Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMT6004SCT

Part No.:
DMT6004SCT
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixDMT6004SCT.pdf
Description:
MOSFET N-CH 60V 100A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:50

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMT6004SCT from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TO220AB package, rated for 100A continuous drain current at TC = +25°C, with RDS(ON) of 3.65 mΩ at VGS = 10V and 100% production-tested UIS robustness. It serves as a high-current power switch in automotive engine management and DC-DC converter primary-side switching stages.

For engineers reviewing the DMT6004SCT datasheet, DMT6004SCT pinout, DMT6004SCT application, or DMT6004SCT equivalent, key selection criteria include its 1.1°C/W junction-to-case thermal resistance, 95.4 nC total gate charge, 4556 pF input capacitance, and AEC-Q101 suitability for under-hood automotive power stages requiring high pulsed avalanche energy (200 mJ).

Technical Context

This MOSFET employs planar silicon technology optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (2–4 V) enables compatibility with standard 10 V gate drivers, while the 0.7 Ω gate resistance supports controlled turn-on/turn-off timing without external gate resistors in many designs.

The device integrates a robust body diode with 1.3 V forward voltage at 100 A and 50.5 ns reverse recovery time, enabling synchronous rectification support and reducing need for external freewheeling diodes in buck converters and motor drive half-bridges.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS60 V - Maximum blocking voltage for 12 V and 48 V automotive bus applications
RDS(ON)3.65 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 100 A, critical for thermally constrained modules
ID (continuous)100 A @ TC = +25°C - Supports high-power DC-DC stages without parallel devices
EAS200 mJ - Confirmed avalanche energy rating ensures reliability during inductive load switching transients
Qg95.4 nC - Determines gate driver power requirement and switching speed trade-off in 100–500 kHz converters
RθJC1.1 °C/W - Enables direct mounting to heatsink for efficient thermal path in TO220AB footprint
Ciss4556 pF - Impacts Miller effect and gate drive loop stability in high-side configurations

Pinout & Package

Package: TO220AB - Molded plastic case with matte tin-plated copper leadframe, UL 94V-0 rated, 1.85 g weight, and industry-standard heat-sink mounting tab.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current path collectorElectrically connected to metal tab; must be isolated from heatsink unless system ground reference permits
SourceCurrent return nodeLow-inductance connection point for sense resistor placement and gate driver return path
GateControl terminalHigh-impedance input requiring <100 nA leakage control; sensitive to ESD and layout-induced ringing

Key Features

FeatureDesign Value
100% UIS tested in productionGuarantees minimum 45 A single-pulse avalanche current and 200 mJ energy handling across full temperature range
Low input capacitance (Ciss)4556 pF reduces gate drive power loss and improves switching efficiency above 200 kHz
Lead-free & halogen-free "Green" constructionMeets RoHS 3 (2015/863/EU) and IATF 16949 manufacturing requirements for automotive supply chains
Low gate leakage (±100 nA)Minimizes standby power loss and prevents unintended turn-on in high-impedance gate drive circuits

Applications

Engine Management SystemsBody Control Electronics

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems operating at 12 V nominal bus with 100 ms pulse widths.

IC Role / Device Role / Timing Role: Primary power switch controlling solenoid actuation with precise on/off timing and fast fall time (<18 ns).

Use Value: 3.65 mΩ RDS(ON) limits power dissipation to <0.4 W per pulse, enabling compact PCB layout without forced air cooling.

Use Scenario: Power distribution unit (PDU) for lighting, window lift, and seat control modules in 48 V mild-hybrid architectures.

IC Role / Device Role / Timing Role: Low-side load switch managing up to 100 A peak current with integrated overcurrent protection via current-sense feedback.

Use Value: 1.1°C/W RθJC allows direct heatsink mounting to sustain 85°C ambient operation without derating.

DC-DC ConvertersMotor Drive Half-Bridges

Use Scenario: Primary-side switch in 3 kW bidirectional DC-DC converter for vehicle-to-grid (V2G) charging interfaces.

IC Role / Device Role / Timing Role: Hard-switched 60 V buck converter stage operating at 300 kHz with synchronous rectification.

Use Value: 95.4 nC Qg enables gate drive with <2 W average power using discrete MOSFET drivers, minimizing driver IC count.

Use Scenario: Low-side switch in 48 V BLDC motor inverter for electric power steering (EPS), handling 100 A phase current peaks.

IC Role / Device Role / Timing Role: Fast-turning switch supporting 20 kHz PWM with <100 ns total switching time (tF + tR).

Use Value: 50.5 ns tRR and 80.8 nC QRR reduce body diode conduction loss and EMI in freewheeling intervals.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL220N6F7RDS(ON) = 2.2 mΩ @ 10 V, but rated only for 80 A continuous; higher Ciss (5400 pF)Better conduction loss at lower current; less suitable for 100 A sustained loads due to package thermal limitSelect when peak current ≤80 A and lowest RDS(ON) is priority over avalanche margin
IXFH100N60X3600 V rating, 100 A, RDS(ON) = 6.2 mΩ; higher VGS(TH) (3–5 V); not AEC-Q101 qualifiedDesigned for industrial SMPS, not automotive; lacks production UIS testing and automotive change controlChoose only for non-automotive 600 V applications where 60 V rating is insufficient

Compared with STL220N6F7 and IXFH100N60X3, DMT6004SCT uniquely balances 100 A current capability, 60 V rating, AEC-Q101 qualification, and 200 mJ avalanche energy-making it the only option validated for automotive under-hood DC-DC and engine control use cases requiring both high current and transient robustness.

Availability

DMT6004SCT is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for DMT6004SCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal solutions, with manufacturing certified to IATF 16949 and quality systems aligned to AEC-Q200 standards.

The DMT6004SCT belongs to Diodes' automotive-qualified PowerMOS family, engineered specifically for high-current, high-reliability power switching in engine control units, battery management, and 48 V mild-hybrid systems.

FAQ

Is DMT6004SCT qualified to AEC-Q101?

Yes, DMT6004SCT is AEC-Q101 qualified for automotive applications. The datasheet explicitly states that Diodes Incorporated offers AEC-Q100/101/200 qualified parts and PPAP-capable production in IATF 16949 certified facilities. This qualification covers stress testing including HTGB, HTRB, UHAST, and 100% UIS production screening.

What is the maximum safe operating temperature for DMT6004SCT?

The DMT6004SCT has a specified junction temperature range of –55°C to +150°C. Its maximum continuous operation depends on thermal design: with infinite heatsink mounting, it sustains 100 A at TC = +25°C; derating begins above +70°C case temperature per the SOA curve, and thermal shutdown occurs if TJ exceeds +150°C.

Can DMT6004SCT be used in synchronous rectification?

Yes, DMT6004SCT supports synchronous rectification due to its low RDS(ON) (3.65 mΩ), fast body diode (tRR = 50.5 ns, QRR = 80.8 nC), and low VSD (1.3 V at 100 A). Its gate threshold (2–4 V) allows reliable turn-on with typical 5–10 V gate drive signals in secondary-side control schemes.

Does DMT6004SCT require a gate resistor for safe operation?

A gate resistor is recommended to dampen ringing and control dV/dt, especially in high-frequency or high-di/dt applications. While the device's 0.7 Ω intrinsic gate resistance provides some damping, typical designs use 5–22 Ω external resistors to balance switching speed against EMI and shoot-through risk in bridge configurations.

DMT6004SCT Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.65mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
95.4 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4556 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
2.3W (Ta), 113W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

DMT6004SCT FAQ

1.How can I place an order for DMT6004SCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6004SCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6004SCT reliable?

The price and inventory of DMT6004SCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6004SCT is usually 5 days.

3.What payment methods are accepted for DMT6004SCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6004SCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6004SCT?

DMT6004SCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6004SCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6004SCT?

For technical support, including DMT6004SCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6004SCT requirements.

6.How does Aetrix verify that DMT6004SCT is sourced from the original manufacturer or authorized distributors?

All DMT6004SCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6004SCT meets industry standards.

7.What is the process for return or replacement of DMT6004SCT?

All DMT6004SCT units undergo pre-shipment inspection (PSI). If there is an issue with DMT6004SCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6004SCT part is unused and in its original packaging.

Return procedure for DMT6004SCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT6004SCT Tags

  • DMT6004SCT
  • DMT6004SCT PDF
  • DMT6004SCT Datasheet
  • DMT6004SCT Specifications
  • DMT6004SCT Images
  • Diodes Incorporated
  • Diodes Incorporated DMT6004SCT
  • Buy DMT6004SCT
  • DMT6004SCT Price
  • DMT6004SCT Distributor
  • DMT6004SCT Supplier
  • DMT6004SCT Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER