My Inquiry
My Account
Diodes Incorporated DMT47M2LDV-13
- Part No.:
- DMT47M2LDV-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FET, MOSFET Arrays
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT47M2LDV-13.pdf
- Description:
- MOSFET 2N-CH 40V 11.9A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:7,547
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMT47M2LDV-13 from Diodes Incorporated is a dual 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 10.8mΩ RDS(ON) @ VGS=10V, 30.2A continuous drain current at TC=+25°C, and AEC-Q101 qualification for automotive-grade reliability - deployed in high-efficiency DC-DC converters and motor control stages.
For engineers reviewing the DMT47M2LDV-13 datasheet, DMT47M2LDV-13 pinout, DMT47M2LDV-13 application, or DMT47M2LDV-13 equivalent, key selection criteria include dual-channel RDS(ON) matching, 100% UIS-rated ruggedness, thermal resistance (RθJC = 8.43°C/W), and PowerDI3333-8 footprint compatibility with high-density power layouts.
Technical Context
This dual N-channel MOSFET integrates two matched silicon die in a single exposed-drain PowerDI3333-8 package, enabling synchronous rectification or half-bridge topologies without external paralleling. Its gate threshold voltage (1.2–2.3V) supports 3.3V/5V logic-level drive, while low input capacitance (Ciss = 891pF) and fast switching (tr = 5.41ns) reduce switching losses in high-frequency converters.
The device's 100% unclamped inductive switching (UIS) rating (IAS = 22.1A, EAS = 24.4mJ) and robust body diode (tRR = 56.6ns, QRR = 40.0nC) ensure reliable operation under hard-switching and reverse-recovery stress in motor drive and buck converter freewheeling paths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40V - Maximum blocking voltage for 12V/24V automotive and industrial bus applications. |
| RDS(ON) | 10.8mΩ @ VGS=10V - Enables ≤0.65W conduction loss at 20A, critical for thermally constrained PCBs. |
| ID (continuous) | 30.2A @ TC=+25°C - Supports high-current output stages without external heatsinking when mounted on 2oz copper. |
| Qg | 14.0nC @ VGS=10V - Determines gate driver power requirement and switching speed in 500kHz–1MHz converters. |
| RθJC | 8.43°C/W - Enables direct thermal coupling to PCB copper pour or heatsink for junction temperature control below 150°C. |
| trr | 56.6ns - Limits reverse-recovery energy loss during synchronous rectification in buck converters. |
Pinout & Package
Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with exposed drain pad (D1/D2). Molded green compound, UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain of Channel 1 | Primary high-side or low-side switch node; electrically tied to exposed drain pad for thermal and current path integrity. |
| Pin 2 (S1) | Source of Channel 1 | Return path for Channel 1; requires Kelvin connection for accurate current sensing in precision control loops. |
| Pin 3 (G1) | Gate of Channel 1 | Logic-level input (VGS(th) = 1.4V typ); isolated routing required to prevent noise coupling in high-dv/dt environments. |
| Pin 4 (D2) | Drain of Channel 2 | Independent high-current node for dual-phase or complementary switching; shares thermal pad with D1. |
| Pin 5 (S2) | Source of Channel 2 | Separate return path enables independent current monitoring or floating-source configurations (e.g., high-side drive). |
| Pin 6 (G2) | Gate of Channel 2 | Matched gate characteristics to G1 ensure synchronized turn-on/turn-off timing between channels. |
| Pads 7–8 (Exposed Drain) | Common Drain Thermal Pad | Primary thermal interface to PCB; must be soldered to ≥1in² 2oz copper for rated 14.8W power dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness up to 22.1A/24.4mJ without derating - eliminates need for external snubbers in inductive load switching. |
| AEC-Q101 qualified | Validated for automotive temperature range (−55°C to +150°C) and mechanical stress - suitable for engine control and ADAS power stages. |
| Low RDS(ON) @ 4.5V | 15mΩ at VGS=4.5V enables efficient operation with standard 5V microcontroller GPIOs without level-shifting. |
| Green, halogen-free construction | Meets RoHS 3 and JEDEC J-STD-020 MSL Level 1 - supports lead-free reflow and long-term environmental compliance. |
| Matched dual-channel parameters | Typical RDS(ON) mismatch <5% ensures balanced current sharing in parallel or phase-split configurations. |
Applications
| Motor Control | DC-DC Converters |
|---|---|
|
Use Scenario: Brushless DC (BLDC) motor gate drive in HVAC blowers and power tools. IC Role / Device Role / Timing Role: Dual-channel low-side switch controlling phase winding current commutation at 20–50kHz PWM frequency. Use Value: Low RDS(ON) and fast tf (8.53ns) minimize conduction and switching losses, extending battery runtime by >8% vs. legacy 20mΩ MOSFETs. |
Use Scenario: Synchronous rectification in 12V-to-3.3V/5V buck converters for infotainment systems. IC Role / Device Role / Timing Role: Dual N-channel pair replacing Schottky diodes in secondary-side rectification with gate-driven timing alignment. Use Value: 0.9V VSD body diode forward drop and 56.6ns tRR reduce reverse-recovery loss, improving efficiency by 2.1% at 10A load. |
| Power Management Functions | Automotive Body Control Modules |
|
Use Scenario: Load switching for LED lighting and solenoid drivers in industrial PLC I/O modules. IC Role / Device Role / Timing Role: High-current, logic-level controlled power switch with integrated UIS protection for inductive load transients. Use Value: 120A pulsed drain rating and 100% production UIS testing eliminate external TVS clamping, reducing BOM count by one component. |
Use Scenario: Window lift and seat adjustment motor H-bridge drivers in passenger vehicles. IC Role / Device Role / Timing Role: AEC-Q101-qualified dual MOSFET providing bidirectional current control with thermal shutdown margin up to +125°C ambient. Use Value: RθJC = 8.43°C/W and −55°C to +150°C operating range ensure stable operation under hood temperatures without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT47M2LDVQ-13 | Identical silicon and package, but AEC-Q101 certified with full automotive PPAP documentation and extended test coverage. | Required for safety-critical automotive ECUs; not needed for industrial or consumer designs. | Select DMT47M2LDVQ-13 only when automotive qualification traceability (e.g., lot-level test reports) is contractually mandated. |
| DMTH4007LPS-13 | Single-channel 40V MOSFET (7.5mΩ @ 10V) in PowerDI5060 package; higher RDS(ON) per channel but larger thermal pad (RθJC = 3.5°C/W). | Suitable for space-tolerant layouts where dual-channel integration is unnecessary and thermal headroom is limited. | Choose DMTH4007LPS-13 if board area allows separate devices and junction temperature must stay below 130°C at 35A continuous. |
Compared with DMT47M2LDV-13, the DMT47M2LDVQ-13 adds automotive compliance overhead without electrical benefit, while DMTH4007LPS-13 trades integration density for superior thermal performance - making the original optimal for compact, dual-phase 20–30A power stages.
Availability
DMT47M2LDV-13 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and automotive body electronics requiring stable component supply across industrial and Tier-1 automotive programs.
Supply support for DMT47M2LDV-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for automotive, industrial, and computing markets.
The DMT47M2LDV belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, space-constrained power conversion where dual-channel integration, ruggedness, and AEC-Q101 readiness are mandatory.
FAQ
What is the maximum safe operating temperature for DMT47M2LDV-13?
The device is rated for junction temperature (TJ) from −55°C to +150°C. With RθJC = 8.43°C/W and a typical PCB copper thermal mass, sustained operation at 14.8W dissipation requires case temperature (TC) ≤ 100°C to maintain TJ ≤ 150°C. Derating is necessary above 100°C ambient unless active cooling is applied.
Can DMT47M2LDV-13 be used in a synchronous buck converter's high-side position?
No - it is a dual N-channel MOSFET with no integrated bootstrap circuitry or level-shifting capability. It functions only as a low-side or synchronous rectifier switch. For high-side use, a dedicated high-side driver IC (e.g., Diodes AP2132) and external gate bias network are required.
Is the PowerDI3333-8 package compatible with standard reflow profiles?
Yes - the package is MSL Level 1 and fully compatible with IPC/JEDEC J-STD-020 Class 3 reflow profiles. Peak temperature must not exceed 260°C for ≤30 seconds, and the exposed drain pad must be fully soldered to ensure thermal and mechanical reliability.
Does DMT47M2LDV-13 support 3.3V logic-level gate drive?
Yes - its gate threshold voltage (VGS(TH)) is 1.2–2.3V, and RDS(ON) is specified down to 15mΩ at VGS = 4.5V. At 3.3V, typical RDS(ON) rises to ~22mΩ, supporting moderate-current (≤12A) switching with acceptable conduction loss in non-critical applications.
DMT47M2LDV-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 40V
- Current - Continuous Drain (Id) @ 25°C:
- 11.9A (Ta), 30.2A (Tc)
- Rds On (Max) @ Id, Vgs:
- 10.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 891pF @ 20V
- Power - Max:
- 2.34W (Ta), 14.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI3333-8 (Type UXC)
DMT47M2LDV-13 FAQ
1.How can I place an order for DMT47M2LDV-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT47M2LDV-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT47M2LDV-13 reliable?
The price and inventory of DMT47M2LDV-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT47M2LDV-13 is usually 5 days.
3.What payment methods are accepted for DMT47M2LDV-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT47M2LDV-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT47M2LDV-13?
DMT47M2LDV-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT47M2LDV-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT47M2LDV-13?
For technical support, including DMT47M2LDV-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT47M2LDV-13 requirements.
6.How does Aetrix verify that DMT47M2LDV-13 is sourced from the original manufacturer or authorized distributors?
All DMT47M2LDV-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT47M2LDV-13 meets industry standards.
7.What is the process for return or replacement of DMT47M2LDV-13?
All DMT47M2LDV-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT47M2LDV-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT47M2LDV-13 part is unused and in its original packaging.
Return procedure for DMT47M2LDV-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMT47M2LDV-13 Tags
-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage
-
2N7002DW-7-F
Diodes Incorporated
-
SSM6L56FE,LM
Toshiba Semiconductor and Storage
-
SSM6N37FU,LF
Toshiba Semiconductor and Storage
-
2N7002DWH6327XTSA1
Infineon Technologies
-
2N7002BKS,115
Nexperia USA Inc.
-
DMG1016UDW-7
Diodes Incorporated
-
UM6K33NTN
Rohm Semiconductor
-
DMG6602SVT-7
Diodes Incorporated
-
EM6K34T2CR
Rohm Semiconductor
-
UM6K34NTCN
Rohm Semiconductor
-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
