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Diodes Incorporated DMT6005LSS-13
- Part No.:
- DMT6005LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMT6005LSS-13.pdf
- Description:
- MOSFET N-CH 60V 13.5A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:6,739
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Product details
Overview
DMT6005LSS from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-efficiency power conversion with 6 mΩ RDS(ON) at VGS = 10 V, 13.5 A continuous drain current at 25°C, and fast switching performance. It serves as a primary or synchronous rectifier switch in DC-DC converters operating up to 1 MHz.
For engineers reviewing the DMT6005LSS datasheet, DMT6005LSS pinout, DMT6005LSS application, or DMT6005LSS equivalent, key selection criteria include low on-resistance at 4.5 V gate drive, body diode recovery characteristics (tRR = 40.4 ns), thermal resistance (RθJA = 73 °C/W with 1-inch² copper), and SO-8 footprint compatibility with industry-standard layout guidelines.
Technical Context
This MOSFET employs planar trench-gate technology to achieve low RDS(ON) while maintaining controlled gate charge (Qg = 47.1 nC at 10 V) and low output capacitance (Coss = 965 pF). Its threshold voltage (VGS(TH) = 1–3 V) enables reliable turn-on with standard logic-level drivers.
The device integrates a robust intrinsic body diode with VSD = 0.9–1.2 V at 20 A and QRR = 49.7 nC, supporting high-frequency synchronous rectification without external Schottky supplementation. Thermal design is enabled by RθJC = 12.7 °C/W and JEDEC Level 1 moisture sensitivity rating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage for 48 V bus applications with 20 % margin |
| RDS(ON) | 6 mΩ @ VGS = 10 V - Enables <1 W conduction loss at 13.5 A in compact layouts |
| ID (continuous) | 13.5 A @ TA = 25°C - Supports >100 W power stages with FR-4 PCB and 2 oz copper |
| Qg | 47.1 nC @ VGS = 10 V - Determines gate driver power requirement and switching transition time |
| tRR | 40.4 ns - Limits reverse recovery losses during hard-switched synchronous rectification |
| RθJA | 73 °C/W - Specifies junction-to-ambient thermal rise under 1-inch² copper heatsinking |
| Ciss | 2962 pF - Impacts high-frequency gate drive impedance and EMI filtering requirements |
Pinout & Package
Package: SO-8 (Surface-Mount, 8-pin, 3.95 mm × 4.95 mm body, 1.27 mm pitch). Compliant with JEDEC MS-012, UL 94V-0 flammability rating, and J-STD-020 Level 1 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires ≤±20 V drive; 0.66 Ω internal gate resistance limits ringing |
| 2 (S) | Source | Power return node; tied to PCB ground plane; body diode anode connection |
| 3 (D) | Drain | Main current path output; connected to high-side or low-side switching node |
| 4 (D) | Drain | Parallel drain connection for reduced package inductance and thermal spreading |
| 5 (D) | Drain | Third drain terminal enhancing current handling and thermal dissipation |
| 6 (D) | Drain | Fourth drain terminal; all four drain pins electrically common and thermally coupled |
| 7 (S) | Source | Secondary source connection; improves current sharing and reduces source inductance |
| 8 (S) | Source | Third source terminal; supports Kelvin sensing or low-inductance gate loop closure |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 8.9 mΩ - Enables efficient operation with 3.3 V or 5 V microcontroller gate drivers |
| Fast switching speed | tF = 8.9 ns - Reduces switching losses in >500 kHz DC-DC topologies |
| Low input capacitance | Ciss = 2962 pF - Minimizes gate drive power and improves EMI profile |
| Green construction | Halogen- and antimony-free, RoHS-compliant - Meets IPC-1752A Class 2 material declarations |
| Enhanced thermal interface | RθJC = 12.7 °C/W - Allows direct thermal coupling to heatsink via exposed drain pads |
Applications
| Server VRM Power Stage | USB-C PD 45W Adapter |
|---|---|
Use Scenario: High-density 12 V input → 1.0 V/100 A output buck converter in AI accelerator server boards. IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET in multiphase interleaved buck stage, switching at 800 kHz. Use Value: 6 mΩ RDS(ON) and 40.4 ns tRR reduce conduction + recovery losses by 18 % vs. legacy 8 mΩ parts, enabling 95.2 % peak efficiency. |
Use Scenario: Secondary-side synchronous rectification in 45 W USB-C power adapter with 20 V output. IC Role / Device Role / Timing Role: Low-side switch in flyback topology, driven by dedicated SR controller with adaptive timing. Use Value: 8.9 mΩ RDS(ON) at 4.5 V ensures full enhancement under light-load burst-mode conditions, improving no-load standby efficiency to <30 mW. |
| Industrial 24V DC-DC Module | Automotive ADAS Camera Power Supply |
Use Scenario: 24 V input → 5 V/6 A isolated DC-DC module for PLC I/O modules with extended temperature range. IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward converter, operating at 350 kHz. Use Value: 14.8 A avalanche current rating and 98 mJ EAS withstand repetitive clamp energy without derating over –40 to +125 °C ambient. |
Use Scenario: 12 V automotive battery → 3.3 V camera sensor rail in rear-view ADAS system with ASIL-B compliance. IC Role / Device Role / Timing Role: Point-of-load buck converter switch in compact 12 mm × 12 mm module with thermal pad grounding. Use Value: SO-8 package with 4× drain terminals provides 32 % lower thermal resistance than TSOP-6 equivalents, sustaining 11.3 A at 105 °C case temperature. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF7470PBF | RDS(ON) = 7.5 mΩ @ 10 V; higher Qg = 52 nC; SO-8 but non-Green (halogenated) | Limited to industrial use where halogen-free compliance is not mandated | Prefer DMT6005LSS when RoHS 2 and IPC-1752A reporting are required |
| Si7157DP-T1-GE3 | RDS(ON) = 5.2 mΩ @ 10 V; lower VDSS = 40 V; Ciss = 2200 pF | Not suitable for 48 V systems due to lower breakdown voltage | Choose DMT6005LSS for 60 V-rated designs requiring margin above 48 V nominal rails |
Compared with IRF7470PBF and Si7157DP-T1-GE3, DMT6005LSS uniquely balances 60 V rating, halogen-free compliance, and 8.9 mΩ RDS(ON) at 4.5 V-making it optimal for space-constrained, thermally demanding, and environmentally regulated 48 V power delivery systems.
Availability
DMT6005LSS is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, industrial DC-DC modules, and automotive ADAS power supplies requiring stable component supply across multi-year production cycles.
Supply support for DMT6005LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design centers across Asia and manufacturing in China, Taiwan, and the U.S.
The DMT6005LSS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-frequency, high-efficiency power conversion in computing, consumer, and industrial applications where low RDS(ON), fast switching, and environmental compliance are critical.
FAQ
What is the maximum safe operating junction temperature for DMT6005LSS?
The absolute maximum junction temperature is +150 °C per the datasheet. Continuous operation at this limit requires strict thermal management: RθJA must be ≤73 °C/W with 1-inch² copper, and transient thermal resistance curves (Figure 13) confirm single-pulse survivability up to 150 °C for durations ≤10 ms. Derating is mandatory above 125 °C ambient.
Can DMT6005LSS be used in linear (analog) mode for hot-swap or inrush limiting?
No. The device is characterized and qualified only for switching operation. Its Safe Operating Area (SOA) curve (Figure 12) shows limited DC capability-only 1.7 A at VDS = 30 V-and no guaranteed linear-mode SOA beyond 10 ms pulses. For linear applications, Diodes' DMN6016LSD or dedicated hot-swap controllers are recommended.
Does the SO-8 package support thermal vias under the drain pads?
Yes. The datasheet's "Suggested Pad Layout" (page 6) explicitly recommends using ≥6 thermal vias (0.3 mm diameter, 0.65 mm center-to-center) beneath each of the four drain pads. These vias must connect to inner-layer ground or power planes to achieve the rated RθJA = 73 °C/W; omission increases thermal resistance by ≥25 %.
Is the body diode suitable for reverse polarity protection in 24 V systems?
Yes, but with constraints. The body diode supports continuous forward current up to 3 A (IS) and pulsed current up to 80 A (IDM). For 24 V reverse polarity protection, ensure peak fault current remains below 80 A and that thermal mass prevents junction overheating during sustained short-circuit events-external fusing or current limiting is strongly advised.
DMT6005LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 47.1 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2962 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMT6005LSS-13 FAQ
1.How can I place an order for DMT6005LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6005LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6005LSS-13 reliable?
The price and inventory of DMT6005LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6005LSS-13 is usually 5 days.
3.What payment methods are accepted for DMT6005LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6005LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6005LSS-13?
DMT6005LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6005LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6005LSS-13?
For technical support, including DMT6005LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6005LSS-13 requirements.
6.How does Aetrix verify that DMT6005LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT6005LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6005LSS-13 meets industry standards.
7.What is the process for return or replacement of DMT6005LSS-13?
All DMT6005LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6005LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6005LSS-13 part is unused and in its original packaging.
Return procedure for DMT6005LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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