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Diodes Incorporated DMT6006LSS-13
- Part No.:
- DMT6006LSS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
DMT6006LSS-13.pdf
- Description:
- MOSFET BVDSS: 41V~60V SO-8 T&R 2
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
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Product details
Overview
DMT6006LSS from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-efficiency power conversion with RDS(ON) = 6.5 mΩ @ VGS = 10 V and 10 mΩ @ VGS = 4.5 V, rated for 14.6 A continuous drain current at TA = +25°C, and used in synchronous rectification stages of DC-DC converters.
For engineers reviewing the DMT6006LSS datasheet, DMT6006LSS pinout, DMT6006LSS application, or DMT6006LSS equivalent, key selection criteria include low RDS(ON) at 4.5 V gate drive, 100% production-tested UIS robustness, thermal resistance RθJA = 60.1 °C/W on 2 oz copper PCB, and SO-8 footprint compatibility with standard layout guidelines.
Technical Context
This MOSFET employs trench-gate silicon process technology to achieve low conduction loss while maintaining fast switching performance: tD(ON) = 6.0 ns, tF = 7.8 ns, and Qg = 34.9 nC at VGS = 10 V. Its body diode exhibits tRR = 35.8 ns and QRR = 40.2 nC under IF = 10 A, di/dt = 100 A/µs conditions.
The device supports operation across –55°C to +150°C junction temperature range, with normalized RDS(ON) variation ≤1.8× over that range at VGS = 10 V. Gate threshold voltage VGS(TH) is tightly distributed (1.3–2.5 V), ensuring stable turn-on behavior in digitally controlled power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source blocking voltage without breakdown, suitable for 48 V input bus systems. |
| RDS(ON) @ 10 V | 6.5 mΩ - Enables <1 W conduction loss at 12 A, critical for high-current synchronous rectifier designs. |
| RDS(ON) @ 4.5 V | 10 mΩ - Ensures usable on-resistance with 5 V logic-level gate drive, supporting controller ICs without dedicated gate drivers. |
| ID (max, 25°C) | 14.6 A - Continuous current rating on thermally enhanced FR-4 PCB (2 oz Cu, 1″² thermal pad), defining safe DC load capacity. |
| Ciss | 2162 pF - Input capacitance determines gate drive energy requirement and impacts switching loss in hard-switched topologies. |
| EAS | 40.7 mJ - Avalanche energy rating validated per production UIS test, enabling reliable operation under inductive switching stress. |
| RθJA (enhanced) | 60.1 °C/W - Thermal resistance on optimized PCB layout, allowing ~34 W power dissipation before reaching 150°C junction limit. |
Pinout & Package
Package: SO-8 surface-mount plastic package with matte tin annealed terminals, UL 94V-0 rated molding compound, moisture sensitivity level 1, and 0.076 g mass.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Source (S) | Four parallel source pins reduce parasitic inductance and improve current sharing in high-di/dt applications. |
| 5, 6, 7, 8 | Drain (D) | Four parallel drain pins provide low-inductance connection to power plane and support high pulsed current (IDM = 110 A). |
| Gate (pin 1 side marker) | Control terminal | Single gate pin located adjacent to source; requires <35 nC total charge for full enhancement, compatible with standard PWM controllers. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees avalanche ruggedness up to IAS = 28.5 A and EAS = 40.7 mJ, eliminating need for external snubbers in flyback or buck-boost converters. |
| Low RDS(ON) @ 4.5 V | 10 mΩ enables efficient operation with 5 V microcontroller or PWM IC outputs, reducing system BOM count and board space. |
| Fast switching speed | tF = 7.8 ns and Qgd/Qgs ratio of ~1.2 minimize Miller plateau time, improving efficiency in >500 kHz switching applications. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br, <900 ppm Cl, <1000 ppm Sb) meets automotive and industrial environmental compliance mandates. |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, multiphase buck converter supplying CPU core voltage in data center servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–1000 kHz with 12–15 A per phase. Use Value: 6.5 mΩ RDS(ON) minimizes conduction loss in high-duty-cycle operation, directly improving VRM efficiency by ≥0.5% at full load. |
Use Scenario: Isolated 24 V to 5 V/12 V DC-DC module for PLC I/O modules and motor drives. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or LLC resonant topology. Use Value: 10 mΩ RDS(ON) at 4.5 V gate drive allows direct control from UC384x-series controllers, eliminating auxiliary bias winding. |
| Automotive Body Control Module | Telecom PoE PD Converter |
Use Scenario: 12 V input buck regulator powering infotainment head unit subsystems. IC Role / Device Role / Timing Role: High-side or low-side switch in 300–600 kHz switching regulator with AEC-Q101 qualification path available. Use Value: –55°C to +150°C operating range and 100% UIS testing ensure reliability in under-hood thermal cycling environments. |
Use Scenario: 48 V to 12 V/5 V power supply in IEEE 802.3at/af Powered Device equipment. IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or secondary-side rectifier in flyback. Use Value: Coss = 761 pF and Crss = 58 pF enable ZVS operation in resonant topologies, reducing EMI and improving light-load efficiency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6006LPS-13 | Same die, but in PowerSO-8 package with exposed thermal pad; RθJC = 2.5 °C/W vs. 6.5 °C/W for DMT6006LSS. | Better thermal performance in high-power density designs where PCB real estate permits thermal pad soldering. | Select when junction-to-case thermal resistance must be <3 °C/W and board layout supports thermal pad reflow. |
| SiR872DP-T1-GE3 | 60 V, 5.2 mΩ @ 10 V, 18 A ID, but higher Qg = 42 nC and larger SO-8 variant (PowerPAK SO-8); not RoHS-3 halogen-free. | Higher current rating suits 20 A+ applications, but slower switching and non-green material restrict use in eco-sensitive designs. | Choose only if peak current exceeds 14.6 A and halogen-free compliance is not required. |
Compared with DMT6006LSS, DMT6006LPS-13 delivers superior thermal management for sustained high-current operation, while SiR872DP-T1-GE3 trades lower RDS(ON) for higher gate charge and relaxed environmental compliance-making DMT6006LSS optimal for cost-sensitive, green-design, mid-power DC-DC applications.
Availability
DMT6006LSS is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and automotive body control modules requiring stable component supply, consistent SO-8 footprint availability, and long-term lifecycle support.
Supply support for DMT6006LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMT6006LSS belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, medium-voltage power conversion in space-constrained applications where low RDS(ON), fast switching, and production-validated ruggedness are essential.
FAQ
What is the maximum recommended gate-source voltage for DMT6006LSS?
The absolute maximum VGS rating is ±20 V. Operation above ±12 V does not improve RDS(ON) significantly beyond 10 V, and prolonged exposure to >15 V increases gate oxide stress risk. For reliable long-term performance, maintain VGS between 4.5 V and 10 V in normal operation.
Can DMT6006LSS be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(ON) (normalized increase to 1.8× from –55°C to +150°C) ensures inherent current sharing stability. Layout symmetry and matched gate drive paths are required; derate total current by 15% versus sum of individual ratings to account for thermal coupling.
Is DMT6006LSS qualified to AEC-Q101 for automotive use?
The base DMT6006LSS is not AEC-Q101 qualified, but Diodes offers an automotive-grade variant (DMT6006LSSQ-13) with PPAP documentation, IATF 16949 manufacturing, and full AEC-Q101 stress testing. Standard DMT6006LSS may be used in non-safety-critical automotive modules pending internal qualification.
What is the safe operating area (SOA) limitation at 100 µs pulse width?
At 100 µs pulse width and TC = 25°C, the SOA curve limits VDS to ~42 V at 14.6 A. This reflects RDS(ON)-limited conduction boundary-not avalanche or thermal limits-ensuring single-pulse reliability under transient overload conditions typical in DC-DC startup or fault recovery.
DMT6006LSS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 11.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 34.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2162 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.38W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
DMT6006LSS-13 FAQ
1.How can I place an order for DMT6006LSS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6006LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6006LSS-13 reliable?
The price and inventory of DMT6006LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6006LSS-13 is usually 5 days.
3.What payment methods are accepted for DMT6006LSS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6006LSS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6006LSS-13?
DMT6006LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6006LSS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6006LSS-13?
For technical support, including DMT6006LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6006LSS-13 requirements.
6.How does Aetrix verify that DMT6006LSS-13 is sourced from the original manufacturer or authorized distributors?
All DMT6006LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6006LSS-13 meets industry standards.
7.What is the process for return or replacement of DMT6006LSS-13?
All DMT6006LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6006LSS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6006LSS-13 part is unused and in its original packaging.
Return procedure for DMT6006LSS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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