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Diodes Incorporated DMT4015LDV-7
- Part No.:
- DMT4015LDV-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT4015LDV-7.pdf
- Description:
- MOSFET 2N-CH 40V 7.8A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:9,238
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Product details
Overview
DMT4015LDV-7 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UXC) package, featuring RDS(ON) = 20 mΩ @ VGS = 10 V, ID = 21.2 A at TC = +25°C, and 100% production-tested UIS robustness. It serves as a high-efficiency synchronous rectifier or power switch in compact DC-DC converters for wireless charging transmitters.
For engineers reviewing the DMT4015LDV-7 datasheet, DMT4015LDV-7 pinout, DMT4015LDV-7 application, or DMT4015LDV-7 equivalent, key selection criteria include low RDS(ON) at 4.5 V drive, fast switching (tF = 8.9 ns), thermal resistance RθJC = 8.3°C/W, and ESD-protected gate for board-level reliability in space-constrained power stages.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and controlled gate charge (Qg = 15.7 nC @ VGS = 10 V). Its dual-die configuration in PowerDI3333-8 enables parallel source/drain terminals for current sharing and reduced PCB layout inductance.
The device integrates gate protection diodes per channel and supports operation from –55°C to +150°C junction temperature. Its body diode exhibits tRR = 26.7 ns and QRR = 16.2 nC under 10 A/100 A/µs conditions-critical for ZVS/ZCS soft-switching topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage compatible with 24 V input rail systems and 36 V automotive nominal supplies. |
| RDS(ON) | 20 mΩ @ VGS = 10 V - Enables ≤0.43 W conduction loss at 10 A continuous drain current in thermally constrained layouts. |
| ID (TC = 25°C) | 21.2 A - Sustains high pulsed load currents in boost converter primary switches without derating. |
| Qg | 15.7 nC @ VGS = 10 V - Allows efficient gate driving with standard 1–2 A peak drivers at >1 MHz switching frequencies. |
| tF | 8.9 ns - Minimizes turn-off energy loss in hard-switched buck regulators operating above 500 kHz. |
| RθJC | 8.3°C/W - Enables direct thermal coupling to heatsink or copper pour for <10°C junction rise at 2 W dissipation. |
| EAS | 21.4 mJ - Supports reliable unclamped inductive switching in flyback snubberless designs up to 20.7 A avalanche current. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, 8-terminal molded plastic case with matte tin–annealed copper leadframe; UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D1, D2 | Drain (parallel-connected) | Shared high-current path for main power conduction; dual pins reduce current density and parasitic inductance. |
| S1, S2 | Source (parallel-connected) | Low-inductance return path for synchronous rectification; enables Kelvin sensing in precision current monitoring. |
| G1, G2 | Gate (parallel-connected) | Redundant gate inputs improve drive stability and reduce gate loop inductance in high-dI/dt applications. |
| Gate Protection Diode Anode | ESD clamp node | Internal diode to VSS limits gate overvoltage during handling or transient events (±16 V rating). |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees minimum 20.7 A single-pulse avalanche current capability without screening failure-critical for flyback and LLC resonant converters. |
| Low RDS(ON) @ 4.5 V | 25 mΩ enables full-load operation from 5 V logic-level gate drivers, eliminating need for level-shifters in USB PD and portable power designs. |
| Low Ciss/Coss ratio | Ciss = 808 pF, Coss = 279 pF - Improves Miller immunity and reduces gate drive loss in high-side configurations. |
| Thermally enhanced package | RθJC = 8.3°C/W - Delivers 2× higher power density than SO-8 equivalents, supporting 2 W dissipation on minimal 1-inch² copper area. |
| ESD-protected gate | HBM rating ≥2 kV - Eliminates external gate protection components in consumer-grade wireless charging pads and IoT power modules. |
Applications
| Wireless Charging Transmitter | USB-C PD Buck-Boost Converter |
|---|---|
Use Scenario: High-frequency (100–205 kHz) half-bridge in Qi-compliant 15 W transmitter with synchronous rectification. IC Role / Device Role: Low-side synchronous rectifier switch with fast body diode recovery (tRR = 26.7 ns) to minimize reverse conduction loss. Use Value: 20 mΩ RDS(ON) at 10 V drive reduces conduction loss by 35% vs. legacy SO-8 MOSFETs, enabling 94% system efficiency at full load. |
Use Scenario: Output stage switch in bidirectional 20 V/5 A USB-C PD 3.1 buck-boost controller powering laptops and monitors. IC Role / Device Role: High-current, low-RDS(ON) power FET with dual-source terminals for Kelvin current sensing and thermal feedback. Use Value: Parallel S1/S2 terminals support accurate ±1% current measurement while maintaining <10 mΩ effective on-resistance at PCB layout scale. |
| Automotive Body Control Module | Industrial 24 V DC-DC Point-of-Load |
Use Scenario: Load switch for LED headlamp driver with PWM dimming and short-circuit protection in AEC-Q101–qualified systems. IC Role / Device Role: Protected high-side switch with integrated gate clamp and 150°C max junction rating for under-hood environments. Use Value: 100% UIS qualification ensures survival during battery disconnect transients (ISO 7637-2 Pulse 5a), reducing need for external TVS. |
Use Scenario: Primary-side switch in isolated 24 V → 5 V/12 V flyback converter for PLC I/O modules requiring >10-year field life. IC Role / Device Role: Robust power switch with 21.4 mJ avalanche energy rating to absorb leakage inductance spikes without snubber circuitry. Use Value: Eliminates discrete snubber components, reducing BOM count by 3 parts and improving MTBF by 22% in 85°C ambient deployments. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT4015LSD-7 | Same die, SO-8 package; RθJA = 62°C/W (vs. 61.2°C/W for DMT4015LDV-7); no dual-drain/source terminals. | Lacks parallel pins for current sharing; unsuitable for >15 A continuous routing without thermal vias. | Select when legacy SO-8 footprint compatibility is required and thermal budget allows 2× larger copper area. |
| DMTH4007LPS-13 | 40 V, 7.5 mΩ @ 10 V, PowerDI5060; Qg = 24.5 nC; RθJC = 3.5°C/W but larger footprint. | Higher conduction efficiency but slower switching (tF = 14.5 ns); requires larger PCB real estate. | Select when minimizing conduction loss dominates over switching frequency and board area constraints. |
Compared with DMT4015LSD-7, the DMT4015LDV-7 delivers superior thermal performance in ultra-compact layouts via its PowerDI3333-8 package, while DMTH4007LPS-13 trades faster switching for lower RDS(ON)-making DMT4015LDV-7 optimal for 500 kHz–2 MHz DC-DC where layout density and gate drive simplicity are critical.
Availability
DMT4015LDV-7 is available at Aetrix Electronics and suitable for wireless charging transmitters, USB-C PD power delivery systems, and industrial 24 V DC-DC point-of-load converters requiring stable component supply across multi-year production cycles.
Supply support for DMT4015LDV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This MOSFET belongs to Diodes' PowerDI® portfolio, engineered specifically for high-density, high-efficiency power conversion in consumer, computing, and industrial applications where thermal performance and layout compactness are prioritized.
FAQ
What is the maximum continuous drain current at TA = +70°C?
The DMT4015LDV-7 supports 6.3 A continuous drain current at ambient temperature +70°C with standard FR-4 PCB mounting (2 oz copper, thermal bias to bottom layer). This rating assumes no forced airflow and accounts for RθJA = 61.2°C/W under those specific layout conditions.
Does this MOSFET require external gate resistors for EMI control?
No external gate resistor is required for basic operation, but a 2.2 Ω series resistor is recommended to dampen ringing caused by the 1.4 Ω intrinsic gate resistance interacting with PCB trace inductance. This value balances switching speed (tF ~9 ns) and radiated emissions in Class B conducted EMI tests.
Can DMT4015LDV-7 be used in synchronous rectification for 100 kHz flyback converters?
Yes-the device's 26.7 ns body diode reverse recovery time and low QRR (16.2 nC) enable efficient synchronous rectification at 100 kHz. Its VGS(TH) range (0.75–2.5 V) ensures reliable turn-on with typical 5 V controller gate drives without risk of shoot-through.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes-the PowerDI3333-8 meets IPC/JEDEC J-STD-020 moisture sensitivity Level 1 and is qualified for standard lead-free reflow profiles (peak 260°C, 60 s above 217°C). The matte tin finish ensures solderability per MIL-STD-202, Method 208 without pre-baking.
DMT4015LDV-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- -
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 7.8A (Ta), 21.2A (Tc)
- Rds On (Max) @ Id, Vgs:
- 20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 808pF @ 30V
- Power - Max:
- 1.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT4015LDV-7 FAQ
1.How can I place an order for DMT4015LDV-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT4015LDV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT4015LDV-7 reliable?
The price and inventory of DMT4015LDV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4015LDV-7 is usually 5 days.
3.What payment methods are accepted for DMT4015LDV-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4015LDV-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT4015LDV-7?
DMT4015LDV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT4015LDV-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT4015LDV-7?
For technical support, including DMT4015LDV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4015LDV-7 requirements.
6.How does Aetrix verify that DMT4015LDV-7 is sourced from the original manufacturer or authorized distributors?
All DMT4015LDV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4015LDV-7 meets industry standards.
7.What is the process for return or replacement of DMT4015LDV-7?
All DMT4015LDV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4015LDV-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT4015LDV-7 part is unused and in its original packaging.
Return procedure for DMT4015LDV-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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