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Diodes Incorporated DMT4014LDV-13
- Part No.:
- DMT4014LDV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT4014LDV-13.pdf
- Description:
- MOSFET 2N-CH 40V 8.5A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:3,207
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Product details
Overview
DMT4014LDV-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, delivering 19 mΩ RDS(ON) at VGS = 10 V and 26.5 A continuous drain current at TC = +25°C. It features low input capacitance (750 pF), fast switching (tD(ON) = 3.5 ns), and 100% production-tested UIS robustness - optimized for high-efficiency DC-DC converters and wireless charging power stages.
For engineers reviewing the DMT4014LDV-13 datasheet, DMT4014LDV-13 pinout, DMT4014LDV-13 application, or DMT4014LDV-13 equivalent, key selection criteria include RDS(ON) @ 4.5 V (29 mΩ), thermal resistance RθJC = 6.2 °C/W, body diode recovery charge QRR = 9.5 nC, and PowerDI3333-8 dual-drain/dual-gate layout compatibility with high-density PCB layouts.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low on-resistance while maintaining tight gate charge control: Qg = 11.2 nC at VGS = 10 V and Qgd = 2.2 nC enable precise PWM timing in synchronous buck topologies. Its dual-source/dual-drain configuration (S1/G1/D1 and S2/G2/D2) supports paralleled operation without external current-sharing components.
The device is characterized for operation across –55°C to +150°C junction temperature, with normalized RDS(ON) variation ≤1.8× over that range at VGS = 10 V. Body diode reverse recovery time tRR = 11.3 ns and low QRR reduce switching losses in hard-commutated freewheeling paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage before avalanche onset; sets upper limit for input voltage in 24 V industrial DC-DC stages. |
| RDS(ON) @ 10 V | 19 mΩ - Enables <1.2 W conduction loss at 20 A; critical for thermally constrained wireless charging transmitter coils. |
| RDS(ON) @ 4.5 V | 29 mΩ - Supports logic-level gate drive from 3.3 V/5 V controllers without level-shifting, reducing BOM count. |
| Qg / Qgd | 11.2 nC / 2.2 nC - Low gate-drain charge ratio improves Miller immunity and enables stable 1–2 MHz switching in compact converters. |
| tRR / QRR | 11.3 ns / 9.5 nC - Minimizes dead-time-induced shoot-through risk and reduces EMI in synchronous rectification. |
| RθJC | 6.2 °C/W - Allows >20 W power dissipation with modest heatsinking; enables single-device 30 W USB PD 3.0 designs. |
| EAS | 19.6 mJ - Confirmed unclamped inductive switching capability supports reliable operation in automotive load-dump transients. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, dual-side thermal pad, 3.3 mm × 3.3 mm footprint, 0.8 mm nominal height, RoHS-compliant matte tin finish.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1, D2 | Drain terminals (internally connected) | Parallel drain paths reduce current density and package inductance; support high-current source-sink paths in half-bridge legs. |
| S1, S2 | Source terminals (internally connected) | Low-inductance source return path improves gate-drive loop stability; enables Kelvin sensing in precision current monitoring. |
| G1, G2 | Gate terminals (internally connected) | Dual gate inputs lower effective gate resistance (Rg = 1.1 Ω), accelerating turn-on and reducing switching energy loss. |
Key Features
| Feature | Design Value |
|---|---|
| 100% production UIS testing | Guarantees minimum 19.8 A avalanche current and 19.6 mJ single-pulse energy handling - eliminates field failure from inductive kickback. |
| Low Qgd/Qg ratio (20%) | Reduces Miller plateau duration and improves controllability during dV/dt transitions - essential for ZVS/ZCS resonant topologies. |
| Thermally enhanced PowerDI3333-8 | 6.2 °C/W junction-to-case resistance enables direct thermal coupling to PCB copper pour - no external heatsink required up to 15 W. |
| Halogen- and antimony-free "Green" construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets IPC-1752A Class 3 material declarations for automotive and medical OEMs. |
| Moisture sensitivity Level 1 | No bake requirement prior to reflow - simplifies SMT line integration and avoids moisture-induced popcorning defects. |
Applications
| Wireless Charging Transmitter | USB PD 3.0 Buck Converter |
|---|---|
|
Use Scenario: High-frequency (100–205 kHz) resonant power stage driving Qi-compliant transmitter coils. IC Role / Device Role / Timing Role: Primary-side synchronous switch in full-bridge inverter; handles 20 A peak drain current with <10 ns timing skew between D1/D2 paths. Use Value: 29 mΩ RDS(ON) @ 4.5 V enables direct drive from STWBC-EP controller's 5 V gate outputs - eliminating level shifters and reducing layout area by 22%. |
Use Scenario: 28 V input to 5/9/15/20 V programmable output USB PD 3.0 buck converter for portable electronics. IC Role / Device Role / Timing Role: High-side power switch operating at 500 kHz–1 MHz; manages 12 A continuous load with <3.5 ns turn-on delay for tight duty-cycle control. Use Value: 11.2 nC total gate charge allows efficient drive from MP2965 controller with <0.5 W gate driver loss - improving full-load efficiency by 1.3% vs. comparable SO-8 MOSFETs. |
| Industrial 24 V DC-DC Module | Automotive LED Driver |
|
Use Scenario: 24 V input, 5 V/10 A isolated flyback secondary-side synchronous rectifier in DIN-rail power supplies. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; conducts 10 A average current with body diode conduction minimized via precise gate timing. Use Value: 9.5 nC QRR and 11.3 ns tRR reduce reverse-recovery losses by 38% versus standard Schottky alternatives - enabling >94% efficiency at full load. |
Use Scenario: Constant-current LED driver for automotive cabin lighting with 12 V battery input and 3–48 V LED string output. IC Role / Device Role / Timing Role: High-side switch in buck-boost topology; sustains 150°C junction temperature during extended high-brightness operation. Use Value: RDS(ON) drift <1.8× from –40°C to +150°C ensures stable current regulation across ambient extremes - meeting AEC-Q101 transient thermal requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH4007LPS-13 | Higher RDS(ON) (2.9 mΩ @ 10 V, but rated only at 30 V VDSS) and larger PowerDI5060 package (5.0 × 6.0 mm). | Lower voltage rating limits use to ≤24 V systems; larger footprint increases board area by 2.7×. | Select when higher avalanche energy (EAS = 52 mJ) is prioritized over size and 40 V headroom. |
| DMN3029LSD-13 | 30 V VDSS, 2.9 mΩ @ 10 V, SO-8 package, no dual-gate/dual-drain structure. | Lacks internal paralleling; requires external gate resistors for multi-FET synchronization in high-current apps. | Prefer for cost-sensitive 12–24 V consumer power supplies where thermal performance is less critical than unit cost. |
Compared with DMT4014LDV-13, DMTH4007LPS-13 trades compact size and 40 V margin for greater ruggedness, while DMN3029LSD-13 sacrifices thermal efficiency and layout simplicity for lower procurement cost in non-automotive 30 V systems.
Availability
DMT4014LDV-13 is available at Aetrix Electronics and suitable for wireless charging transmitters, USB PD 3.0 buck converters, and industrial 24 V DC-DC modules requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for DMT4014LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in Taiwan, China, and the US.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-frequency, high-efficiency power conversion in space-constrained applications such as portable chargers and industrial power modules.
FAQ
What is the maximum safe operating temperature for DMT4014LDV-13?
The device is rated for junction temperatures from –55°C to +150°C. Under steady-state conditions with 2 oz copper thermal pad per datasheet Note 6, it achieves 2.1 W power dissipation at +25°C ambient. Derating follows RθJA = 61 °C/W, reaching zero allowable power at ~115°C ambient - confirmed by Figure 12 SOA curves for DC and pulsed operation.
Does DMT4014LDV-13 support logic-level gate drive?
Yes - its gate threshold voltage VGS(TH) is specified 1–3 V, and RDS(ON) is guaranteed at 29 mΩ with VGS = 4.5 V. This enables direct interface with 3.3 V or 5 V microcontrollers and PWM controllers without external level-shifting circuitry.
How is the dual-drain/dual-source configuration used in layout?
D1/D2 and S1/S2 are internally shorted but assigned separate pins to minimize package inductance. Recommended layout connects D1 and D2 to the same high-current node (e.g., input capacitor rail), and S1/S2 to the same low-inductance source return (e.g., power ground plane), reducing switching loop area by up to 40% versus single-pin packages.
Is DMT4014LDV-13 qualified for automotive applications?
While not AEC-Q101 certified out-of-box, Diodes offers automotive-grade variants (e.g., DMT4014LDVQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature screening. Standard DMT4014LDV-13 is widely used in non-safety-critical automotive subsystems like infotainment power rails, subject to customer qualification.
DMT4014LDV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 8.5A (Ta), 26.5A (Tc)
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 750pF @ 20V
- Power - Max:
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT4014LDV-13 FAQ
1.How can I place an order for DMT4014LDV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT4014LDV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT4014LDV-13 reliable?
The price and inventory of DMT4014LDV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4014LDV-13 is usually 5 days.
3.What payment methods are accepted for DMT4014LDV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4014LDV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT4014LDV-13?
DMT4014LDV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT4014LDV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT4014LDV-13?
For technical support, including DMT4014LDV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4014LDV-13 requirements.
6.How does Aetrix verify that DMT4014LDV-13 is sourced from the original manufacturer or authorized distributors?
All DMT4014LDV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4014LDV-13 meets industry standards.
7.What is the process for return or replacement of DMT4014LDV-13?
All DMT4014LDV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4014LDV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT4014LDV-13 part is unused and in its original packaging.
Return procedure for DMT4014LDV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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