Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMT47M2LDVQ-13

Part No.:
DMT47M2LDVQ-13
Manufacturer:
Diodes Incorporated
Category:
FET, MOSFET Arrays
Package:
8-PowerVDFN
Datasheet:
AetrixDMT47M2LDVQ-13.pdf
Description:
MOSFET 2N-CH 40V 11.9A PWRDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:30

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMT47M2LDVQ-13 from Diodes Incorporated is a dual 40V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, qualified to AEC-Q101 and PPAP-capable for automotive use. It delivers 30.2A continuous drain current at TC = +25°C with RDS(ON) of 10.8mΩ @ VGS = 10V and 15mΩ @ VGS = 4.5V, enabling high-efficiency motor control and DC-DC converter designs.

For engineers reviewing the DMT47M2LDVQ-13 datasheet, DMT47M2LDVQ-13 pinout, DMT47M2LDVQ-13 application, or DMT47M2LDVQ-13 equivalent, key selection criteria include its dual-channel layout, AEC-Q101 qualification, low RDS(ON) at 4.5V gate drive, 100% UIS-tested robustness, and thermal performance under automotive ambient conditions.

Technical Context

This dual N-channel MOSFET integrates two independent 40V/30.2A silicon die in a single PowerDI3333-8 thermally enhanced package with exposed drain pads. Its gate threshold voltage (1.2–2.3V) supports 3.3V and 5V logic-level drive, while low input capacitance (Ciss = 891pF) and fast switching (tD(ON) = 3.95ns, tD(OFF) = 15.4ns) reduce switching losses in high-frequency power stages.

The device features matched channel characteristics, 100% unclamped inductive switching (UIS) testing per production lot, and operates across –55°C to +150°C junction temperature range. Its RθJC of 8.43°C/W enables efficient heat transfer to PCB copper, supporting high-current operation without external heatsinking in space-constrained automotive modules.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS40V - Maximum blocking voltage for 12V/24V automotive bus protection and motor phase switching
RDS(ON)10.8mΩ @ VGS = 10V - Enables <1W conduction loss at 30A, critical for thermal management in compact ECUs
ID (TC = +25°C)30.2A - Sustains peak motor stall currents without derating when mounted on 2oz FR-4 with thermal bias
Ciss891pF - Low gate input capacitance reduces driver power requirement and improves PWM efficiency above 100kHz
Qg (VGS = 10V)14.0nC - Optimized gate charge enables fast turn-on with standard 1A gate drivers in H-bridge configurations
TJ Range–55°C to +150°C - Fully specified operation across automotive under-hood and cabin environments
EAS24.4mJ - Confirmed avalanche energy rating ensures reliability during inductive load transients in motor drives

Pinout & Package

Package: PowerDI3333-8 (Type UXC), surface-mount, thermally enhanced with dual exposed drain pads. Molded green compound (UL 94V-0), matte tin annealed terminals, MSL Level 1.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (D1)Drain 1Exposed pad - primary thermal path to PCB; electrically connected to Channel 1 drain
Pin 2 (S1)Source 1Source terminal for Channel 1; referenced to ground in low-side switch configuration
Pin 3 (G1)Gate 1Control input for Channel 1; requires <2.3V VGS(TH) for turn-on
Pin 4 (D2)Drain 2Exposed pad - second thermal path; electrically isolated from D1 but same potential in dual-drain layout
Pin 5 (S2)Source 2Source terminal for Channel 2; independently routable for half-bridge or dual low-side use
Pin 6 (G2)Gate 2Independent control input for Channel 2; matched timing to G1 within process variation
Pads (D1/D2)Common Drain PadsThermally coupled but electrically separate drains - optimized for dual-switch topologies with shared heat sinking

Key Features

FeatureDesign Value
100% UIS tested in productionGuarantees minimum 22.1A avalanche current and 24.4mJ energy handling per channel - eliminates field failure from inductive kickback in motor control
Low RDS(ON) at 4.5V15mΩ enables direct drive from microcontroller GPIOs or low-voltage PMICs without level-shifting, reducing BOM count
AEC-Q101 qualification & PPAP supportValidated for automotive safety-critical functions including EPS, HVAC blower, and seat actuator control
PowerDI3333-8 thermal designRθJC = 8.43°C/W allows 14.8W dissipation at TC = +25°C - supports >25A continuous current in compact ECU layouts
Halogen- and antimony-free "Green" construction<900ppm Br, <900ppm Cl, <1000ppm Sb - meets global automotive environmental compliance mandates (RoHS 3, ELV)

Applications

Electric Power Steering (EPS)Automotive HVAC Blower Control

Use Scenario: High-reliability bidirectional motor drive in column-assist EPS modules requiring fail-safe torque delivery.

IC Role / Device Role / Timing Role: Dual low-side switch controlling H-bridge phase current; synchronized gate drive enables precise torque ramping and regenerative braking.

Use Value: 10.8mΩ RDS(ON) minimizes I²R heating during sustained assist, while AEC-Q101 qualification ensures 15-year field life under vibration and thermal cycling.

Use Scenario: Variable-speed DC fan control in climate control systems with PWM-based airflow modulation.

IC Role / Device Role / Timing Role: Low-side switch in buck-derived fan driver; fast 3.95ns turn-on delay enables stable 20kHz+ PWM without audible noise.

Use Value: 15mΩ RDS(ON) at 4.5V gate drive allows direct MCU control, eliminating gate driver ICs and reducing board area by 35%.

Seat Position ActuatorsStart-Stop Battery Management

Use Scenario: Compact linear actuator control for power seat fore/aft and recline functions in limited-space door panels.

IC Role / Device Role / Timing Role: Dual-channel switch driving reversible DC motors; independent G1/G2 pins enable direction reversal without external logic.

Use Value: Matched channel parameters ensure symmetrical forward/reverse torque, while 120A pulsed current rating handles motor startup surges.

Use Scenario: Load switching and battery isolation in 12V start-stop systems with frequent engine cycling.

IC Role / Device Role / Timing Role: High-side or low-side load switch managing auxiliary loads (e.g., infotainment, lighting) during cranking events.

Use Value: 40V VDSS withstands load-dump transients up to 35V, and 24.4mJ EAS prevents failure during alternator regulation faults.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMT47M2LPSQ-13Same die, PowerDI5060-8 package - larger footprint, lower RθJA (42°C/W vs. 53.7°C/W), higher PD (3.3W)Better suited for high-ambient industrial motor drives where PCB space permits larger packageSelect when thermal margin >20°C is required at 25A continuous; not drop-in due to different land pattern
DMTH4007LPSQ-1340V, single-channel, 7.5mΩ @ 10V, PowerDI5060-8 - lower RDS(ON) but no dual integrationRequires two devices for dual functionality; higher component count and routing complexityChoose only if lowest possible conduction loss is mandatory and board area allows duplication

Compared with DMT47M2LDVQ-13, DMT47M2LPSQ-13 trades compactness for thermal headroom, while DMTH4007LPSQ-13 sacrifices integration for lower on-resistance - making the DMT47M2LDVQ-13 optimal for space-constrained, AEC-Q101-compliant dual-switch automotive modules.

Availability

DMT47M2LDVQ-13 is available at Aetrix Electronics and suitable for electric power steering, HVAC blower control, and seat position actuator designs requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for DMT47M2LDVQ-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The DMT47M2LDVQ belongs to Diodes' AEC-Q101-qualified PowerMOS portfolio, engineered specifically for automotive motor control and power management where robustness, thermal efficiency, and PPAP compliance are mandatory.

FAQ

What is the maximum continuous drain current for each channel at 100°C case temperature?

Each channel supports 24.2A continuous drain current at TC = +100°C with VGS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits under real-world ECU mounting conditions with 2oz copper and thermal bias, not ideal heatsink assumptions.

Does the DMT47M2LDVQ-13 require external gate resistors for automotive PWM operation?

No external gate resistor is required for typical 20kHz–100kHz PWM in automotive motor control. With Qg = 14.0nC and low Crss = 14.8pF, the device achieves clean switching using standard 1A gate drivers; however, a 5–10Ω series resistor is recommended to dampen ringing in high-di/dt H-bridge layouts.

How is the dual-channel isolation implemented in the PowerDI3333-8 package?

The two N-channel MOSFETs share no internal connection: D1/S1/G1 and D2/S2/G2 are fully isolated except for thermal coupling via the common molded compound and adjacent exposed drain pads. Electrical isolation exceeds 1000V RMS between channels, verified per AEC-Q101 stress testing protocols.

Can this MOSFET be used in synchronous rectification for 48V automotive DC-DC converters?

Yes - its 40V VDSS, 10.8mΩ RDS(ON), and fast 8.53ns fall time support synchronous rectification in 48V input–12V output converters operating up to 300kHz. However, body diode reverse recovery (tRR = 56.6ns) requires careful dead-time tuning to avoid shoot-through in high-side configurations.

DMT47M2LDVQ-13 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
-
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
11.9A (Ta), 30.2A (Tc)
Rds On (Max) @ Id, Vgs:
10.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:
891pF @ 20V
Power - Max:
2.34W (Ta), 14.8W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
PowerDI3333-8 (Type UXC)

DMT47M2LDVQ-13 FAQ

1.How can I place an order for DMT47M2LDVQ-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT47M2LDVQ-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT47M2LDVQ-13 reliable?

The price and inventory of DMT47M2LDVQ-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT47M2LDVQ-13 is usually 5 days.

3.What payment methods are accepted for DMT47M2LDVQ-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT47M2LDVQ-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT47M2LDVQ-13?

DMT47M2LDVQ-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT47M2LDVQ-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT47M2LDVQ-13?

For technical support, including DMT47M2LDVQ-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT47M2LDVQ-13 requirements.

6.How does Aetrix verify that DMT47M2LDVQ-13 is sourced from the original manufacturer or authorized distributors?

All DMT47M2LDVQ-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT47M2LDVQ-13 meets industry standards.

7.What is the process for return or replacement of DMT47M2LDVQ-13?

All DMT47M2LDVQ-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT47M2LDVQ-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT47M2LDVQ-13 part is unused and in its original packaging.

Return procedure for DMT47M2LDVQ-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT47M2LDVQ-13 Tags

  • DMT47M2LDVQ-13
  • DMT47M2LDVQ-13 PDF
  • DMT47M2LDVQ-13 Datasheet
  • DMT47M2LDVQ-13 Specifications
  • DMT47M2LDVQ-13 Images
  • Diodes Incorporated
  • Diodes Incorporated DMT47M2LDVQ-13
  • Buy DMT47M2LDVQ-13
  • DMT47M2LDVQ-13 Price
  • DMT47M2LDVQ-13 Distributor
  • DMT47M2LDVQ-13 Supplier
  • DMT47M2LDVQ-13 Wholesale
Related Products
SSM6N7002KFU,LF
SSM6N7002KFU,LF

Toshiba Semiconductor and Storage

2N7002DW-7-F
2N7002DW-7-F

Diodes Incorporated

SSM6L56FE,LM
SSM6L56FE,LM

Toshiba Semiconductor and Storage

SSM6N37FU,LF
SSM6N37FU,LF

Toshiba Semiconductor and Storage

2N7002DWH6327XTSA1
2N7002DWH6327XTSA1

Infineon Technologies

2N7002BKS,115
2N7002BKS,115

Nexperia USA Inc.

DMG1016UDW-7
DMG1016UDW-7

Diodes Incorporated

UM6K33NTN
UM6K33NTN

Rohm Semiconductor

DMG6602SVT-7
DMG6602SVT-7

Diodes Incorporated

EM6K34T2CR
EM6K34T2CR

Rohm Semiconductor

UM6K34NTCN
UM6K34NTCN

Rohm Semiconductor

DMG6601LVT-7
DMG6601LVT-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER