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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT43M8LFV-7

Name: DMT43M8LFV-7
Brand: Diodes Incorporated
SKU: DMT43M8LFV-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT43M8LFV-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT43M8LFV-7.pdf

Description:: MOSFET N-CH 40V 87A POWERDI3333

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Product details

Overview

DMT43M8LFV-7 from Diodes Incorporated is a 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 (Type UX) package, featuring 4 mΩ R_DS(ON) @ V_GS = 10 V, 87 A continuous drain current at T_C = +25°C, and 3.3°C/W thermal resistance from junction to case - deployed in high-density DC-DC converters for notebook GPU power rails.

For engineers reviewing the DMT43M8LFV-7 datasheet, DMT43M8LFV-7 pinout, DMT43M8LFV-7 application, or DMT43M8LFV-7 equivalent, key selection criteria include low R_DS(ON) at 4.5 V gate drive, thermally efficient exposed-drain package, body diode recovery performance (t_RR = 27.6 ns), and SOA compliance for pulsed load switching in compact power stages.

Technical Context

This MOSFET uses trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching speed (t_D(ON) = 5.5 ns, t_D(OFF) = 24.9 ns) and controlled gate charge (Q_g = 44.4 nC @ 10 V). Its optimized Cr_ss/C_iss ratio supports stable operation in synchronous buck topologies with adaptive gate drive.

The device integrates a robust body diode with V_SD = 0.8–1.0 V @ I_S = 20 A and Q_RR = 39.5 nC, enabling efficient reverse recovery in high-frequency hard-switched converters. Thermal design leverages the exposed drain pad for direct PCB copper thermal conduction, achieving R_θJC = 3.3°C/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V/24 V input bus applications with 2× safety margin
R_DS(ON) max	4 mΩ @ V_GS = 10 V - Enables ≤0.8 W conduction loss at 20 A in high-current power stages
I_D continuous	87 A @ T_C = +25°C - Supports >60 A sustained output in dual-phase VRMs with derating
Q_g	44.4 nC @ V_GS = 10 V - Determines gate driver current requirement (~1.5 A peak for 30 ns turn-on)
t_RR	27.6 ns - Limits reverse recovery energy loss and EMI in 500 kHz–1 MHz synchronous rectification
R_θJC	3.3°C/W - Allows direct thermal coupling to inner-layer copper planes for <10°C junction rise at 40 W dissipation

Pinout & Package

Package: PowerDI3333-8 (Type UX), surface-mount, thermally enhanced with exposed drain pad (pins 1–4 and 5–8 are source/drain terminals respectively; gate on pin 7).

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Source	Common low-side return path; electrically and thermally tied to exposed drain pad via internal substrate
5, 6, 7, 8	Drain	Main power output node; connected to large copper pour for heat extraction and current handling
7	Gate	Control input requiring <44.4 nC charge; isolated from drain by Cr_ss = 55 pF to limit Miller effect

Key Features

Feature	Design Value
Ultra-low R_DS(ON) at 4.5 V	5.5 mΩ enables 95%+ efficiency in 5 V-input POL converters without gate boosting
PowerDI3333-8 footprint	33% board area vs SO-8 allows denser multi-phase CPU/GPU VRMs in thin-profile laptops
Exposed drain thermal pad	Enables 45.4 W power dissipation at T_C = +25°C - double typical SO-8 rating
Halogen- and antimony-free	<900 ppm Br/Cl, <1000 ppm Sb - meets IPC-1752A Class 3 environmental compliance

Applications

GPU Core Power Delivery

USB-C PD Sink Converter

Use Scenario: High-current, space-constrained 0.7–1.2 V rail for discrete graphics processors in ultrabooks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 2-phase interleaved buck converter operating at 1 MHz.

Use Value: 4 mΩ R_DS(ON) reduces conduction loss by 38% vs comparable 6 mΩ MOSFETs, lowering die temperature by 12°C at 50 A.

Use Scenario: Secondary-side switch in 20 V–5 V buck converter for USB-C power delivery sink circuits.

IC Role / Device Role / Timing Role: Main power switch with 4.5 V gate drive compatibility for controller ICs without bootstrap capability.

Use Value: 5.5 mΩ @ 4.5 V ensures <1.4 W loss at 18 A, meeting thermal limits in sealed adapter enclosures.

Server DDR5 Memory Regulator

Industrial PLC I/O Power Stage

Use Scenario: Point-of-load regulator supplying 1.1 V @ 40 A to DDR5 memory modules in edge servers.

IC Role / Device Role / Timing Role: High-current, low-R_DS(ON) switch in multiphase buck with 300 kHz–1 MHz variable frequency control.

Use Value: 3.3°C/W R_θJC enables direct thermal interface to heatsink-equipped PCB layers, sustaining 40 A continuous without forced air.

Use Scenario: 24 V DC input to 5 V/3.3 V logic supply in programmable logic controller backplane.

IC Role / Device Role / Timing Role: Primary switching element in ruggedized buck converter with 100% duty cycle capability during brownout.

Use Value: 14 A avalanche current rating (I_AS) and 98 mJ E_AS withstand transient inductive kickback from solenoid drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMTH4007LPS-13	40 V, 3.6 mΩ @ 10 V, PowerDI5060-8 package (larger footprint, higher R_θJA)	Better R_DS(ON) but requires 2.5× board area; suited for lower-frequency, higher-power industrial supplies	Choose when thermal budget permits larger layout and peak efficiency >96% is prioritized over density
SI7157DP-T1-GE3	40 V, 4.5 mΩ @ 10 V, PowerPAK® SO-8 package (no exposed drain, R_θJC = 4.5°C/W)	Compatible pinout but 36% higher junction-to-case thermal resistance; limited to ≤35 A continuous	Choose only if legacy SO-8 footprint must be retained and thermal headroom exceeds 15°C

Compared with DMTH4007LPS-13 and SI7157DP-T1-GE3, DMT43M8LFV-7 uniquely balances ultra-low R_DS(ON), minimal footprint, and superior thermal extraction - making it optimal for space- and thermally constrained high-frequency POL designs where board area is premium.

Availability

DMT43M8LFV-7 is available at Aetrix Electronics and suitable for GPU core power delivery, USB-C PD sink converters, and server DDR5 memory regulators requiring stable component supply across high-volume production cycles.

Supply support for DMT43M8LFV-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-efficiency power management solutions for computing, industrial, and consumer markets.

This MOSFET belongs to Diodes' PowerDI® trench-MOSFET product line, engineered specifically for high-current, high-frequency DC-DC conversion in space-constrained end equipment such as ultraportable notebooks and modular server PSUs.

FAQ

What is the maximum allowable gate-source voltage for DMT43M8LFV-7?

The absolute maximum V_GS rating is ±20 V per the datasheet. Operation beyond ±12 V risks oxide breakdown; recommended gate drive is 4.5 V to 10 V for optimal R_DS(ON) vs. switching loss trade-off. Gate protection resistors ≥10 Ω are advised to damp ringing during fast transitions.

Can DMT43M8LFV-7 be used in synchronous rectification without external Schottky diodes?

Yes - its integrated body diode has t_RR = 27.6 ns and Q_RR = 39.5 nC, enabling clean commutation in synchronous buck converters up to 1 MHz. However, dead-time must be precisely controlled (≥50 ns) to avoid shoot-through, especially below 5 V input.

How does the PowerDI3333-8 (Type UX) package improve thermal performance over SO-8?

It features an exposed drain pad soldered directly to PCB copper, reducing R_θJC to 3.3°C/W versus ~6°C/W for standard SO-8. This allows 45.4 W power dissipation at T_C = +25°C - nearly double - and lowers junction temperature by 18°C at 40 A compared to SO-8 equivalents.

Is DMT43M8LFV-7 suitable for automotive applications per AEC-Q101?

No - DMT43M8LFV-7 is not AEC-Q101 qualified. It is rated for industrial temperature range (−55°C to +150°C), but lacks automotive-specific stress testing, failure rate reporting, and PPAP documentation. For automotive use, Diodes' AEC-Q101-qualified DMT4007LPS series is recommended.

DMT43M8LFV-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 87A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 44.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3213 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PowerDI3333-8 (Type UX)

DMT43M8LFV-7 FAQ

1.How can I place an order for DMT43M8LFV-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT43M8LFV-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT43M8LFV-7 reliable?

The price and inventory of DMT43M8LFV-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT43M8LFV-7 is usually 5 days.

3.What payment methods are accepted for DMT43M8LFV-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT43M8LFV-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT43M8LFV-7?

DMT43M8LFV-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT43M8LFV-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT43M8LFV-7?

For technical support, including DMT43M8LFV-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT43M8LFV-7 requirements.

6.How does Aetrix verify that DMT43M8LFV-7 is sourced from the original manufacturer or authorized distributors?

All DMT43M8LFV-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT43M8LFV-7 meets industry standards.

7.What is the process for return or replacement of DMT43M8LFV-7?

All DMT43M8LFV-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT43M8LFV-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT43M8LFV-7 part is unused and in its original packaging.

Return procedure for DMT43M8LFV-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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