V and 12.8A continuous drain current at T_A = +25°C. It serves as a high-efficiency power switch in synchronous rectification stages and DC-DC converter low-side switches, enabling reduced conduction loss and thermal stress in compact 12V/24V industrial power rails.

For engineers reviewing the DMT4008LSS-13 datasheet, DMT4008LSS-13 pinout, DMT4008LSS-13 application, or DMT4008LSS-13 equivalent, key selection criteria include verified R_DS(ON) at 4.5V (12.5mΩ), SO-8 thermal performance (R_θJA = 59.2°C/W with 2oz copper), avalanche energy rating (E_AS = 27.3mJ), and gate charge profile (Q_G = 18.6nC @ 10V) for PWM-driven switching designs.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low R_DS(ON) while maintaining fast switching (t_r = 5.9ns, t_f = 10.9ns) and low input capacitance (C_iss = 1143pF). Its gate threshold voltage (V_GS(TH) = 1.56V typ) ensures reliable turn-on with standard 3.3V/5V logic-level drivers.

The device integrates a robust body diode with reverse recovery charge Q_RR = 13.0nC and t_RR = 14.5ns, supporting high-frequency synchronous rectification without external Schottky diodes. Thermal design is enabled by R_θJC = 7.6°C/W and JEDEC-compliant SO-8 footprint.

Key Specifications

Pinout & Package

Package: SO-8 (Surface-mount, 8-pin, 4.9mm × 6.0mm footprint per JEDEC MS-012, 7.6°C/W junction-to-case thermal resistance).

Correction applied per datasheet pin-out diagram: Pin 1 = Drain, Pins 2–4 = Source, Pin 5 = Gate, Pins 6–8 = Drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMT4008LSS-13, DMN4016LSD-13 trades lower cost for higher R_DS(ON), while SI2308DS-T1-GE3 sacrifices voltage rating for smaller gate charge - neither matches its combination of 40V rating, sub-13mΩ 4.5V on-resistance, and SO-8 thermal performance.

Availability

DMT4008LSS-13 is available at Aetrix Electronics and suitable for DC-DC converters, synchronous rectifiers, and motor driver H-bridges requiring stable component supply across industrial, telecom, and embedded power designs.

Supply support for DMT4008LSS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMT4008LSS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-current switching in space-constrained power conversion systems where low R_DS(ON) and fast switching are critical.

FAQ

What is the maximum safe operating junction temperature for DMT4008LSS-13?

The absolute maximum junction temperature is +150°C per datasheet Section "Maximum Ratings." Operation above +125°C requires derating of continuous drain current and must account for R_DS(ON) increase (1.8× at 150°C vs. 25°C), verified using Figure 6 and Figure 7. Thermal design must ensure T_J remains below 150°C under worst-case ambient and power dissipation.

Can DMT4008LSS-13 be driven directly by a 3.3V microcontroller GPIO?

Yes - its gate threshold voltage V_GS(TH) is specified 1.0–3.0V (typ 1.56V), and R_DS(ON) is guaranteed 12.5mΩ at V_GS = 4.5V. At 3.3V, it achieves partial enhancement (see Figure 2 & Figure 4), delivering ~7–8A continuous current with acceptable R_DS(ON) (~18–22mΩ), sufficient for many low-duty-cycle or medium-current applications.

Does DMT4008LSS-13 have integrated ESD protection on the gate?

No - the datasheet does not specify gate ESD rating (HBM or CDM). External gate protection (e.g., 10Ω series resistor + 12V Zener clamp to source) is recommended for handling-sensitive assembly or systems exposed to human contact, especially given its ±20V V_GSS rating and low gate oxide robustness typical of low-R_DS(ON) MOSFETs.

How does the SO-8 package's thermal performance compare between single-layer and 2oz copper PCB layouts?

With minimum FR-4 pad layout (Note 5), R_θJA = 94°C/W limits usable power to ~1.32W. With 2oz copper and thermal bias to 1-inch square copper plate (Note 6), R_θJA improves to 59.2°C/W, enabling 2.09W dissipation - a 58% thermal improvement critical for sustained 10A operation in enclosed industrial enclosures.