Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated DMT6005LFG-7

Part No.:
DMT6005LFG-7
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
8-PowerVDFN
Datasheet:
AetrixDMT6005LFG-7.pdf
Description:
MOSFET N-CH 60V PWRDI3333
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,312

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

DMT6005LFG from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI3333-8 package, optimized for high-efficiency power conversion with RDS(ON) = 4.1 mΩ @ VGS = 10V, 100A continuous drain current at TC = +25°C, and 100% production-tested UIS robustness. It serves as a primary switching element in synchronous rectification stages of DC-DC converters.

For engineers reviewing the DMT6005LFG datasheet, DMT6005LFG pinout, DMT6005LFG application, or DMT6005LFG equivalent, key selection criteria include its low on-resistance at 4.5V gate drive (7 mΩ), thermally efficient exposed-drain package, and validated avalanche energy rating (EAS = 171 mJ) for inductive load reliability.

Technical Context

This MOSFET employs a trench-gate silicon process to achieve simultaneous low RDS(ON) and fast switching performance, with Ciss = 3150 pF and Qg = 48.7 nC at VGS = 10V. Its body diode exhibits tRR = 40.8 ns and QRR = 51.5 nC under IF = 30A, di/dt = 100 A/μs conditions.

The device is rated for operation from –55°C to +150°C junction temperature, with RθJC = 2.0°C/W enabling high-power dissipation when mounted on a thermally enhanced PCB pad. Gate threshold voltage VGS(TH) is specified 1–2.5 V, supporting TTL- and 3.3V-compatible gate drivers.

Key Specifications

Parameter Value and Actual Design Meaning
VDSS 60 V - Maximum blocking voltage before avalanche conduction; suitable for 48V bus systems with margin.
RDS(ON) @ VGS = 10V 4.1 mΩ - Enables <1W conduction loss at 50A, critical for high-current synchronous rectifiers.
ID Continuous @ TC = 25°C 100 A - Limited by package thermal capability; requires proper copper pour and soldering to exposed drain pad.
EAS 171 mJ - Confirmed single-pulse avalanche energy; supports reliable operation in inductive switching circuits without snubbers.
Qg @ VGS = 10V 48.7 nC - Determines gate driver current requirement; enables efficient 500 kHz+ switching with moderate driver strength.
tRR / QRR 40.8 ns / 51.5 nC - Low reverse recovery charge minimizes shoot-through risk and switching losses in synchronous buck topologies.
RθJC 2.0°C/W - Thermal resistance from junction to case (exposed drain); enables direct heatsinking via PCB copper or external metal slug.

Pinout & Package

Package: PowerDI® 3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad occupying only 33% board area vs. SO-8; UL 94V-0 molded plastic, matte tin annealed terminals, moisture sensitivity level 1.

Pin/Terminal Circuit Role Design Meaning
1, 2, 3, 4, 8, 7, 6, 5 (Top View) Drain (D), Source (S), Gate (G) Pins 1–4 & 6–8: Parallel-connected drain terminals; Pin 5: Gate; Pin 6: Source - dual-source configuration reduces source inductance and improves switching stability.

Key Features

Feature Design Value
100% UIS tested in production Guarantees minimum 171 mJ avalanche energy per unit, eliminating need for batch-level qualification testing in end applications.
Low RDS(ON) @ 4.5V 7 mΩ enables use with 5V or 4.5V logic-level gate drivers without level-shifting, reducing BOM count in cost-sensitive motor drives.
PowerDI3333-8 footprint 3.3 mm × 3.3 mm outline with exposed drain pad delivers 31× lower RθJC than SO-8, allowing >3× higher power density in space-constrained converters.
Green, RoHS-compliant construction Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive and industrial environmental compliance requirements.

Applications

Synchronous Rectification in DC-DC Converters Brushless DC Motor Control Stages

Use Scenario: High-current secondary-side switch in 12V/48V isolated DC-DC modules for telecom and server PSUs.

IC Role / Device Role / Timing Role: Primary power switch replacing Schottky diodes to reduce conduction loss and improve efficiency above 95%.

Use Value: 4.1 mΩ RDS(ON) cuts conduction loss by >60% vs. typical 40V Schottky, directly increasing full-load efficiency by 1.2–1.8%.

Use Scenario: High-side and low-side switches in 3-phase inverter bridges driving 200–500W BLDC motors in power tools and e-bikes.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET used in PWM-driven half-bridge legs with integrated bootstrap gate drive.

Use Value: 40.8 ns body diode tRR prevents cross-conduction during dead-time, reducing shoot-through failure risk in 20–50 kHz motor control.

Industrial 48V Input Buck Converters Automotive Body Control Modules (BCM)

Use Scenario: Main switching FET in 48V-to-12V step-down converters powering ADAS sensors and infotainment subsystems.

IC Role / Device Role / Timing Role: High-current, high-reliability switch handling up to 81A at 6V gate drive in compact 2-layer PCB layouts.

Use Value: 6.3 mΩ RDS(ON) @ VGS = 6V ensures stable operation with standard 6V gate drivers, avoiding gate boost circuitry.

Use Scenario: Load switch for high-current actuators (e.g., power windows, seat adjusters) in 12V/48V hybrid architectures.

IC Role / Device Role / Timing Role: Protected high-side switch implementing controlled inrush limiting and short-circuit protection via external controller.

Use Value: 100% UIS qualification ensures survival during load dump transients (ISO 7637-2 Pulse 5a), eliminating need for external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMT6005LK3-13 Same die, identical RDS(ON), Qg, and EAS; differs only in tape-and-reel packaging (3k vs. 2k units). No functional difference; selected for volume procurement where 3k reels align with SMT line setup. Drop-in replacement for DMT6005LFG-7 when reel quantity matches production batch size.
DMTH6005LPS-13 Same RDS(ON) and voltage rating but in PowerFLAT™ 5x6 package; RθJC = 1.7°C/W (vs. 2.0°C/W); Qg = 52.5 nC (vs. 48.7 nC). Better thermal performance but slightly slower switching; suited for thermally limited but less aggressive frequency designs. Preferred when board layout allows larger 5x6 footprint and junction temperature margin is more critical than switching speed.

Compared with DMT6005LFG-7, DMT6005LK3-13 offers identical electrical performance in a different reel size, while DMTH6005LPS-13 trades minor gate charge increase for improved thermal resistance-making it preferable in thermally constrained but lower-frequency applications.

Availability

DMT6005LFG is available at Aetrix Electronics and suitable for synchronous rectification, motor control, and industrial DC-DC converter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for DMT6005LFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.

DMT6005LFG belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-current, high-efficiency switching in space-constrained power supplies and motor drives where thermal density and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current at TA = +70°C?

The DMT6005LFG supports 14 A continuous drain current at ambient temperature +70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by FR-4 PCB mounting with 2 oz copper and 1-inch² thermal bias plate, not package limitation.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent oscillation during switching. With Qg = 48.7 nC and typical gate driver output impedance, a 3.3 Ω resistor achieves measured tR = 11.3 ns and tF = 11.0 ns, matching characterization conditions in the datasheet.

Is the PowerDI3333-8 package lead-free and RoHS compliant?

Yes, the DMT6005LFG features matte tin annealed terminals over copper leadframe and complies with EU RoHS directives 2011/65/EU and 2015/863/EU. It is also halogen- and antimony-free, meeting Diodes' "Green" definition with <900 ppm bromine/chlorine and <1000 ppm antimony.

Can this MOSFET be used in automotive applications?

While DMT6005LFG is not AEC-Q101 qualified, Diodes offers automotive-grade variants (e.g., DMT6005LFGQ) with PPAP support and IATF 16949 manufacturing. For non-safety-critical BCM or lighting loads, DMT6005LFG may be used subject to customer qualification per internal stress testing protocols.

DMT6005LFG-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
8-PowerVDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
18A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
48.7 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3150 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
1.98W (Ta), 62.5W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
POWERDI3333-8

DMT6005LFG-7 FAQ

1.How can I place an order for DMT6005LFG-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6005LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6005LFG-7 reliable?

The price and inventory of DMT6005LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6005LFG-7 is usually 5 days.

3.What payment methods are accepted for DMT6005LFG-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6005LFG-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6005LFG-7?

DMT6005LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6005LFG-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6005LFG-7?

For technical support, including DMT6005LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6005LFG-7 requirements.

6.How does Aetrix verify that DMT6005LFG-7 is sourced from the original manufacturer or authorized distributors?

All DMT6005LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6005LFG-7 meets industry standards.

7.What is the process for return or replacement of DMT6005LFG-7?

All DMT6005LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6005LFG-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6005LFG-7 part is unused and in its original packaging.

Return procedure for DMT6005LFG-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

DMT6005LFG-7 Tags

  • DMT6005LFG-7
  • DMT6005LFG-7 PDF
  • DMT6005LFG-7 Datasheet
  • DMT6005LFG-7 Specifications
  • DMT6005LFG-7 Images
  • Diodes Incorporated
  • Diodes Incorporated DMT6005LFG-7
  • Buy DMT6005LFG-7
  • DMT6005LFG-7 Price
  • DMT6005LFG-7 Distributor
  • DMT6005LFG-7 Supplier
  • DMT6005LFG-7 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER