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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT47M2SFVW-13

Name: DMT47M2SFVW-13
Brand: Diodes Incorporated
SKU: DMT47M2SFVW-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT47M2SFVW-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT47M2SFVW-13.pdf

Description:: MOSFET N-CH 40V PWRDI3333

Quantity:: RFQ Add To RFQ list

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Product details

Overview

DMT47M2SFVW-13 from Diodes Incorporated is a 40V, 49.1A N-channel enhancement-mode MOSFET in PowerDI3333-8 package, featuring 7.5mΩ R_DS(ON) at V_GS = 10V, 100% production-tested UIS, and wettable flank terminals for automated optical inspection - deployed in high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the DMT47M2SFVW-13 datasheet, DMT47M2SFVW-13 pinout, DMT47M2SFVW-13 application, or DMT47M2SFVW-13 equivalent, key selection criteria include R_DS(ON) stability over temperature, Q_g/Q_gd ratio for switching loss optimization, thermal resistance (R_θJC = 4.61°C/W), and AEC-Q-compliant robustness for automotive-adjacent power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in synchronous buck topologies. Its 12.1nC total gate charge and 1.9nC gate-drain charge support efficient hard-switching up to 1MHz with minimal Miller-induced shoot-through risk.

The device integrates a robust body diode with 39.1ns reverse recovery time and 53.3nC Q_RR, enabling reliable freewheeling in continuous conduction mode (CCM) operation. Junction-to-case thermal path leverages an exposed drain pad for direct heatsinking, delivering 27.1W power dissipation at T_C = +25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40V - Maximum blocking voltage before avalanche onset; sets upper limit for input rail in 12V/24V industrial DC-DC stages.
R_DS(ON)	7.5mΩ @ V_GS = 10V - Confirmed on-resistance at standard gate drive; enables <1.5W conduction loss at 20A load current.
I_D (T_C = 25°C)	49.1A - Continuous drain current rating under ideal case-cooled conditions; defines maximum steady-state output capability.
Q_g	12.1nC - Total gate charge required for full turn-on; directly impacts driver IC sizing and switching energy loss.
R_θJC	4.61°C/W - Junction-to-case thermal resistance; enables accurate heatsink sizing when mounted to copper plane or thermal pad.
E_AS	30.5mJ - Single-pulse avalanche energy rating; validates ruggedness against inductive switching transients in motor drives.
t_RR	39.1ns - Body diode reverse recovery time; critical for minimizing cross-conduction loss in synchronous rectification.

Pinout & Package

Package: PowerDI3333-8/SWP (Type UX), surface-mount, thermally enhanced with exposed drain pad and wettable flank leads for solder joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7, 8 (Drain)	Power Drain / Heat Sink Node	All eight pins are internally connected to the drain terminal and exposed copper pad - provides low-inductance, high-current path and primary thermal conduction path to PCB.
Source (S1–S3)	Source Terminal / Return Path	Three dedicated source pins (pins 1, 2, 3 per bottom view) reduce source inductance and improve current sharing in high-di/dt applications.
G (Gate)	Control Input	Single gate pin (pin 4 per bottom view) - requires low-impedance driver due to 2.07Ω gate resistance and 12.1nC Q_g.

Key Features

Feature	Design Value
Wettable Flank Leads	Enables AOI-compatible solder joint verification without X-ray; eliminates manual visual inspection in high-volume automotive-qualified assembly lines.
100% UIS Production Test	Every unit validated for unclamped inductive switching robustness - ensures field reliability in motor control and solenoid drive where flyback energy must be absorbed internally.
Low Q_gd × R_DS(ON) FOM	14.25 mΩ·nC - Optimized figure-of-merit for reduced switching loss and improved efficiency in 300kHz–1MHz DC-DC converters.
AEC-Q200 Qualified Variant	Automotive-grade version (DMT47M2SFVWQ) available - confirms suitability for under-hood power management where -40°C to +125°C ambient and vibration endurance are required.
Green, Halogen-Free Construction	Meets JEDEC J-STD-020 Level 1 moisture sensitivity and RoHS 3 (2015/863/EU); supports lead-free reflow without delamination risk.

Applications

Motor Control

DC-DC Converter

Use Scenario: Brushless DC (BLDC) motor half-bridge leg in HVAC blowers and power tools.

IC Role / Device Role / Timing Role: High-side/low-side switching element handling 20–40A peak phase current with 20kHz PWM.

Use Value: 7.5mΩ R_DS(ON) and 39.1ns t_RR minimize conduction + freewheeling losses, enabling >96% efficiency at full load.

Use Scenario: Synchronous rectifier in 48V-to-12V buck converter for server VRMs and telecom power supplies.

IC Role / Device Role / Timing Role: Low-side switch operating at 500kHz with 10V gate drive and tight dead-time control.

Use Value: 12.1nC Q_g and 1.9nC Q_gd allow clean turn-off edge and reduce overlap loss versus higher-Q_gd alternatives.

Industrial Power Supply

Automotive Body Control Module

Use Scenario: Primary-side switch in isolated flyback auxiliary supply for PLC I/O modules.

IC Role / Device Role / Timing Role: 40V-rated switch managing 15A pulsed current during startup surge and short-circuit events.

Use Value: 30.5mJ E_AS withstands repeated 100μs inductive spikes without degradation - extends field lifetime beyond 10 years.

Use Scenario: Load switch for LED headlamp dimming and window lift actuation in BCM designs.

IC Role / Device Role / Timing Role: Protected high-current switch with integrated diagnostics via V_GS(TH) stability (±0.5V over -55°C to +150°C).

Use Value: Gate threshold variation <1.2V across full junction temperature range ensures consistent turn-on behavior without external bias compensation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT47M2SFVWQ	AEC-Q200 qualified variant; identical electrical specs but certified for automotive temperature cycling and vibration testing.	Required for OEM automotive body electronics; not necessary for industrial or consumer-grade systems.	Select DMT47M2SFVWQ only if AEC-Q200 compliance is mandated by program requirements.
DMTH47M2SPS-13	Same R_DS(ON) (7.5mΩ) and V_DSS (40V), but in PowerDI5060 package - larger footprint, higher R_θJA (50°C/W), no wettable flanks.	Suitable for prototyping or lower-volume boards where AOI is not enforced; less optimal for high-reliability automated assembly.	Choose DMT47M2SFVW-13 over DMTH47M2SPS-13 when board space is constrained and optical solder inspection is required.

Compared with DMT47M2SFVWQ, the -13 variant offers identical performance at lower cost and qualification overhead for non-automotive use; versus DMTH47M2SPS-13, it delivers superior thermal performance and manufacturability in volume production despite identical R_DS(ON) and voltage rating.

Availability

DMT47M2SFVW-13 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, industrial power supply, and automotive body control module applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for DMT47M2SFVW-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

This MOSFET belongs to Diodes' PowerDI® trench-MOSFET product line, engineered specifically for high-current, high-efficiency switching in compact surface-mount form factors with enhanced thermal and manufacturing robustness.

FAQ

What is the maximum continuous drain current at T_C = +70°C?

The DMT47M2SFVW-13 supports 39.2A continuous drain current when case temperature is maintained at +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PowerDI3333-8 package and must be verified using actual board-level thermal measurements under real operating conditions.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and suppress ringing during switching transitions. With 12.1nC Q_g and 2.07Ω intrinsic gate resistance, a 5–10Ω external resistor typically balances turn-on speed and EMI suppression in 300–500kHz applications without compromising driver capability.

Is the body diode suitable for synchronous rectification?

Yes - the body diode has a typical forward voltage of 0.88V at 20A and reverse recovery time of 39.1ns, making it viable for synchronous rectification in medium-frequency buck converters. However, external Schottky diodes may still be preferred in ultra-high-efficiency designs where V_F < 0.5V is critical.

Can DMT47M2SFVW-13 replace older TO-252 MOSFETs in existing layouts?

No - the PowerDI3333-8 package has different footprint, pinout, and thermal pad geometry than TO-252. Direct replacement requires PCB redesign to accommodate the 3.3mm × 3.3mm body, wettable flank leads, and 8-pin drain configuration. Thermal and electrical simulation is advised before layout migration.

DMT47M2SFVW-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 15.4A (Ta), 49.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 897 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.67W (Ta), 27.1W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount, Wettable Flank

Supplier Device Package:: PowerDI3333-8 (SWP) Type UX

DMT47M2SFVW-13 FAQ

1.How can I place an order for DMT47M2SFVW-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT47M2SFVW-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT47M2SFVW-13 reliable?

The price and inventory of DMT47M2SFVW-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT47M2SFVW-13 is usually 5 days.

3.What payment methods are accepted for DMT47M2SFVW-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT47M2SFVW-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT47M2SFVW-13?

DMT47M2SFVW-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT47M2SFVW-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT47M2SFVW-13?

For technical support, including DMT47M2SFVW-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT47M2SFVW-13 requirements.

6.How does Aetrix verify that DMT47M2SFVW-13 is sourced from the original manufacturer or authorized distributors?

All DMT47M2SFVW-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT47M2SFVW-13 meets industry standards.

7.What is the process for return or replacement of DMT47M2SFVW-13?

All DMT47M2SFVW-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT47M2SFVW-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT47M2SFVW-13 part is unused and in its original packaging.

Return procedure for DMT47M2SFVW-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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