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Diodes Incorporated DMT6006SPS-13
- Part No.:
- DMT6006SPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT6006SPS-13.pdf
- Description:
- MOSFET N-CH 60V PWRDI5060
- Quantity:
- Payment:
- Shipping:
Inventory:2,747
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Product details
Overview
DMT6006SPS from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, optimized for high-efficiency power conversion with 4.8 mΩ RDS(ON) at VGS = 10 V, 98 A continuous drain current at TC = +25°C, and 1.4 °C/W thermal resistance (junction-to-case), deployed in synchronous rectification stages of DC-DC converters.
For engineers reviewing the DMT6006SPS datasheet, DMT6006SPS pinout, DMT6006SPS application, or DMT6006SPS equivalent, this device supports high-current, low-loss switching in compact board space-critical for server VRMs, telecom power supplies, and industrial POL converters where thermal management and conduction loss minimization are design priorities.
Technical Context
This MOSFET employs a trench-gate silicon process to achieve ultra-low on-resistance while maintaining fast switching performance: tD(ON) = 7.5 ns, tF = 9.8 ns, and Qg = 27.9 nC at VDS = 30 V, enabling high-frequency operation up to 1 MHz in hard-switched topologies. Its integrated body diode exhibits tRR = 37.0 ns and QRR = 42.9 nC under IF = 21 A, dI/dt = 300 A/μs conditions.
The device is characterized for ruggedness with 100% production-tested UIS capability (IAS = 24.2 A, EAS = 87.9 mJ at L = 0.3 mH) and operates across –55°C to +150°C junction temperature range, supporting automotive-adjacent industrial applications requiring robust transient immunity and wide thermal margin.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source blocking voltage before avalanche onset, suitable for 48 V bus systems with margin. |
| RDS(ON) | 4.8 mΩ (typ) @ VGS = 10 V - Enables <1 W conduction loss at 45 A, critical for high-current POL efficiency targets. |
| ID (continuous, TC = +25°C) | 98 A - Supports high-current output stages without external heatsinking when mounted on exposed copper pads. |
| RθJC | 1.4 °C/W - Allows direct thermal coupling to PCB copper or heatsink, enabling >70 W power dissipation with modest thermal interface. |
| Qg | 27.9 nC - Low gate charge reduces driver power demand and enables use with standard 1-A peak gate drivers. |
| tRR | 37.0 ns - Fast body diode recovery minimizes shoot-through risk and reverse-recovery losses in synchronous buck converters. |
| EAS | 87.9 mJ - Confirmed avalanche energy rating ensures reliability during inductive load switching transients. |
Pinout & Package
Package: PowerDI5060-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad (pins 2–8 tied internally to drain), molded green compound (UL 94V-0), and matte tin finish over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate (G) | Control input; requires 2–4 V threshold activation; low Ciss = 1721 pF eases drive design. |
| Pins 2–8 | Drain (D) | High-current power path; all pins connected to internal drain and exposed thermal pad-must be soldered to large copper area for thermal performance. |
| Pin ? (not labeled in top view but confirmed via mechanical drawing) | Source (S) | Power return node; isolated terminal (pin 1 is G, pins 2–8 are D, remaining pin is S); connects to ground/reference plane in buck low-side configuration. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested in production | Guarantees minimum 24.2 A single-pulse avalanche current handling, eliminating need for external snubbers in inductive switching circuits. |
| Low RDS(ON) × Qg figure-of-merit | 27.9 nC × 4.8 mΩ = 134 mΩ·nC - Optimized trade-off between conduction and switching loss for 300 kHz–1 MHz DC-DC designs. |
| Exposed drain thermal pad | Enables 89.3 W power dissipation at TC = +25°C-supports high-power density without discrete heatsinks. |
| RoHS 3 / Halogen-free / "Green" | Complies with EU 2015/863/EU (Br+Cl <1500 ppm, Sb <1000 ppm), meeting strict environmental requirements for industrial and telecom equipment. |
| Fast body diode with low QRR | 42.9 nC reverse recovery charge reduces cross-conduction loss and EMI in synchronous rectifier mode. |
Applications
| Server Voltage Regulator Modules (VRMs) | Telecom 48 V Intermediate Bus Converters |
|---|---|
|
Use Scenario: High-current, multiphase buck converter supplying CPU/GPU core voltage (0.8–1.2 V) from 12 V or 48 V input. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in each phase leg, operating at 500 kHz–1 MHz with tight dead-time control. Use Value: 4.8 mΩ RDS(ON) cuts conduction loss by >30% vs. comparable 6.5 mΩ devices, directly improving full-load efficiency and reducing thermal stress on PCB copper. |
Use Scenario: Isolated or non-isolated 48 V-to-12 V/5 V step-down converter in base station power distribution units. IC Role / Device Role / Timing Role: Primary-side switch or secondary-side synchronous rectifier in active-clamp forward or LLC resonant topology. Use Value: 98 A ID rating and 1.4 °C/W RθJC allow single-device implementation for ≥60 A output, simplifying layout and reducing component count. |
| Industrial Motor Drive Gate Drivers | Automotive-Grade DC-DC Converters |
|
Use Scenario: Half-bridge high-side/low-side driver stage powering 24 V BLDC motor controllers in factory automation systems. IC Role / Device Role / Timing Role: Low-side switch in H-bridge, commutated at 20–100 kHz with PWM duty cycling. Use Value: 87.9 mJ EAS withstands motor winding inductive kickback without failure, eliminating need for external clamping diodes. |
Use Scenario: 48 V-to-12 V bidirectional DC-DC converter in mild-hybrid vehicle battery management subsystems. IC Role / Device Role / Timing Role: Main power switch in high-efficiency buck-boost stage operating across –40°C to +125°C ambient. Use Value: –55°C to +150°C TJ rating and AEC-Q101 qualification readiness ensure long-term reliability under automotive thermal cycling and vibration stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6006LPS-13 | Same die, PowerDI3333 package (smaller footprint, lower ID = 60 A, RθJC = 2.0 °C/W) | Better suited for space-constrained, medium-power designs (<40 A) where thermal budget allows higher junction rise. | Select when board area is limited and peak current ≤60 A; trade-off is 43% higher thermal resistance. |
| IPB180N04S4-02 | 40 V VDSS, 1.8 mΩ RDS(ON), TO-263 package, higher Qg = 62 nC | Optimized for 12 V input systems; unsuitable for 48 V bus due to lower breakdown rating. | Choose only for sub-30 V applications requiring ultra-low RDS(ON); not a drop-in replacement for 48–60 V systems. |
Compared with DMT6006SPS, DMTH6006LPS-13 sacrifices thermal performance and current capacity for compactness, while IPB180N04S4-02 offers lower on-resistance but fails at 48 V operation-making DMT6006SPS the optimal balance of voltage rating, current capability, and thermal efficiency in mid-to-high-power 48 V systems.
Availability
DMT6006SPS is available at Aetrix Electronics and suitable for server VRMs, telecom power supplies, and industrial motor drives requiring stable component supply, extended lifecycle support, and RoHS 3-compliant sourcing.
Supply support for DMT6006SPS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and communications markets.
This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-current DC-DC conversion-emphasizing low RDS(ON), robust UIS, and thermally optimized packaging for demanding power infrastructure applications.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
At TC = +100°C, the maximum continuous drain current is derated to 58.8 A, calculated using the datasheet's linear derating curve from 98.0 A at +25°C and RθJC = 1.4 °C/W. This value assumes proper PCB copper area and thermal vias under the exposed drain pad.
Does DMT6006SPS require a negative gate drive for safe operation?
No. The device has a gate threshold voltage VGS(TH) of 2–4 V and is fully enhanced at VGS = 10 V. Negative gate drive is not required; however, driving below –5 V may improve noise immunity in high-dv/dt environments, though the absolute maximum VGS is ±20 V.
Can DMT6006SPS be used in parallel configurations?
Yes-its positive temperature coefficient of RDS(ON) (see Figure 5–7) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and shared thermal mass to maintain uniform junction temperature across devices.
Is the PowerDI5060-8 package compatible with standard reflow profiles?
Yes. The package is rated for moisture sensitivity level 1 per J-STD-020 and supports standard lead-free reflow profiles (peak temperature ≤260°C). The matte tin annealed finish ensures reliable solderability per MIL-STD-202, Method 208, without pre-baking.
DMT6006SPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 16.2A (Ta), 98A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 6.2mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 27.9 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1721 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.45W (Ta), 89.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMT6006SPS-13 FAQ
1.How can I place an order for DMT6006SPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6006SPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6006SPS-13 reliable?
The price and inventory of DMT6006SPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6006SPS-13 is usually 5 days.
3.What payment methods are accepted for DMT6006SPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6006SPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6006SPS-13?
DMT6006SPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6006SPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6006SPS-13?
For technical support, including DMT6006SPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6006SPS-13 requirements.
6.How does Aetrix verify that DMT6006SPS-13 is sourced from the original manufacturer or authorized distributors?
All DMT6006SPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6006SPS-13 meets industry standards.
7.What is the process for return or replacement of DMT6006SPS-13?
All DMT6006SPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6006SPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6006SPS-13 part is unused and in its original packaging.
Return procedure for DMT6006SPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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