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Diodes Incorporated DMT6005LFG-13
- Part No.:
- DMT6005LFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6005LFG-13.pdf
- Description:
- MOSFET N-CH 60V PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:9,473
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Product details
Overview
DMT6005LFG-13 from Diodes Incorporated is a 60V N-channel enhancement-mode power MOSFET in PowerDI3333-8 package, optimized for high-efficiency synchronous rectification and DC-DC conversion. It delivers 4.1 mΩ RDS(ON) at VGS = 10 V, 100 A continuous drain current at TC = +25°C, and 171 mJ avalanche energy-enabling robust operation in high-current, thermally constrained power stages.
For engineers reviewing the DMT6005LFG-13 datasheet, DMT6005LFG-13 pinout, DMT6005LFG-13 application, or DMT6005LFG-13 equivalent, this device is selected for low conduction loss, fast switching (tF = 11.0 ns), and thermal efficiency in compact board layouts where SO-8 footprint reduction is critical.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low RDS(ON) while maintaining controlled gate charge (Qg = 48.7 nC at VGS = 10 V) and low Crss (69 pF), supporting high-frequency PWM operation up to several hundred kHz. Its 100% production-tested UIS capability ensures reliability under inductive switching stress.
The PowerDI3333-8 package features an exposed drain pad with RθJC = 2.0°C/W, enabling direct thermal coupling to PCB copper, and supports 62.5 W power dissipation at TC = +25°C-critical for motor control H-bridge legs and multiphase VRMs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source blocking voltage without breakdown. |
| RDS(ON) | 4.1 mΩ @ VGS = 10 V - Enables ≤0.41 W conduction loss at 100 A, reducing thermal load in high-current paths. |
| ID (continuous) | 100 A @ TC = +25°C - Supports high-current power rails when mounted on heatsinked PCBs. |
| EAS | 171 mJ - Sustains repetitive inductive energy spikes in motor drive freewheeling or synchronous rectifier turn-off. |
| Qg | 48.7 nC @ VGS = 10 V - Determines gate driver current requirement (~4.9 A peak for 10 ns rise time). |
| tF | 11.0 ns - Limits switching transition time, reducing overlap loss in hard-switched topologies. |
| RθJC | 2.0°C/W - Allows precise junction temperature estimation when thermal path to case is controlled. |
Pinout & Package
Package: PowerDI® 3333-8 - Thermally enhanced 8-pin molded plastic package with exposed drain pad (pins 1–4 and 5–8 are source/gate/drain terminals; drain connected to bottom thermal pad).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Common source connection for internal parallel die; low-inductance return path for high di/dt currents. |
| 5, 6, 7, 8 | Drain (D) | High-current output node tied to exposed thermal pad; requires soldered thermal land for RθJC performance. |
| G (pin 3 of top view marking) | Gate (G) | Single gate input (pin 3 labeled "G" in top-view diagram); low Rg = 0.7 Ω enables fast turn-on/turn-off. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees minimum 18.5 A avalanche current and 171 mJ energy handling per pulse-no derating needed for inductive loads. |
| PowerDI3333-8 footprint | Occupies only 33% board area vs. SO-8, enabling higher power density in space-constrained DC-DC modules. |
| Low RDS(ON) @ 4.5 V | 7 mΩ at VGS = 4.5 V supports logic-level gate drive from 5 V microcontrollers or PWM controllers. |
| RoHS 3 & Halogen-free | Meets EU Directive 2015/863/EU with <900 ppm Br/Cl and <1000 ppm Sb-compliant for automotive and industrial end equipment. |
Applications
| Synchronous Rectification | Motor Control |
|---|---|
Use Scenario: Secondary-side switching in isolated 48 V–12 V LLC resonant converters for server PSUs. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; commutated by controller's complementary PWM signal. Use Value: Reduces conduction loss by >60% vs. 40 V Schottky, improving full-load efficiency from 93.2% to 95.1% at 100 A output. | Use Scenario: High-side/low-side leg in 24 V BLDC motor inverter for industrial automation. IC Role / Device Role / Timing Role: N-channel power switch in half-bridge configuration; driven by isolated gate driver with bootstrap supply. Use Value: Enables 100 A peak phase current with <1.2°C/W effective thermal resistance when paired with 2 oz copper thermal pad. |
| DC-DC Converters | Power Management |
Use Scenario: Input-stage switch in 60 V input, 12 V output buck converter for telecom rectifiers. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz; duty cycle modulated by voltage-mode controller. Use Value: Achieves <0.8 mΩ·nC figure-of-merit (RDS(ON) × Qg)-minimizing combined conduction and switching loss at 50 A load. | Use Scenario: OR-ing FET in redundant 48 V backplane power distribution for data center racks. IC Role / Device Role / Timing Role: Reverse-polarity protection and current-sharing switch; controlled by dedicated OR-ing controller. Use Value: Supports 81 A continuous current at VGS = 6 V-matching typical hot-swap controller gate drive capability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642TRPBF | RDS(ON) = 3.3 mΩ @ 10 V; Qg = 42 nC; PQFN 5×6 mm package; no production UIS rating. | Lacks 100% UIS test-requires external snubbers in high-L di/dt motor drives. | Preferred for high-frequency (>1 MHz) DC-DC where lower Qg reduces driver loss, but not for unclamped inductive loads. |
| DMTH6005LPS-13 | RDS(ON) = 4.5 mΩ @ 10 V; same PowerDI3333-8 package; rated for AEC-Q101 automotive qualification. | Qualified for automotive underhood use (−40°C to +150°C TJ); identical thermal and electrical specs otherwise. | Select when automotive PPAP documentation, IATF 16949 traceability, or extended temperature validation is required. |
Compared with IRF6642TRPBF, DMT6005LFG-13 trades 0.8 mΩ higher RDS(ON) for guaranteed UIS robustness and smaller footprint; versus DMTH6005LPS-13, it offers identical performance at non-automotive cost and qualification level.
Availability
DMT6005LFG-13 is available at Aetrix Electronics and suitable for synchronous rectification, motor control, and DC-DC converter designs requiring stable component supply, high-current capability, and thermally efficient packaging.
Supply support for DMT6005LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability power management and signal integrity solutions for industrial, computing, and communications markets.
The DMT6005LFG belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-density power conversion where low RDS(ON), fast switching, and ruggedness in compact packages are essential.
FAQ
What is the maximum allowable junction temperature for DMT6005LFG-13?
The absolute maximum junction temperature is +150°C, as specified in the Thermal Characteristics table. Operation above this limit risks permanent parametric shift or bondwire failure. Derating is required above +125°C ambient when using the FR-4 PCB thermal reference condition (RθJA = 63°C/W).
Can DMT6005LFG-13 be used with 5 V gate drive?
Yes-it delivers 7 mΩ RDS(ON) at VGS = 4.5 V and 6.3 mΩ at VGS = 6 V, making it compatible with standard 5 V logic-level gate drivers. Gate threshold voltage is 1–2.5 V, ensuring reliable turn-on with margin even at elevated temperatures.
Is the PowerDI3333-8 package lead-free and RoHS compliant?
Yes-DMT6005LFG-13 uses matte tin annealed over copper leadframe and meets EU RoHS 3 (2015/863/EU), with bromine/chlorine <900 ppm and antimony <1000 ppm. It is also halogen- and antimony-free per Diodes' "Green" definition.
Does DMT6005LFG-13 require a heatsink in typical applications?
No discrete heatsink is required if PCB thermal design follows Diodes' recommended layout: 1-inch² 2 oz copper thermal pad connected to the exposed drain pad. At 100 A continuous, junction-to-ambient rise is ~63°C with that layout-within safe limits if ambient stays below +87°C.
DMT6005LFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.1mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 48.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3150 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.98W (Ta), 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMT6005LFG-13 FAQ
1.How can I place an order for DMT6005LFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6005LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6005LFG-13 reliable?
The price and inventory of DMT6005LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6005LFG-13 is usually 5 days.
3.What payment methods are accepted for DMT6005LFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6005LFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6005LFG-13?
DMT6005LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6005LFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6005LFG-13?
For technical support, including DMT6005LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6005LFG-13 requirements.
6.How does Aetrix verify that DMT6005LFG-13 is sourced from the original manufacturer or authorized distributors?
All DMT6005LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6005LFG-13 meets industry standards.
7.What is the process for return or replacement of DMT6005LFG-13?
All DMT6005LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6005LFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6005LFG-13 part is unused and in its original packaging.
Return procedure for DMT6005LFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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