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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT43M8LFV-13

Name: DMT43M8LFV-13
Brand: Diodes Incorporated
SKU: DMT43M8LFV-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT43M8LFV-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT43M8LFV-13.pdf

Description:: MOSFET N-CH 40V 87A POWERDI3333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMT43M8LFV-13 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, featuring 4 mΩ R_DS(ON) @ V_GS = 10 V, 87 A continuous drain current at T_C = +25°C, and 3.3°C/W thermal resistance (junction-to-case). It serves as a high-current, low-loss power switch in synchronous buck converters and DC-DC power stages.

For engineers reviewing the DMT43M8LFV-13 datasheet, DMT43M8LFV-13 pinout, DMT43M8LFV-13 application, or DMT43M8LFV-13 equivalent, key selection criteria include R_DS(ON) at 4.5 V, body diode recovery charge (Q_RR = 39.5 nC), thermal performance in compact layouts, and compatibility with space-constrained PCBs requiring <33% board area vs. SO-8.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss while maintaining fast switching speed-evidenced by 21.1 nC total gate charge at V_GS = 4.5 V and 8.7 nC Q_gd. Its integrated body diode exhibits 0.8–1.0 V forward voltage at 20 A and 27.6 ns reverse recovery time under 400 A/µs di/dt.

The PowerDI3333-8 (Type UX) package uses an exposed drain pad for direct thermal path to PCB copper, enabling 45.4 W power dissipation at T_C = +25°C. Gate threshold voltage is tightly distributed (1.0–2.5 V), supporting robust 3.3 V and 5 V logic-level drive without external level shifting.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage in high-side or low-side switch configurations without avalanche breakdown.
R_DS(ON)	4 mΩ @ V_GS = 10 V - Enables ≤0.35 W conduction loss at 90 A, critical for 12 V input DC-DC stages.
I_D (continuous)	87 A @ T_C = +25°C - Supports high-current POL applications when mounted on ≥1-inch² 2 oz copper thermal pad.
Q_g (4.5 V)	21.1 nC - Determines gate driver power requirement and switching loss in 300–1000 kHz PWM designs.
R_θJC	3.3°C/W - Allows junction temperature rise of only 33°C at 10 W dissipation, simplifying thermal design.
Q_RR	39.5 nC - Quantifies energy loss during body diode commutation; impacts efficiency in hard-switched synchronous rectifiers.
V_GS(TH)	1.6 V (typ) - Ensures reliable turn-on with standard 3.3 V microcontroller GPIO, reducing need for dedicated gate drivers.

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad (pins 1–4 and 5–8 are source terminals; pin 6 is gate; pins 7 and 8 are drain).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source (S)	Four parallel source connections reduce bond wire inductance and improve current sharing in high-frequency switching.
5, 7, 8	Drain (D)	Three drain terminals-including large exposed pad-provide low-inductance, high-current return path to PCB ground plane.
6	Gate (G)	Single gate input with 2.12 Ω intrinsic gate resistance-enables stable turn-on without external gate resistor in most 500 kHz designs.

Key Features

Feature	Design Value
Low R_DS(ON) at 4.5 V	5.5 mΩ - Delivers <0.5 W conduction loss at 10 A in 5 V gate-drive systems, enabling efficient USB PD or PoE power switches.
Thermally optimized package	33% smaller footprint than SO-8 - Reduces PCB area by >65 mm², allowing denser multi-phase VRM layouts in thin client or SSD power modules.
Fast body diode recovery	t_RR = 27.6 ns - Minimizes shoot-through risk and reduces EMI in synchronous rectification, especially below 500 kHz.
Lead-free & green construction	Halogen- and antimony-free (<900 ppm Br+Cl, <1000 ppm Sb) - Meets IPC-1752A Class 3 material declarations for automotive and industrial end equipment.

Applications

LED Backlight Driver

Server VRM High-Side Switch

Use Scenario: Driving 4–8 series white LEDs in notebook displays using boost converter topology with PWM dimming.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch handling peak currents up to 63 A at 100–500 kHz switching frequency.

Use Value: 4 mΩ R_DS(ON) limits I²R loss to <0.16 W at 20 A, improving backlight efficiency by ≥1.2% versus SO-8 alternatives.

Use Scenario: High-current phase-leg switch in 48 V → 12 V intermediate bus converter for AI accelerator cards.

IC Role / Device Role / Timing Role: High-side power FET in interleaved buck stage operating at 300 kHz with 50 ns dead-time control.

Use Value: 3.3°C/W R_θJC enables 45 W dissipation with <10°C ΔT over ambient, eliminating need for forced air cooling in 1U chassis.

USB-C PD Power Path

Industrial PLC Output Module

Use Scenario: Bidirectional 20 V/5 A power path switch enabling sink/source capability in portable battery-powered instruments.

IC Role / Device Role / Timing Role: Dual-function switch managing load disconnect and reverse-current blocking with body diode conduction during fault recovery.

Use Value: 39.5 nC Q_RR and 0.8 V V_SD minimize cross-conduction loss during direction switching, reducing thermal stress during hot-plug events.

Use Scenario: Solid-state replacement for electromechanical relays in 24 V DC output modules controlling solenoids and valves.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated overcurrent detection and thermal shutdown coordination via controller interface.

Use Value: 120 A pulsed drain rating supports 10× inrush current of 24 V solenoids, eliminating need for external snubbers or timing delays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT43M8LPS-13	Same die, PowerDI5060-8 package - larger footprint, 2.5°C/W R_θJC, 105 A I_D.	Better thermal performance but occupies 2.3× board area; suited for high-reliability industrial SMPS where space is secondary.	Select when junction temperature must stay <110°C under 40 W sustained load and PCB layout allows larger pad.
SI7157DP-T1-GE3	40 V, 3.8 mΩ @ 10 V, but 30 A I_D rating and SO-8 package - higher R_θJA (62°C/W).	Limited to ≤30 A continuous loads; requires external gate driver for 3.3 V logic due to 2.5 V V_GS(TH) min.	Choose only for legacy SO-8 footprints where redesign is prohibited and peak current stays below 25 A.

Compared with DMT43M8LFV-13, DMT43M8LPS-13 trades board area for superior thermal headroom, while SI7157DP-T1-GE3 sacrifices current capacity and drive simplicity to maintain legacy packaging-making the DMT43M8LFV-13 optimal for new compact, high-current 3.3 V–driven designs.

Availability

DMT43M8LFV-13 is available at Aetrix Electronics and suitable for LED backlighting, server VRM power stages, and USB-C PD power path management requiring stable component supply across production ramps and long-life industrial programs.

Supply support for DMT43M8LFV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.

This MOSFET belongs to Diodes' PowerDI® trench-MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing, consumer, and industrial power supplies.

FAQ

What is the maximum safe operating temperature for DMT43M8LFV-13?

The device has a rated junction temperature range of –55°C to +150°C. Under continuous operation with 87 A drain current, thermal design must ensure T_J remains ≤150°C-achievable with ≥1-inch² 2 oz copper thermal pad and ≤3.3°C/W system-level thermal resistance from junction to ambient.

Can DMT43M8LFV-13 be driven directly from a 3.3 V microcontroller GPIO?

Yes. With a typical V_GS(TH) of 1.6 V and max of 2.5 V, the MOSFET fully enhances at 3.3 V gate drive, delivering ≤5.5 mΩ R_DS(ON). No level shifter is required, though a 10 Ω series gate resistor is recommended to dampen ringing in layouts with >10 nH source inductance.

Does DMT43M8LFV-13 support synchronous rectification in buck converters?

Yes. Its low Q_RR (39.5 nC), fast t_RR (27.6 ns), and low V_SD (0.8 V typ) make it suitable as a synchronous rectifier. When paired with a controller supporting adaptive dead-time, it achieves >95% efficiency in 12 V → 3.3 V buck stages at 20 A output.

How does the PowerDI3333-8 (Type UX) package improve thermal performance over SO-8?

It features an exposed drain pad soldered directly to PCB copper, reducing R_θJC to 3.3°C/W versus ~60°C/W for SO-8. This lowers junction temperature rise by >80% at identical power dissipation, enabling 45.4 W continuous operation versus ~3 W for SO-8 without heatsinking.

DMT43M8LFV-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3213 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI3333-8 (Type UX)

DMT43M8LFV-13 FAQ

1.How can I place an order for DMT43M8LFV-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT43M8LFV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT43M8LFV-13 reliable?

The price and inventory of DMT43M8LFV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT43M8LFV-13 is usually 5 days.

3.What payment methods are accepted for DMT43M8LFV-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT43M8LFV-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT43M8LFV-13?

DMT43M8LFV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT43M8LFV-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT43M8LFV-13?

For technical support, including DMT43M8LFV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT43M8LFV-13 requirements.

6.How does Aetrix verify that DMT43M8LFV-13 is sourced from the original manufacturer or authorized distributors?

All DMT43M8LFV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT43M8LFV-13 meets industry standards.

7.What is the process for return or replacement of DMT43M8LFV-13?

All DMT43M8LFV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT43M8LFV-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT43M8LFV-13 part is unused and in its original packaging.

Return procedure for DMT43M8LFV-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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