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Diodes Incorporated DMT4031LFDF-7
- Part No.:
- DMT4031LFDF-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 6-UDFN Exposed Pad
- Datasheet:
-
DMT4031LFDF-7.pdf
- Description:
- MOSFET BVDSS: 31V~40V U-DFN2020-
- Quantity:
- Payment:
- Shipping:
Inventory:4,549
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Product details
Overview
DMT4031LFDF-7 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in U-DFN2020-6 (Type F) package, optimized for high-efficiency power switching with RDS(ON) = 26 mΩ @ VGS = 10 V and 47 mΩ @ VGS = 4.5 V, rated for 6.8 A continuous drain current at TA = +25°C, and used in DC-DC converters, adapter switches, and wireless charging circuits.
For engineers reviewing the DMT4031LFDF-7 datasheet, DMT4031LFDF-7 pinout, DMT4031LFDF-7 application, or DMT4031LFDF-7 equivalent, key selection criteria include low-profile 0.6 mm height, 100% production-tested UIS robustness, ESD-protected gate, thermal resistance RθJA = 64 °C/W on 1-inch² copper, and compatibility with 4.5 V logic-level drive.
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve low RDS(ON) while maintaining fast switching performance: tD(ON) = 2.9 ns, tR = 4.1 ns, Qg = 7.0 nC @ VGS = 10 V, and Ciss = 362 pF at VDS = 20 V. Its body diode exhibits tRR = 18.0 ns and QRR = 6.0 nC under IF = 6 A / di/dt = 100 A/μs conditions.
The device features an integrated gate protection diode and ESD-rated gate structure (±10 µA IGSS @ ±16 V), operates across –55°C to +150°C junction temperature range, and supports avalanche energy EAS = 7.6 mJ with IAS = 12.3 A under L = 0.1 mH test condition.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum drain-source blocking voltage before avalanche onset; defines safe operating range in 36 V nominal bus applications. |
| RDS(ON) | 26 mΩ @ VGS = 10 V - Enables <150 mW conduction loss at 6 A, critical for thermally constrained DC-DC output stages. |
| ID (max) | 6.8 A @ TA = +25°C - Continuous current rating with 2 oz copper PCB layout per Note 6; derates to 5.5 A at +70°C ambient. |
| Qg | 7.0 nC @ VGS = 10 V - Gate charge determines driver strength requirement; enables efficient 1–2 MHz switching with low gate-drive power. |
| RθJA | 64 °C/W - Thermal resistance with 1-inch² copper pad; allows ~2 W dissipation at ΔT = 128°C rise above 25°C ambient. |
| tRR | 18.0 ns - Body diode reverse recovery time; minimizes shoot-through risk and switching loss in synchronous buck topologies. |
| EAS | 7.6 mJ - Single-pulse avalanche energy rating; ensures survivability during inductive load transients without external snubbing. |
Pinout & Package
U-DFN2020-6 (Type F) package: 2.0 mm × 2.0 mm footprint, 0.6 mm profile, NiPdAu-plated terminals, moisture sensitivity level 1, UL 94V-0 mold compound.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Top-left corner marker) | Source | Primary current return path; connected to PCB ground plane for low-inductance thermal and electrical path. |
| Pin 2 | Gate | Control terminal; requires ESD-safe handling and <16 V absolute max drive; protected by internal Zener clamp. |
| Pin 3 | Drain | Main power output node; tied to switch-node in buck converter; exposed pad (Pin 6) is electrically connected to Drain. |
| Pin 4 | Source | Secondary source connection; paralleled with Pin 1 to reduce package resistance and improve current sharing. |
| Pin 5 | Gate | Redundant gate terminal; bonded to same die region as Pin 2 to lower gate loop inductance and improve dV/dt immunity. |
| Pin 6 (Exposed Pad) | Drain | Thermal and electrical connection to drain; must be soldered to large copper area for thermal management and EMI reduction. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees minimum 12.3 A avalanche current and 7.6 mJ energy handling per unit-no screening failures in field-relevant inductive stress. |
| 0.6 mm profile | Enables ultra-thin power modules and portable chargers where Z-height is constrained to ≤0.7 mm including PCB and components. |
| PCB footprint 4 mm² | Reduces board area by >50% vs. SO-8 or PowerPAK 1212-8; supports dense multi-phase VRM layouts in space-limited end equipment. |
| ESD-protected gate | Withstands ±10 µA leakage at ±16 V gate bias and passes HBM >2 kV-reduces assembly-line gate oxide damage risk without external TVS. |
| Lead-free & halogen-free | Complies with RoHS 3 (2015/863/EU) and Diodes' "Green" definition (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb); suitable for automotive PPAP. |
Applications
| DC-DC Converter | USB-C Adapter Switch |
|---|---|
Use Scenario: Synchronous rectifier in 12 V → 5 V/3.3 V buck converter for FPGA or SoC core rail. IC Role / Device Role / Timing Role: Low-side switch controlling output current path; commutates at 500 kHz–2 MHz with precise dead-time control. Use Value: 26 mΩ RDS(ON) reduces conduction loss by 35% vs. comparable 40 V MOSFETs, enabling >95% efficiency at 5 A load. |
Use Scenario: Primary-side high-side switch in 65 W USB-C PD adapter with QR flyback topology. IC Role / Device Role / Timing Role: Main power switch turning on/off 100 kHz AC line-derived bus; handles 6.8 A peak primary current. Use Value: 47 mΩ @ 4.5 V ensures full enhancement with standard PWM controller gate drivers, eliminating level-shifter need. |
| Wireless Charging Transmitter | Industrial Sensor Node Power Switch |
Use Scenario: Half-bridge switch in 15 W Qi-compliant transmitter coil driver operating at 110–205 kHz. IC Role / Device Role / Timing Role: High-frequency switching element in resonant LLC stage; subjected to repetitive 100 V+ VDS ringing. Use Value: 100% UIS qualification ensures reliable operation under coil detuning events without avalanche-induced failure. |
Use Scenario: Load switch enabling/disabling 3.3 V rail to LoRaWAN sensor module during deep-sleep cycles. IC Role / Device Role / Timing Role: Controlled power gate with <1 µA IDSS off-state leakage; toggled via microcontroller GPIO. Use Value: 0.6 mm height and 4 mm² footprint allow integration into compact IP67-rated enclosures without thermal derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT4031LSDQ-7 | Same die, SOT-23-6 package; RθJA = 150 °C/W; 3× larger footprint; no exposed drain pad. | Suitable for prototyping or low-volume manual assembly; not viable for high-power density designs. | Select only when U-DFN2020-6 reflow capability is unavailable or thermal budget permits higher junction rise. |
| DMN3029LSD-13 | 30 V VDSS, 29 mΩ @ 4.5 V, SOT-23-6; lower voltage rating but identical gate threshold and Qg. | Limited to ≤24 V input systems; unsuitable for 36 V industrial rails or 40 V adapter inputs. | Choose only if system maximum VIN ≤28 V and board space allows SOT-23-6; avoid for 40 V-rated applications. |
Compared with DMT4031LSDQ-7 and DMN3029LSD-13, DMT4031LFDF-7 delivers superior power density and thermal performance in space-constrained 40 V applications, while maintaining logic-level gate drive compatibility and production-proven UIS ruggedness.
Availability
DMT4031LFDF-7 is available at Aetrix Electronics and suitable for DC-DC converters, USB-C adapters, and wireless charging transmitters requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.
Supply support for DMT4031LFDF-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This part belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-frequency power conversion in consumer, computing, and industrial power supplies-emphasizing low RDS(ON), fast switching, and robust transient reliability.
FAQ
What is the maximum allowable gate-source voltage for DMT4031LFDF-7?
The absolute maximum VGS rating is ±16 V per the datasheet's Maximum Ratings table. Exceeding this risks permanent gate oxide damage. The device features integrated gate protection diodes, but sustained bias beyond ±16 V-even briefly-must be avoided. Recommended drive range is 0 V to 12 V for logic-level compatibility and margin.
Does DMT4031LFDF-7 require a gate resistor for stability?
A gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance (Ciss = 362 pF). Without it, parasitic oscillation may occur during fast edge transitions, increasing switching loss and EMI. The resistor value should balance turn-on speed against overshoot and driver capability.
Can DMT4031LFDF-7 be used in automotive applications?
While DMT4031LFDF-7 meets RoHS 3 and halogen-free requirements, it is not AEC-Q101 qualified. Diodes states that automotive-grade versions require specific change control and PPAP capability-contact Diodes directly for AEC-Q101 variants like DMT4031LFDFQ-7, which undergo additional stress testing and lot traceability.
How is thermal performance affected by PCB layout for DMT4031LFDF-7?
Thermal resistance drops from RθJA = 108 °C/W (minimal pad) to 64 °C/W (1-inch² copper) per datasheet Notes 5 and 6. The exposed drain pad (Pin 6) must be soldered to ≥100 mm² of inner/outer layer copper, thermally vias (≥6× 0.3 mm) to internal planes, and no silkscreen over thermal pads to achieve rated 2.0 W dissipation.
DMT4031LFDF-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 6-UDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 26mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 362 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.2W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- U-DFN2020-6 (Type F)
DMT4031LFDF-7 FAQ
1.How can I place an order for DMT4031LFDF-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT4031LFDF-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT4031LFDF-7 reliable?
The price and inventory of DMT4031LFDF-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT4031LFDF-7 is usually 5 days.
3.What payment methods are accepted for DMT4031LFDF-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT4031LFDF-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT4031LFDF-7?
DMT4031LFDF-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT4031LFDF-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT4031LFDF-7?
For technical support, including DMT4031LFDF-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT4031LFDF-7 requirements.
6.How does Aetrix verify that DMT4031LFDF-7 is sourced from the original manufacturer or authorized distributors?
All DMT4031LFDF-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT4031LFDF-7 meets industry standards.
7.What is the process for return or replacement of DMT4031LFDF-7?
All DMT4031LFDF-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT4031LFDF-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT4031LFDF-7 part is unused and in its original packaging.
Return procedure for DMT4031LFDF-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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