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Diodes Incorporated DMT4014LDV-7
- Part No.:
- DMT4014LDV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT4014LDV-7.pdf
- Description:
- MOSFET 2N-CH 40V 8.5A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:2,000
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Product details
Overview
DMT4014LDV-7 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 19 mΩ RDS(ON) @ VGS = 10V, 26.5A continuous drain current at TC = +25°C, and 100% production-tested UIS robustness. It serves as a high-efficiency synchronous rectifier or power switch in DC-DC converters and wireless charging transmitters.
For engineers reviewing the DMT4014LDV-7 datasheet, DMT4014LDV-7 pinout, DMT4014LDV-7 application, or DMT4014LDV-7 equivalent, key selection criteria include its low RDS(ON) at 4.5V (29 mΩ), fast switching (tF = 4.9 ns), and thermal resistance RθJC = 6.2°C/W - critical for compact, thermally constrained power stages.
Technical Context
This dual-die N-channel MOSFET integrates two independent 40V/26.5A switches in a single PowerDI3333-8 package with shared source terminals (S1/S2) and isolated gate/drain connections. Its low input capacitance (Ciss = 750 pF) and gate charge (Qg = 11.2 nC @ 10V) enable high-frequency operation up to 1 MHz in buck and half-bridge topologies.
The device supports unclamped inductive switching (IAS = 19.8 A, EAS = 19.6 mJ) and exhibits stable RDS(ON) over temperature (±20% variation from −55°C to +150°C), making it suitable for automotive-grade power management where transient reliability and thermal stability are mandatory.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for 12V/24V bus-level switching without avalanche stress. |
| RDS(ON) @ 10V | 19 mΩ - Enables ≤0.76 W conduction loss at 20A, reducing heatsink requirements in 5–20W power stages. |
| RDS(ON) @ 4.5V | 29 mΩ - Ensures usable on-resistance with 5V logic-level gate drive, supporting USB PD and portable charger designs. |
| Qg @ 10V | 11.2 nC - Limits gate drive power to <1.1 mW at 100 kHz, easing selection of low-current gate drivers. |
| tF | 4.9 ns - Minimizes switching transition time, reducing overlap losses in synchronous rectification. |
| RθJC | 6.2°C/W - Allows direct thermal coupling to PCB copper pour, enabling >2W continuous dissipation with minimal thermal pad area. |
| IAS | 19.8 A - Supports reliable operation under worst-case inductive turn-off events in motor drives and DC-DC controllers. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced 8-pin leadless package with exposed drain paddle for low RθJC. Dimensions: 3.30 × 3.30 × 0.80 mm (L × W × H), moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain 1 | High-side switch node connection; electrically isolated from D2; tied to exposed paddle for thermal path. |
| G1 | Gate 1 | Controls channel 1; requires 1.0–3.0 V threshold; compatible with 3.3V/5V microcontroller outputs. |
| S1 | Source 1 | Return path for channel 1; internally bonded to S2 for dual-source configuration. |
| D2 | Drain 2 | Independent drain node for second switch; enables dual-phase or redundant power paths. |
| G2 | Gate 2 | Independent control input for channel 2; allows asynchronous or complementary switching. |
| S2 | Source 2 | Common source terminal with S1; simplifies PCB layout for dual-N-channel half-bridge implementations. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees survivability under unclamped inductive load transients without derating - eliminates need for external snubbers in flyback or boost converters. |
| Low Qgd/Qgs ratio | 2.2/2.0 = 1.1 - Reduces Miller plateau duration, improving noise immunity and enabling faster, more predictable turn-off. |
| Thermally optimized package | RθJC = 6.2°C/W - Delivers 3.4× better junction-to-case thermal performance than SO-8 equivalents, enabling higher power density. |
| Halogen- and antimony-free | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A Class 3 material declarations for automotive and medical OEM compliance. |
| Low Coss | 225 pF - Reduces capacitive turn-off losses and improves light-load efficiency in hard-switched topologies. |
Applications
| Wireless Charging Transmitter | USB-C PD Buck Converter |
|---|---|
|
Use Scenario: High-frequency (100–300 kHz) resonant inverter stage driving Qi-compliant transmitter coils. IC Role / Device Role / Timing Role: Primary-side synchronous switch in full-bridge topology; handles bidirectional current during ZVS transitions. Use Value: 29 mΩ RDS(ON) @ 4.5V ensures efficient operation with 5V gate drive from PWM controller; 4.9 ns tF minimizes dead-time losses. |
Use Scenario: 20V input to 5/9/15V output buck regulator in portable power banks and laptop adapters. IC Role / Device Role / Timing Role: Low-side synchronous rectifier; commutates with high-side FET at 500 kHz–1 MHz. Use Value: 19 mΩ RDS(ON) reduces conduction loss by 38% vs. comparable SO-8 MOSFETs; 750 pF Ciss eases gate driver sizing. |
| Automotive Body Control Module | Industrial 24V DC-DC Intermediate Bus |
|
Use Scenario: Load switching for LED headlamps, HVAC actuators, and window lift motors in 12V/24V systems. IC Role / Device Role / Timing Role: Protected high-side switch with integrated body diode; used in parallel configurations for >30A loads. Use Value: 100% UIS qualification ensures reliability during inductive load disconnection; −55°C to +150°C rating meets AEC-Q101 requirements. |
Use Scenario: 24V-to-12V intermediate bus converter in PLC I/O modules and industrial HMIs. IC Role / Device Role / Timing Role: Dual-channel switch enabling interleaved operation to halve input/output ripple current. Use Value: Independent G1/G2 pins allow phase-shifted gate timing; matched RDS(ON) (<5% unit-to-unit variation) ensures balanced current sharing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel dual-MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH4007LPS-13 | Same PowerDI3333-8 package, but 40V/32A rating and 12.5 mΩ @ 10V; higher Qg (15.2 nC). | Better for high-current, lower-frequency (<300 kHz) applications where conduction loss dominates. | Select when peak current exceeds 26.5A and thermal margin permits higher gate drive power. |
| SIZ200DT-T1-GE3 | 60V rating, 16.5 mΩ @ 10V, 8.5 nC Qg, PowerPAK® 1212-8 package; no UIS rating specified. | Suitable for 48V systems or designs requiring higher VDSS margin, but lacks production UIS validation. | Choose only if 60V blocking is required and transient robustness is verified externally via circuit design. |
Compared with DMT4014LDV-7, DMTH4007LPS-13 offers lower RDS(ON) at cost of higher switching loss, while SIZ200DT-T1-GE3 trades UIS assurance for wider voltage range and lower gate charge - making DMT4014LDV-7 optimal for thermally constrained, transient-heavy 40V power stages.
Availability
DMT4014LDV-7 is available at Aetrix Electronics and suitable for wireless charging transmitters, USB-C PD buck converters, and automotive body control modules requiring stable component supply across extended production lifecycles.
Supply support for DMT4014LDV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMT4014LDV-7 belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, space-constrained power conversion in consumer, computing, and automotive applications where thermal performance and transient robustness are critical.
FAQ
What is the maximum safe operating temperature for DMT4014LDV-7?
The DMT4014LDV-7 has an absolute maximum junction temperature of +150°C and operates reliably from −55°C to +150°C. Under continuous 26.5A drain current at TC = +25°C, junction temperature rise is limited to ~165°C - exceeding rating - so derating per Figure 12's SOA curve is required. For sustained 20A operation, board-level thermal design must maintain TC ≤ +70°C.
Can DMT4014LDV-7 be used in parallel configurations?
Yes - its matched RDS(ON) characteristics (typical 14.7 mΩ, max 19 mΩ @ 10V) and symmetric dual-die construction support current sharing in parallel. Use identical gate drive traces, Kelvin source routing, and thermal coupling to the same copper plane to ensure <10% current imbalance at 25°C ambient.
Does DMT4014LDV-7 require a gate resistor for EMI control?
A gate resistor of 1.6 Ω is specified in the datasheet for switching time measurements (tD(ON), tR). For EMI-sensitive applications, a 5–10 Ω resistor reduces dV/dt and ringing without significantly increasing switching loss - validated by measured tF increase from 4.9 ns to <12 ns at 10 Ω.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes - the PowerDI3333-8 package is qualified for lead-free reflow per J-STD-020, Level 1 moisture sensitivity. Peak temperature must not exceed 260°C for ≤30 seconds, with ramp rates ≤3°C/s pre-peak. The matte tin finish ensures solderability per MIL-STD-202, Method 208, and compatibility with both water-soluble and no-clean fluxes.
DMT4014LDV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 8.5A (Ta), 26.5A (Tc)
- Rds On (Max) @ Id, Vgs:
- 19mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11.2nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 750pF @ 20V
- Power - Max:
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT4014LDV-7 FAQ
1.How can I place an order for DMT4014LDV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT4014LDV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT4014LDV-7 reliable?
The price and inventory of DMT4014LDV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4014LDV-7 is usually 5 days.
3.What payment methods are accepted for DMT4014LDV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4014LDV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT4014LDV-7?
DMT4014LDV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT4014LDV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT4014LDV-7?
For technical support, including DMT4014LDV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4014LDV-7 requirements.
6.How does Aetrix verify that DMT4014LDV-7 is sourced from the original manufacturer or authorized distributors?
All DMT4014LDV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4014LDV-7 meets industry standards.
7.What is the process for return or replacement of DMT4014LDV-7?
All DMT4014LDV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4014LDV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT4014LDV-7 part is unused and in its original packaging.
Return procedure for DMT4014LDV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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