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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT6005LCT

Name: DMT6005LCT
Brand: Diodes Incorporated
SKU: DMT6005LCT
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT6005LCT

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: DMT6005LCT.pdf

Description:: MOSFET N-CH 60V 100A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:8,604

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Product details

Overview

DMT6005LCT from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TO220-3 package, rated for 100A continuous drain current at T_C = +25°C, with R_DS(ON) = 4.5 mΩ @ V_GS = 10V and 8.8 mΩ @ V_GS = 4.5V. It delivers low conduction loss and fast switching for high-efficiency power conversion in automotive body control and engine management systems.

For engineers reviewing the DMT6005LCT datasheet, DMT6005LCT pinout, DMT6005LCT application, or DMT6005LCT equivalent, key selection criteria include its AEC-Q101 qualification, 100% unclamped inductive switching rating (IAS = 29.5A), junction-to-case thermal resistance of 1.2°C/W, and low gate charge (Q_G = 47.1 nC @ 10V) enabling efficient gate drive in DC-DC converters.

Technical Context

This MOSFET employs planar silicon process technology optimized for low R_DS(ON) and controlled gate charge distribution. Its threshold voltage range (1–3 V) ensures robust turn-on under 4.5V logic-level drive, while the integrated body diode supports synchronous rectification and freewheeling in buck and half-bridge topologies.

The device's SOA is defined by R_DS(ON)-limited conduction at high duty cycles and transient thermal limits (R_θJC = 1.2°C/W). Avalanche energy rating (E_AS = 43.5 mJ) and I_AS = 29.5A support reliable operation in inductive load switching without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche onset; enables use in 48V automotive and industrial bus systems.
R_DS(ON) @ 10V	4.5 mΩ - Conduction loss of 4.5 mW/A² at full-rated 100A; reduces I²R heating in high-current power stages.
R_DS(ON) @ 4.5V	8.8 mΩ - Enables direct drive from 5V microcontrollers or gate drivers without level-shifting, critical for compact ECUs.
Q_G @ 10V	47.1 nC - Total gate charge determines required driver peak current; supports <100 ns switching transitions with 0.5A drivers.
I_AS	29.5 A - Peak single-pulse avalanche current capability; allows safe operation during inductive turn-off transients in motor drives.
R_θJC	1.2 °C/W - Thermal resistance from junction to case; permits >80W dissipation with standard heatsink mounting (e.g., 10°C/W sink yields ~100°C ΔT).
E_AS	43.5 mJ - Energy absorbed during unclamped inductive switching; eliminates need for external clamping diodes in relay/snubber-free designs.

Pinout & Package

Package: TO220-3 molded plastic case with matte tin-plated copper leadframe; UL 94V-0 rated; weight ≈1.85 g.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; requires insulated mounting hardware when isolated from heatsink.
Source	Reference node for gate drive and current return	Common connection point for load return and gate driver ground; defines V_GS reference.
Gate	Control terminal for channel modulation	High-impedance input requiring low-inductance routing; sensitive to ringing due to C_iss = 2962 pF.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive underhood environments (-40°C to +150°C TJ); supports production deployment in engine control modules.
100% UIS tested	Each unit screened for unclamped inductive switching reliability; eliminates field failures from inductive kickback in solenoid/relay drivers.
Low Q_GD/Q_GS ratio	Q_GD = 12.5 nC, Q_GS = 10.2 nC - Minimizes Miller plateau duration, improving hard-switching efficiency and EMI behavior.
Green, halogen-free construction	Br < 900 ppm, Cl < 900 ppm, Sb < 1000 ppm - Complies with automotive OEM environmental mandates and RoHS 2 (2011/65/EU).

Applications

Engine Management Systems

Body Control Modules

Use Scenario: High-side fuel injector driver in gasoline direct injection (GDI) systems operating at 12–48V bus with 10 ms pulse widths.

IC Role / Device Role / Timing Role: Power switch controlling solenoid actuation; must sustain 20–30A peak current with <1 µs turn-off to prevent over-fueling.

Use Value: Low R_DS(ON) minimizes on-state power loss (<1W at 25A), while 29.5A I_AS rating handles inductive flyback without external clamp.

Use Scenario: Low-side headlight LED driver in adaptive front-lighting systems (AFS), PWM-controlled at 200 Hz with 0–100% dimming.

IC Role / Device Role / Timing Role: Synchronous buck switch delivering up to 85A continuous current; operates in hard-switching mode with 10V gate drive.

Use Value: 4.5 mΩ R_DS(ON) reduces conduction loss by >30% vs. legacy 6.5 mΩ parts, enabling smaller heatsinks and higher lumen density per watt.

DC-DC Converters

Industrial Motor Drives

Use Scenario: Primary-side synchronous rectifier in 48V-to-12V isolated buck converter for telecom power shelves.

IC Role / Device Role / Timing Role: High-frequency (300 kHz) switching element with gate drive synchronized to primary FET; requires low Q_G and fast t_F = 8.9 ns.

Use Value: Q_G = 47.1 nC and t_R/t_F < 10 ns enable >95% efficiency at 50A output while limiting gate driver losses to <0.3W.

Use Scenario: Half-bridge leg in 24V BLDC motor controller for HVAC blowers, handling 60A RMS with 150°C junction temperature.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter; subjected to repetitive 100A pulsed currents and body diode reverse recovery stress.

Use Value: Body diode t_RR = 40.4 ns and Q_RR = 49.7 nC reduce commutation losses and EMI; R_θJC = 1.2°C/W enables stable operation without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(ON) = 7.5 mΩ @ 10V; Q_G = 65 nC; no AEC-Q101 qualification	Not suitable for automotive underhood use; limited to industrial/commercial DC-DC	Select only if AEC-Q101 compliance is not required and gate drive capability exceeds 0.7A peak.
IRF1404ZPBF	R_DS(ON) = 4.7 mΩ @ 10V; I_AS = 220A (single pulse); no UIS screening	Higher avalanche current but untested for repetitive UIS; lacks automotive qualification	Preferable for non-automotive high-energy inductive loads where cost is prioritized over reliability validation.

Compared with STP60NF06 and IRF1404ZPBF, DMT6005LCT offers superior automotive-grade reliability via AEC-Q101 and 100% UIS testing, lower Q_G, and tighter R_DS(ON) tolerance-making it optimal for safety-critical, thermally constrained automotive power stages where long-term field robustness is mandatory.

Availability

DMT6005LCT is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply, AEC-Q101 compliance, and high-current switching performance.

Supply support for DMT6005LCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' Automotive Power Solutions product line, engineered specifically for high-reliability, high-current switching in engine control, chassis, and body electronics where thermal stability and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current at T_C = +70°C?

The DMT6005LCT supports 80A continuous drain current when case temperature is maintained at +70°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO220-3 package under real-world heatsinking conditions, not silicon capability alone.

Is the metal tab electrically connected to the Drain terminal?

Yes-the metal tab of the TO220-3 package is internally bonded to the Drain terminal. This configuration requires electrical isolation (e.g., mica washer or insulating pad) when mounting to a grounded heatsink to prevent short circuits.

Does this MOSFET support 5V logic-level gate drive?

Yes-its R_DS(ON) is specified at 8.8 mΩ with V_GS = 4.5V, confirming full enhancement at standard 5V TTL/CMOS logic levels. Gate threshold voltage (1–3 V) ensures reliable turn-on even with marginal drive margins.

What does "100% Unclamped Inductive Switching" testing mean for system design?

Each DMT6005LCT unit undergoes individual UIS stress testing per JEDEC JESD22-A110, verifying ability to absorb 43.5 mJ avalanche energy without degradation. This eliminates need for external TVS or RCD snubbers in relay, solenoid, or motor drive circuits-reducing BOM count and layout area.

DMT6005LCT Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 47.1 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2962 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

DMT6005LCT FAQ

1.How can I place an order for DMT6005LCT through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6005LCT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6005LCT reliable?

The price and inventory of DMT6005LCT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6005LCT is usually 5 days.

3.What payment methods are accepted for DMT6005LCT?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6005LCT transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6005LCT?

DMT6005LCT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6005LCT order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6005LCT?

For technical support, including DMT6005LCT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6005LCT requirements.

6.How does Aetrix verify that DMT6005LCT is sourced from the original manufacturer or authorized distributors?

All DMT6005LCT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6005LCT meets industry standards.

7.What is the process for return or replacement of DMT6005LCT?

All DMT6005LCT units undergo pre-shipment inspection (PSI). If there is an issue with DMT6005LCT, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6005LCT part is unused and in its original packaging.

Return procedure for DMT6005LCT:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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