Diodes Incorporated DMT6004SPS-13

Overview

DMT6004SPS from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, designed for high-current, high-efficiency power switching. It delivers 3.1 mΩ R_DS(ON) at V_GS = 10 V, 100 A continuous drain current at T_C = +25°C, and 95.4 nC total gate charge-enabling low conduction and switching losses in synchronous rectification and DC-DC converter output stages.

For engineers reviewing the DMT6004SPS datasheet, DMT6004SPS pinout, DMT6004SPS application, or DMT6004SPS equivalent, key selection criteria include its 0.9 °C/W R_θJC, 100% production-tested UIS robustness, 45 A avalanche current rating, and thermal performance validated up to +150°C junction temperature in automotive-grade power management designs.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(ON) while maintaining fast switching dynamics: C_iss = 4556 pF, Q_gd = 20.4 nC, and t_F = 12 ns enable efficient operation in hard-switched topologies above 100 kHz. Its body diode exhibits t_RR = 50.5 ns and Q_RR = 80.8 nC, supporting synchronous rectifier replacement with controlled reverse recovery.

The device operates across –55°C to +150°C junction range and features ±20 V gate-source voltage rating, 2.0–4.0 V gate threshold (V_GS(TH)), and 100 A pulsed drain current capability (I_DM = 400 A). Thermal design leverages the exposed drain pad for direct PCB copper thermal coupling, with R_θJC = 0.9 °C/W measured to the soldering point.

Key Specifications

Pinout & Package

Package: PowerDI5060-8 - surface-mount, thermally enhanced 8-pin leadless package with exposed drain pad (pins 1–8 arranged as S-D-D-G-D-D-S-S per top-view marking diagram; pin 1 = source, pins 2/3/5/6 = drain, pin 4 = gate, pins 7/8 = source).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB033N06N3 G and STL220N6F7, DMT6004SPS offers superior thermal coupling via PowerDI5060-8, production-validated UIS margin, and tighter gate threshold distribution-making it optimal for space-constrained, high-reliability 48 V power conversion where thermal and transient robustness are prioritized over marginal R_DS(ON) reduction.

Availability

DMT6004SPS is available at Aetrix Electronics and suitable for server VRMs, automotive DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-aligned manufacturing traceability.

Supply support for DMT6004SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The DMT6004SPS belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-current power conversion in automotive, industrial, and computing applications where thermal performance and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current for DMT6004SPS at T_C = +70°C?

The DMT6004SPS supports 100 A continuous drain current at T_C = +70°C, as confirmed in the Absolute Maximum Ratings table (Note 6 & 9). This reflects package-limited current handling independent of ambient conditions, enabled by the PowerDI5060-8's exposed drain pad and low R_θJC = 0.9 °C/W.

Does DMT6004SPS have AEC-Q101 qualification?

DMT6004SPS is manufactured in IATF 16949-certified facilities and supports PPAP documentation; however, Diodes does not list it as pre-qualified to AEC-Q101 in public documentation. Customers requiring formal AEC-Q101 certification must contact Diodes' automotive team for qualification status and change control procedures.

How is the gate threshold voltage (V_GS(TH)) distributed across temperature?

V_GS(TH) decreases linearly with rising junction temperature-from ~2.5 V at –55°C to ~1.8 V at +150°C-as shown in Figure 8 of the datasheet. This negative temperature coefficient ensures inherent current sharing stability in parallel configurations without external balancing resistors.

Can DMT6004SPS be used in a high-side switch configuration?

Yes-DMT6004SPS supports high-side switching when paired with a floating gate driver capable of delivering ≥10 V gate drive referenced to the source node. Its ±20 V V_GS rating and 4.0 V max V_GS(TH) ensure reliable turn-on even with bootstrap voltage droop in typical high-side applications.