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Diodes Incorporated DMT4015LDV-13
- Part No.:
- DMT4015LDV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT4015LDV-13.pdf
- Description:
- MOSFET 2N-CH 40V 7.8A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:5,858
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Product details
Overview
DMT4015LDV-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 20 mΩ RDS(ON) @ VGS = 10 V, 21.2 A continuous drain current at TC = +25°C, and 100% production-tested UIS robustness-designed for high-efficiency DC-DC converters and wireless charging power stages.
For engineers reviewing the DMT4015LDV-13 datasheet, DMT4015LDV-13 pinout, DMT4015LDV-13 application, or DMT4015LDV-13 equivalent, key selection criteria include low RDS(ON) at 4.5 V drive (25 mΩ), fast switching (tF = 8.9 ns), body diode recovery performance (tRR = 26.7 ns), and thermal resistance (RθJC = 8.3 °C/W) for compact power stage layout.
Technical Context
This dual-die N-channel MOSFET integrates two matched 40 V, 21.2 A devices in a single PowerDI3333-8 package with independent gate, source, and drain terminals per channel. Its design targets synchronous rectification and half-bridge topologies where low conduction loss and tight gate charge matching (Qgd/Qgs = 3.4/2.9 nC) reduce shoot-through risk and improve efficiency.
The device uses trench-gate technology to achieve 15.3 mΩ typical RDS(ON) at 10 V and maintains stable threshold voltage (VGS(TH) = 0.75–2.5 V) across –55°C to +150°C. Its 808 pF Ciss and 30 pF Crss support high-frequency operation up to 1 MHz in buck converters with minimal Miller-induced oscillation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Supports input rails up to 36 V nominal in industrial and USB PD-compliant systems. |
| RDS(ON) Max | 20 mΩ @ VGS = 10 V - Enables ≤0.43 W conduction loss at 10 A, critical for thermally constrained wireless charging coils. |
| ID Continuous | 21.2 A @ TC = +25°C - Sustains peak load currents in 20–30 W DC-DC modules without derating on standard 2 oz copper PCBs. |
| Qg Total | 15.7 nC @ VGS = 10 V - Allows efficient gate driving with <1 W driver loss at 1 MHz switching in high-density POL converters. |
| tRR | 26.7 ns - Minimizes reverse recovery energy loss in synchronous rectifiers, improving light-load efficiency by >2% vs. standard Si MOSFETs. |
| RθJC | 8.3 °C/W - Enables direct thermal coupling to heatsink or copper plane, supporting 2.0 W steady-state dissipation with <17°C junction rise. |
| EAS | 21.4 mJ - Withstands repetitive inductive switching events in motor drivers and boost converters without avalanche failure. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, 8-terminal molded plastic case with matte tin–annealed copper leadframe; UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1 | Drain of Channel 1 | High-current output node; electrically isolated from D2; connects to primary-side switch node in dual-phase buck. |
| G1 | Gate of Channel 1 | Control input for first MOSFET; requires <16 V max drive; ESD-protected with integrated gate diode. |
| S1 | Source of Channel 1 | Return path for Channel 1; tied to local ground or phase node; shares no internal connection with S2. |
| D2 | Drain of Channel 2 | Independent high-side or low-side drain; enables dual-switch configurations without external isolation. |
| G2 | Gate of Channel 2 | Separate control terminal; matched Qg and VGS(TH) ensures balanced timing in paralleled or complementary drives. |
| S2 | Source of Channel 2 | Independent return for Channel 2; allows floating-source topology (e.g., high-side synchronous rectifier). |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness up to 20.7 A and 21.4 mJ per pulse-eliminates screening failures in unregulated input applications. |
| Low RDS(ON) @ 4.5 V | 25 mΩ maximum enables logic-level drive compatibility with 3.3 V/5 V controllers, reducing gate driver complexity and cost. |
| Matched dual-die structure | Identical RDS(ON), Qg, and tRR between channels ensures balanced current sharing and timing in paralleled or interleaved designs. |
| ESD-protected gate | HBM rating >2 kV prevents handling damage during SMT assembly and field service, improving manufacturing yield and field reliability. |
| Green, RoHS 3 compliant | Halogen- and antimony-free compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and medical environmental requirements. |
Applications
| Wireless Charging Transmitter | Point-of-Load DC-DC Converter |
|---|---|
|
Use Scenario: High-frequency (100–205 kHz) resonant inverter driving Qi-compliant transmitter coils. IC Role / Device Role: Half-bridge power switch pair delivering 15–20 W output with ZVS capability. Use Value: Low Qgd/Qgs ratio and 26.7 ns tRR minimize dead-time losses and enable reliable zero-voltage switching at full load. |
Use Scenario: 12 V input to 3.3 V/5 V step-down regulator for FPGA I/O banks in industrial edge controllers. IC Role / Device Role: Synchronous rectifier in 500 kHz buck converter with integrated controller. Use Value: 20 mΩ RDS(ON) reduces conduction loss by 35% vs. discrete alternatives, enabling 94% peak efficiency at 10 A. |
| USB-C Power Delivery Module | Automotive Body Control Unit |
|
Use Scenario: Dual-phase 20 V–28 V input buck converter supplying 5 V/3 A to USB-C port controllers and PD PHYs. IC Role / Device Role: Primary-side switching FETs operating in interleaved mode to reduce input ripple and EMI. Use Value: Matched dual-die characteristics ensure equal current split and thermal distribution, extending lifetime under 85°C ambient. |
Use Scenario: 12 V supply regulation for LED lighting and window lift motor drivers in passenger compartment modules. IC Role / Device Role: High-side load switch with integrated protection for 5 A loads. Use Value: 40 V VDSS and –55°C to +150°C rating meet AEC-Q101 stress requirements without derating in under-hood environments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT4015LSDV-13 | Same die, but with Schottky body diode (VSD = 0.45 V typ); 10% higher Ciss (890 pF). | Better light-load efficiency in flyback snubbers; less suitable for hard-switched synchronous rectification due to higher Crss. | Select when body diode conduction dominates duty cycle (e.g., discontinuous conduction mode converters). |
| DMN3029LFD-13 | 30 V rating, 2.9 mΩ RDS(ON) @ 10 V, SO-8 package; no dual-die integration. | Limited to ≤28 V input systems; requires two separate packages for dual-channel use, increasing board area by 40%. | Choose only if lower RDS(ON) outweighs layout penalty and thermal coupling benefits of PowerDI3333-8. |
Compared with DMT4015LSDV-13, the DMT4015LDV-13 offers superior hard-switching robustness and tighter Crss control; versus DMN3029LFD-13, it delivers integrated dual-channel functionality with 35% smaller footprint and shared thermal path-critical for space-constrained USB PD and automotive modules.
Availability
DMT4015LDV-13 is available at Aetrix Electronics and suitable for wireless charging transmitters, point-of-load DC-DC converters, and USB-C power delivery modules requiring stable component supply, consistent parametric performance, and long-term lifecycle support.
Supply support for DMT4015LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in ISO/TS 16949-certified facilities.
The PowerDI3333-8 MOSFET product line targets high-density power conversion, emphasizing low RDS(ON), fast switching, and robust packaging for consumer, industrial, and automotive power management systems.
FAQ
What is the maximum gate-source voltage rating for DMT4015LDV-13?
The absolute maximum VGS is ±16 V, as specified in the Maximum Ratings table. Operation beyond this level risks permanent gate oxide damage. Recommended drive range is 4.5 V to 10 V for optimal RDS(ON) and switching speed trade-off, with 12 V clamping advised in noisy environments.
Does DMT4015LDV-13 have an integrated body diode, and what is its forward voltage?
Yes, each channel includes a monolithic body diode with VSD = 0.7–1.2 V at IS = 1 A and VGS = 0 V. The diode is optimized for fast recovery (tRR = 26.7 ns) and low QRR (16.2 nC), making it suitable for synchronous rectification in buck and LLC topologies.
Can DMT4015LDV-13 be used in automotive applications?
While not AEC-Q101 qualified out-of-box, the device is manufactured in IATF 16949-certified facilities and supports automotive-grade change control. Diodes Incorporated offers PPAP-capable versions (e.g., DMT4015LDVQ-13) with full qualification documentation upon request for body control and infotainment power supplies.
How does the PowerDI3333-8 package compare thermally to SO-8 for the same die?
PowerDI3333-8 achieves RθJC = 8.3 °C/W versus ~25 °C/W for standard SO-8, due to exposed copper drain pads on both top and bottom. This enables direct thermal interface to PCB copper planes or heatsinks, reducing junction-to-ambient resistance by up to 45% in identical layouts.
DMT4015LDV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 7.8A (Ta), 21.2A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 808pF @ 30V
- Power - Max:
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT4015LDV-13 FAQ
1.How can I place an order for DMT4015LDV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT4015LDV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT4015LDV-13 reliable?
The price and inventory of DMT4015LDV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4015LDV-13 is usually 5 days.
3.What payment methods are accepted for DMT4015LDV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4015LDV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT4015LDV-13?
DMT4015LDV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT4015LDV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT4015LDV-13?
For technical support, including DMT4015LDV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4015LDV-13 requirements.
6.How does Aetrix verify that DMT4015LDV-13 is sourced from the original manufacturer or authorized distributors?
All DMT4015LDV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4015LDV-13 meets industry standards.
7.What is the process for return or replacement of DMT4015LDV-13?
All DMT4015LDV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4015LDV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT4015LDV-13 part is unused and in its original packaging.
Return procedure for DMT4015LDV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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