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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT4011LSS-13

Name: DMT4011LSS-13
Brand: Diodes Incorporated
SKU: DMT4011LSS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT4011LSS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMT4011LSS-13.pdf

Description:: MOSFET N-CH 40V 10.8A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMT4011LSS from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-efficiency power management with 11.5mΩ R_DS(ON) @ V_GS = 10V, 10.8A continuous drain current at 25°C, and fast switching (t_D(ON) = 4.4ns), deployed in synchronous rectification stages of DC-DC converters.

For engineers reviewing the DMT4011LSS datasheet, DMT4011LSS pinout, DMT4011LSS application, or DMT4011LSS equivalent, key selection criteria include on-resistance at 4.5V gate drive (17.6mΩ), thermal resistance (R_θJA = 61.7°C/W with 2oz copper), avalanche energy rating (19.8mJ), and SO-8 lead-free mechanical compliance per J-STD-020 Level 1.

Technical Context

This MOSFET employs planar trench-gate technology to achieve low R_DS(ON) while maintaining robust safe operating area (SOA) up to 10ms pulses at 10A/20V. Its gate threshold voltage (1.1–2.4V) enables compatibility with 3.3V and 5V logic-level drivers.

The device integrates a low-V_SD body diode (0.84V typ @ 20A) with 11.9ns reverse recovery time and 9.4nC Q_RR, supporting high-frequency synchronous rectification without external Schottky replacement in buck converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum blocking voltage for 12V/24V input rail applications
R_DS(ON) @ 10V	11.5mΩ - Enables <1.2W conduction loss at 10.8A in compact SO-8 layout
R_DS(ON) @ 4.5V	17.6mΩ - Supports direct drive from standard 5V PWM controllers
Q_G @ 10V	14.3nC - Low gate charge reduces driver power and switching losses at >500kHz
E_AS	19.8mJ - Withstands single-pulse inductive energy in hard-switched topologies
R_θJA (2oz Cu)	61.7°C/W - Allows 2.02W dissipation at +70°C ambient without heatsink
t_RR	11.9ns - Minimizes cross-conduction loss during dead-time in synchronous FETs

Pinout & Package

Package: SO-8 surface-mount, 4.90mm × 6.00mm footprint, matte tin annealed terminals, UL 94V-0 molded plastic housing, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source pins reduce bond-wire inductance and improve current sharing in high-di/dt paths
5, 6, 7, 8	Drain (D)	Four paralleled drain terminals connect directly to internal die metal, enabling low-inductance PCB layout for switching nodes
Gate (G)	Control input	Single gate pin (Pin 3 not used; actual Gate is Pin 1 per marking diagram) accepts 0–20V drive with 2.0Ω gate resistance

Key Features

Feature	Design Value
Low R_DS(ON) @ 4.5V	17.6mΩ enables efficient operation with 5V gate drivers in POL converters
Fast switching speed	4.4ns turn-on delay + 3.7ns rise time minimizes transition losses at 1MHz+ frequencies
Low Q_GD/Q_G ratio	3.0nC/14.3nC = 0.21 improves Miller immunity and reduces gate oscillation risk
Green compound packaging	Halogen- and antimony-free molding meets IPC-1752A Class 1 material declarations

Applications

DC-DC Buck Converters

Synchronous Rectifiers

Use Scenario: Primary-side high-side switch in 12V-to-3.3V/5V point-of-load converters delivering up to 15A.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET controlled by integrated PWM controller with bootstrap gate drive.

Use Value: 11.5mΩ R_DS(ON) limits conduction loss to ≤1.2W at full load, reducing thermal stress on 2-layer PCBs.

Use Scenario: Secondary-side synchronous rectifier in isolated 48V-to-12V telecom power supplies.

IC Role / Device Role / Timing Role: Low-side switching element replacing Schottky diode in forward or LLC resonant topologies.

Use Value: 0.84V V_SD and 11.9ns t_RR cut forward drop and recovery loss by >40% vs. 40V Schottky alternatives.

Power Supply OR-ing

Motor Drive Half-Bridges

Use Scenario: Redundant 24V input OR-ing circuit in industrial PLC power modules.

IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET providing bidirectional current blocking and low-loss conduction path.

Use Value: 40V V_DSS and 19.9A I_AS support hot-swap surge tolerance and fault current limiting without external TVS.

Use Scenario: Low-side switch in 24V BLDC motor gate driver IC reference designs.

IC Role / Device Role / Timing Role: PWM-controlled power stage switch interfacing with gate driver IC (e.g., DRV8305).

Use Value: 17.6mΩ R_DS(ON) @ 4.5V matches typical gate driver output voltage, eliminating level-shifting circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN4011LSD-13	Same R_DS(ON) specs but in leaded SO-8 package (not RoHS-compliant); higher R_θJA (95.4°C/W)	Not suitable for lead-free reflow; requires wave soldering or hand-soldering	Select only if legacy assembly process mandates leaded terminations
SI2301DS-T1-BE3	Lower voltage (20V), higher R_DS(ON) (100mΩ @ 4.5V), SOT-23 package	Limited to sub-2A loads; unsuitable for >10A DC-DC output stages	Only viable for low-current bias rails where SO-8 footprint is prohibitive

Compared with DMT4011LSS, DMN4011LSD-13 trades RoHS compliance for legacy manufacturability, while SI2301DS-T1-BE3 sacrifices voltage rating and current capacity for ultra-compact size-neither offers drop-in replacement capability in high-power synchronous rectifier roles.

Availability

DMT4011LSS is available at Aetrix Electronics and suitable for DC-DC converters, synchronous rectifiers, and industrial power supplies requiring stable component supply across extended temperature ranges (-55°C to +150°C).

Supply support for DMT4011LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

The DMT series targets high-efficiency power conversion, emphasizing low R_DS(ON), fast switching, and thermally robust SO-8 packaging for space-constrained industrial and computing power systems.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The DMT4011LSS supports 8.67A continuous drain current at T_A = +70°C when mounted on an FR-4 board with 2oz copper and thermal bias to a 1-inch square copper plate (Note 6). This derating reflects its 61.7°C/W thermal resistance under enhanced layout conditions.

Does this MOSFET require a gate resistor for stability?

Yes-a 5–10Ω external gate resistor is recommended to dampen ringing caused by the 2.0Ω intrinsic gate resistance interacting with PCB trace inductance and driver output impedance, especially in >1MHz switching applications where Crss = 24.6pF can induce Miller-induced shoot-through.

Can DMT4011LSS replace a Schottky diode in flyback secondary rectification?

Yes-it is qualified for synchronous rectification in flyback converters up to 100kHz, leveraging its 0.84V V_SD and 11.9ns t_RR. However, precise timing control via dedicated SR controller (e.g., AP33771) is required to avoid cross-conduction during gate transitions.

Is the SO-8 package thermally enhanced compared to standard SO-8?

No-it uses a standard SO-8 outline (JEDEC MS-012) without exposed pad or thermal tab. Thermal performance relies entirely on PCB copper area: R_θJA drops from 95.4°C/W (minimal pad) to 61.7°C/W only with 2oz copper and bottom-layer thermal plane per Note 6 layout guidelines.

DMT4011LSS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 10.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 829 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 1.31W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOP

DMT4011LSS-13 FAQ

1.How can I place an order for DMT4011LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT4011LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT4011LSS-13 reliable?

The price and inventory of DMT4011LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4011LSS-13 is usually 5 days.

3.What payment methods are accepted for DMT4011LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4011LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT4011LSS-13?

DMT4011LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT4011LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT4011LSS-13?

For technical support, including DMT4011LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4011LSS-13 requirements.

6.How does Aetrix verify that DMT4011LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMT4011LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4011LSS-13 meets industry standards.

7.What is the process for return or replacement of DMT4011LSS-13?

All DMT4011LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4011LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT4011LSS-13 part is unused and in its original packaging.

Return procedure for DMT4011LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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