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Diodes Incorporated DMT6006LK3-13
- Part No.:
- DMT6006LK3-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
DMT6006LK3-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V TO252 T&R
- Quantity:
- Payment:
- Shipping:
Inventory:7,145
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Product details
Overview
DMT6006LK3-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in TO252 (DPAK) package, rated for 88A continuous drain current at TC = +25°C, with RDS(ON) of 6.5mΩ @ VGS = 10V and 10mΩ @ VGS = 4.5V, optimized for high-efficiency DC-DC converters and LED backlighting power stages.
For engineers reviewing the DMT6006LK3-13 datasheet, DMT6006LK3-13 pinout, DMT6006LK3-13 application, or DMT6006LK3-13 equivalent, key selection criteria include its low RDS(ON) at 4.5V gate drive, 100% production-tested UIS robustness, thermal resistance RθJC of 1.4°C/W, and AEC-Q101 readiness for automotive-grade power management designs.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve low on-resistance while maintaining fast switching performance. Its gate threshold voltage (1.2–2.5V) supports logic-level drive, and its low Qg (34.9nC @ VGS = 10V) minimizes driver losses in high-frequency synchronous buck topologies.
The device integrates a robust body diode with reverse recovery charge QRR = 40.2nC and tRR = 35.8ns, enabling reliable operation in hard-switched and synchronous rectification applications. Its SOA curve is validated for single-pulse and DC operation up to 150°C junction temperature under defined thermal bias conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60V - Withstands up to 60V drain-source blocking voltage without breakdown, suitable for 48V bus and industrial power rails. |
| RDS(ON) | 6.5mΩ @ VGS = 10V - Enables <1W conduction loss at 40A, critical for high-current output stages. |
| ID (Continuous) | 88A @ TC = +25°C - Supports high-power density designs when mounted on thermally enhanced PCBs. |
| Qg | 34.9nC @ VGS = 10V - Reduces gate driver power consumption and enables >500kHz switching in SMPS. |
| RθJC | 1.4°C/W - Allows direct thermal path from junction to heatsink via exposed drain pad, essential for thermal management. |
| EAS | 40.7mJ - Confirmed avalanche energy rating ensures reliability during inductive load switching transients. |
Pinout & Package
Package: TO252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection. Molded plastic case meets UL 94V-0 flammability rating and J-STD-020 Level 1 moisture sensitivity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects to ground or return path in buck/boost configurations. |
| Pin 2 (Gate) | Control input | Receives PWM signal; requires <2.5V threshold to initiate conduction, compatible with 3.3V/5V logic drivers. |
| Pin 3 (Drain) | Power output / high-side switch node | Connected to input rail or inductor node; electrically and thermally tied to exposed copper pad on bottom of package. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees minimum 28.5A avalanche current and 40.7mJ energy handling per pulse, eliminating need for external snubbers in flyback or boost converters. |
| Low RDS(ON) at 4.5V | 10mΩ enables full-load operation with standard 5V microcontroller GPIO or dedicated gate drivers without level-shifting. |
| Lead-free & Halogen-free | Meets RoHS 3 and "Green" definitions (<900ppm Br/Cl, <1000ppm Sb), supporting environmental compliance in consumer and automotive end products. |
| Exposed drain pad | Provides low-impedance thermal path to PCB copper, reducing junction-to-ambient resistance by >60% versus non-exposed packages. |
Applications
| DC-DC Buck Converter | LED Backlight Driver |
|---|---|
Use Scenario: High-current step-down regulator supplying 12V/5A to LCD panel backlight strings. IC Role / Device Role: Synchronous rectifier in continuous conduction mode (CCM) topology. Use Value: 6.5mΩ RDS(ON) limits conduction loss to <1.3W at 5A, improving efficiency over alternatives with >12mΩ at same VGS. |
Use Scenario: Constant-current LED driver for automotive instrument clusters with PWM dimming. IC Role / Device Role: High-side switch controlling current through series-connected LEDs. Use Value: 100% UIS qualification ensures survival during rapid PWM turn-off with inductive kickback from LED string parasitics. |
| Industrial Motor Control | Automotive Body Control Module |
Use Scenario: Half-bridge gate driver stage powering 24V BLDC fan motor in HVAC system. IC Role / Device Role: Low-side switch in three-phase inverter leg. Use Value: RθJC = 1.4°C/W allows sustained 40A operation with minimal heatsinking, reducing BOM cost vs. TO-220 alternatives. |
Use Scenario: Load switch for 12V accessory circuits (e.g., power mirrors, window lifts) with overcurrent protection. IC Role / Device Role: Protected high-side power switch with integrated thermal shutdown. Use Value: Gate threshold stability across –55°C to +150°C (±0.2V variation) ensures reliable cold-cranking and under-hood operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6006LPS-13 | Same die, but in PSOF-8 (SO-8FL) package with lower RθJA (50°C/W vs. 40°C/W) and smaller footprint. | Better suited for space-constrained, low-power-density designs where thermal mass is limited. | Select when board area is critical and peak current ≤50A; avoid if >70A continuous current or high ambient temperature required. |
| IPB070N15N3G | 150V rating, 7mΩ @ 10V, higher VGS(TH) (2.2–3.5V), TO263 package, AEC-Q101 qualified. | Designed for 48V+ systems and automotive-grade reliability with extended temperature validation. | Choose for 48V battery systems or AEC-Q101-compliant designs; not drop-in due to higher threshold and larger package. |
Compared with DMT6006LK3-13, DMT6006LPS-13 trades thermal performance for compactness, while IPB070N15N3G provides higher voltage margin and automotive qualification at the cost of gate drive compatibility and footprint size.
Availability
DMT6006LK3-13 is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting systems, and industrial motor control applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for DMT6006LK3-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and automotive markets.
The DMT6006LK3 belongs to Diodes' high-current, low-RDS(ON) PowerMOS family, engineered specifically for efficiency-critical DC-DC conversion and LED driver applications demanding robust UIS performance and thermal reliability.
FAQ
What is the maximum operating junction temperature for DMT6006LK3-13?
The device is rated for TJ = –55°C to +150°C. Its SOA curve and transient thermal resistance data confirm safe operation at 150°C junction temperature under pulsed and DC conditions when mounted per recommended PCB layout with thermal vias to inner copper layers.
Is DMT6006LK3-13 suitable for automotive applications?
While not pre-qualified to AEC-Q101, the device is manufactured in IATF 16949-certified facilities and supports PPAP documentation. Diodes offers AEC-Q101 variants (e.g., DMT6006LK3Q-13) with full automotive qualification-contact Diodes or Aetrix for qualified part numbers and test reports.
How does the body diode performance compare to discrete Schottky alternatives?
The integrated body diode has VSD = 0.8–1.2V at IS = 1A and QRR = 40.2nC, making it suitable for synchronous rectification. While forward voltage is higher than Schottky diodes, its co-packaged integration eliminates layout parasitics and reduces component count in compact converters.
What PCB layout practices maximize thermal performance?
Use ≥4 thermal vias (0.3mm diameter, filled or capped) under the exposed drain pad, connect to ≥2oz internal copper planes, and extend copper pour beyond the package outline. The recommended pad layout (C = 4.572mm × 1.060mm) ensures solder joint reliability and optimal heat spreading per Diodes' package outline AN-4001.
DMT6006LK3-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 88A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2162 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta), 89.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
DMT6006LK3-13 FAQ
1.How can I place an order for DMT6006LK3-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6006LK3-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6006LK3-13 reliable?
The price and inventory of DMT6006LK3-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6006LK3-13 is usually 5 days.
3.What payment methods are accepted for DMT6006LK3-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6006LK3-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6006LK3-13?
DMT6006LK3-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6006LK3-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6006LK3-13?
For technical support, including DMT6006LK3-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6006LK3-13 requirements.
6.How does Aetrix verify that DMT6006LK3-13 is sourced from the original manufacturer or authorized distributors?
All DMT6006LK3-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6006LK3-13 meets industry standards.
7.What is the process for return or replacement of DMT6006LK3-13?
All DMT6006LK3-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6006LK3-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6006LK3-13 part is unused and in its original packaging.
Return procedure for DMT6006LK3-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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