Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMT4011LFG-13

Part No.:
DMT4011LFG-13
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMT4011LFG-13.pdf
Description:
MOSFET N-CH 40V 30A POWERDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,957

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMT4011LFG-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 11.5mΩ RDS(ON) at VGS = 10V and 30A continuous drain current at TC = +25°C. It features low gate charge (Qg = 15.1nC), 100% production-tested UIS robustness, and optimized FOM (Qgd × RDS(ON)) for high-frequency DC-DC converter switching stages.

For engineers reviewing the DMT4011LFG-13 datasheet, DMT4011LFG-13 pinout, DMT4011LFG-13 application, or DMT4011LFG-13 equivalent, key selection criteria include RDS(ON) at 4.5V (17.8mΩ), thermal resistance RθJC = 8°C/W, avalanche energy EAS = 21.4mJ, and body diode reverse recovery charge QRR = 5.1nC in compact thermally efficient packaging.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low conduction loss while maintaining fast switching performance. Its 8°C/W junction-to-case thermal resistance enables high-power density operation when mounted on PCB copper pads, and its 100% UIS-tested construction ensures reliability under inductive load transients.

The device supports dual-gate-voltage drive (4.5V and 10V), with gate threshold voltage VGS(TH) tightly specified between 1V and 3V. Dynamic parameters-including Ciss = 767pF, Coss = 238pF, and Qgd = 3.2nC-support stable operation in synchronous buck converters operating up to 1MHz.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 40V - Maximum blocking voltage for 12V/24V input DC-DC stages without derating
RDS(ON) 11.5mΩ @ VGS = 10V - Enables ≤0.6W conduction loss at 20A in high-current power rails
ID (continuous) 30A @ TC = +25°C - Supports high-current POL applications with external heatsinking
Qg 15.1nC @ VGS = 10V - Reduces gate driver power demand and switching transition time
EAS 21.4mJ - Withstands repetitive inductive energy spikes in motor drivers and solenoid controls
RθJC 8°C/W - Allows direct thermal coupling to heatsink or copper plane for >10W dissipation
tRR 9.8ns - Minimizes body diode reverse recovery loss in synchronous rectification

Pinout & Package

Package: PowerDI3333-8 - Surface-mount, thermally enhanced 8-pin leadless package with exposed drain paddle; 3.3mm × 3.3mm footprint, 0.8mm height, RoHS-compliant matte tin finish over copper leadframe.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4 Source (S) Four parallel source terminals reduce source inductance and improve current sharing in high-di/dt switching
5, 6, 7, 8 Drain (D) Four-drain configuration connects to internal die paddle; primary thermal path to PCB copper
Top center pad Gate (G) Single gate terminal located centrally for symmetric drive routing and minimized loop inductance

Key Features

Feature Design Value
100% UIS tested Guarantees avalanche ruggedness across full production lot-no screening failure risk in inductive loads
Low Qgd × RDS(ON) FOM 36.8 mΩ·nC - Optimized for high-efficiency, high-frequency DC-DC conversion with minimal switching loss
Thermally efficient PowerDI3333-8 8°C/W RθJC enables 15.6W power dissipation at TC = +25°C without external heatsink
Green, halogen-free construction <900ppm Br, <900ppm Cl, <1000ppm Sb - Complies with IPC-1752A Class 3 environmental reporting requirements

Applications

LED Backlighting Point-of-Load Converter

Use Scenario: Driving high-brightness LED strings in automotive instrument clusters and infotainment displays.

IC Role / Device Role / Timing Role: High-side switch controlling LED current in constant-current boost topology.

Use Value: Low RDS(ON) minimizes power loss in space-constrained modules; 100% UIS rating prevents failure during LED open-circuit transients.

Use Scenario: Main synchronous rectifier in 5V/3.3V/1.2V step-down converters for FPGA, ASIC, and microcontroller power rails.

IC Role / Device Role / Timing Role: Low-side power switch in synchronous buck stage operating at 500kHz–1MHz.

Use Value: 17.8mΩ RDS(ON) at 4.5V enables direct logic-level drive from controller; fast tF = 2ns reduces dead-time loss.

USB-C Power Delivery Industrial Motor Control

Use Scenario: Load switch in USB-C PD sink applications requiring 20V input handling and fast enable/disable response.

IC Role / Device Role / Timing Role: Input protection and hot-swap control switch upstream of buck controller.

Use Value: VDSS = 40V provides 2× margin over 20V PD max; low Qg ensures <1μs turn-on for dynamic load insertion.

Use Scenario: Half-bridge low-side switch in 24V BLDC motor gate drivers for HVAC actuators and industrial pumps.

IC Role / Device Role / Timing Role: Fast-switching power stage element in three-phase inverter leg.

Use Value: EAS = 21.4mJ withstands commutation spikes; tRR = 9.8ns suppresses shoot-through risk during PWM transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT6004LPS-13 60V VDSS, 4.5mΩ @ 10V, PowerDI5060 package (larger footprint, lower RθJA) Better voltage margin but higher gate charge (22nC) and larger board area Select when system requires >40V transient tolerance and can accommodate 5.0mm × 6.0mm layout
SiR872DP-T1-GE3 40V VDSS, 10.5mΩ @ 10V, PowerPAK SO-8L package, Qg = 16.5nC Similar RDS(ON) but higher RθJC (12°C/W) and no production UIS test data published Prefer when existing SO-8L footprint reuse is required and avalanche stress is not expected

Compared with DMT6004LPS-13 and SiR872DP-T1-GE3, DMT4011LFG-13 delivers superior thermal efficiency (RθJC = 8°C/W), verified UIS robustness, and smaller 3.3mm × 3.3mm footprint-making it optimal for space- and thermally constrained high-reliability DC-DC designs.

Availability

DMT4011LFG-13 is available at Aetrix Electronics and suitable for LED backlighting, point-of-load converters, and USB-C power delivery systems requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for DMT4011LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This device belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion in consumer, industrial, and automotive applications where thermal performance and switching reliability are critical.

FAQ

What is the maximum safe operating temperature for DMT4011LFG-13?

The device has a rated junction temperature range of –55°C to +150°C. Under continuous operation, maximum case temperature must be limited to +70°C to sustain 24A ID, per datasheet derating curves. Thermal design must ensure RθJA remains ≤62°C/W on FR-4 with 1-inch² 2oz copper pad to avoid exceeding TJ(max).

Can DMT4011LFG-13 be driven directly by a 3.3V GPIO?

No-its gate threshold voltage VGS(TH) ranges from 1V to 3V, but RDS(ON) is only guaranteed at VGS ≥ 4.5V (17.8mΩ). At 3.3V, conduction loss increases significantly and is not characterized. A level-shifted or buffered 4.5V+ gate drive is required for reliable low-RDS(ON) operation.

Does DMT4011LFG-13 have integrated ESD protection?

The datasheet does not specify human-body model (HBM) or charged-device model (CDM) ESD ratings. While the PowerDI3333-8 package provides mechanical robustness, external TVS or RC filtering is recommended on gate and drain lines in environments with electrostatic discharge risk.

Is DMT4011LFG-13 qualified for automotive use?

Per the datasheet, this part is not AEC-Q101 qualified. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing-none of which apply to DMT4011LFG-13. It is intended for industrial and commercial applications only.

DMT4011LFG-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
11mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15.1 nC @ 10 V
Vgs (Max):
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:
767 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
15.6W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI3333-8

DMT4011LFG-13 FAQ

1.How can I place an order for DMT4011LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT4011LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT4011LFG-13 reliable?

The price and inventory of DMT4011LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4011LFG-13 is usually 5 days.

3.What payment methods are accepted for DMT4011LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4011LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT4011LFG-13?

DMT4011LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT4011LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT4011LFG-13?

For technical support, including DMT4011LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4011LFG-13 requirements.

6.How does Aetrix verify that DMT4011LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMT4011LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4011LFG-13 meets industry standards.

7.What is the process for return or replacement of DMT4011LFG-13?

All DMT4011LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4011LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT4011LFG-13 part is unused and in its original packaging.

Return procedure for DMT4011LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT4011LFG-13 Tags

  • DMT4011LFG-13
  • DMT4011LFG-13 PDF
  • DMT4011LFG-13 Datasheet
  • DMT4011LFG-13 Specifications
  • DMT4011LFG-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMT4011LFG-13
  • Buy DMT4011LFG-13
  • DMT4011LFG-13 Price
  • DMT4011LFG-13 Distributor
  • DMT4011LFG-13 Supplier
  • DMT4011LFG-13 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER