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Diodes Incorporated DMT6007LFG-13
- Part No.:
- DMT6007LFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6007LFG-13.pdf
- Description:
- MOSFET N-CH 60V 15A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:4,727
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Product details
Overview
DMT6007LFG-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in POWERDI®3333-8 package, rated for 60V VDSS, 6 mΩ RDS(ON) @ 10V VGS, and 80A ID at TC = +25°C. It delivers low conduction loss and high pulsed current capability (80A IDM), optimized for synchronous rectification in DC-DC converters.
For engineers reviewing the DMT6007LFG-13 datasheet, DMT6007LFG-13 pinout, DMT6007LFG-13 application, or DMT6007LFG-13 equivalent, key selection criteria include RDS(ON) at 4.5V (8.5 mΩ), Qgd × RDS(ON) figure-of-merit, AEC-Q101 qualification, thermal resistance RθJC = 2°C/W, and 100% UIS-rated avalanche ruggedness.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve ultra-low RDS(ON) while maintaining fast switching performance. Its gate charge profile (Qg = 41.3 nC @ 10V, Qgd = 8.8 nC) supports high-frequency operation in buck and multiphase converters.
The device integrates a robust body diode with tRR = 35.4 ns and QRR = 38.2 nC, enabling efficient reverse recovery in synchronous rectifier topologies. Thermal design is enabled by RθJC = 2°C/W and a thermally enhanced POWERDI®3333-8 package with exposed drain pad.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche onset; suitable for 48V bus and 12V/24V intermediate bus converters. |
| RDS(ON) @ 10V | 6 mΩ - Enables ≤48 mW conduction loss at 20A; critical for high-current output stages. |
| RDS(ON) @ 4.5V | 8.5 mΩ - Ensures low-loss operation with 5V gate drive, supporting logic-level controller compatibility. |
| ID (TC = 25°C) | 80 A - Continuous drain current rating at case temperature; defines maximum steady-state power delivery capacity. |
| EAS | 20 mJ - Single-pulse avalanche energy rating; guarantees ruggedness against inductive switching transients. |
| RθJC | 2 °C/W - Junction-to-case thermal resistance; enables direct heatsinking via exposed drain pad for high-power density layouts. |
| Qgd | 8.8 nC - Gate-drain charge; directly impacts Miller plateau duration and switching loss in hard-switched applications. |
Pinout & Package
Package: POWERDI®3333-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad, 3.3 mm × 3.3 mm footprint, and 0.8 mm height. Molded green compound, UL 94V-0 rated, MSL Level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain) | Drain (common connection) | All pins 1–8 are internally connected to the drain terminal and exposed copper pad; provides low-inductance, high-current path and primary thermal conduction path. |
| Source (S) | Source | Terminal 1 is marked with green dot; source connects to internal source metallization and serves as reference for gate drive and current sensing. |
| Gate (G) | Gate | Terminal 2 is gate input; requires controlled drive strength due to Qg = 41.3 nC @ 10V to minimize switching loss and EMI. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 8.5 mΩ - Reduces conduction loss in 5V-gate-drive systems without requiring bootstrap or level-shift circuitry. |
| AEC-Q101 qualified | Qualified for automotive-grade reliability - supports under-hood and ADAS power modules requiring extended temperature and stress validation. |
| 100% UIS rated | 20 mJ avalanche energy - Eliminates need for external snubbers in flyback or LLC resonant converter secondary-side rectification. |
| Green, halogen-free construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets global environmental compliance mandates including RoHS 2 and JEDEC J-STD-020 MSL Level 1. |
| Thermal efficiency | RθJC = 2°C/W - Allows >30W continuous dissipation with minimal case-to-heatsink delta-T, enabling compact PCB-mounted thermal solutions. |
Applications
| Server VRM Output Stage | Automotive DC-DC Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency buck converter delivering 12V@60A to CPU/GPU core rails in data center servers. IC Role / Device Role / Timing Role: Primary synchronous rectifier MOSFET in multiphase topology, operating at 300–600 kHz with 10V gate drive. Use Value: 6 mΩ RDS(ON) reduces conduction loss by >40% vs. legacy 10 mΩ devices, improving full-load efficiency by 1.2% and lowering thermal load on VRM heatsinks. |
Use Scenario: 12V-to-5V/3.3V step-down converter powering infotainment ECUs and ADAS camera modules in vehicles. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or forward converter, driven by transformer-coupled gate signal. Use Value: AEC-Q101 qualification and 20 mJ EAS ensure reliable operation during load dump and cold-crank events where VIN surges to 40V+. |
| LCD Backlight Boost Driver | Industrial PoE PD Converter |
|
Use Scenario: High-brightness LED backlight driver in commercial displays using boost topology with 40–60V output. IC Role / Device Role / Timing Role: Low-side switch in boost converter power stage, switching at 500 kHz with 4.5V gate drive from integrated controller. Use Value: 8.5 mΩ RDS(ON) @ 4.5V minimizes dropout and improves regulation margin across wide input range (9–24V), extending LED lifetime. |
Use Scenario: Powered Device (PD) interface in IEEE 802.3af/at-compliant industrial Ethernet switches supplying up to 30W. IC Role / Device Role / Timing Role: Hot-swap MOSFET and DC-DC primary switch in single-stage PD converter with integrated detection/classification. Use Value: 60V VDSS withstands PoE surge transients (up to 57V), while low Qgd × RDS(ON) FOM ensures stable operation under dynamic load steps typical of IP cameras and sensors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6007LPS-13 | Same RDS(ON) (6 mΩ @ 10V) but in PowerDI™5060 package; RθJA = 40°C/W vs. 55°C/W; higher ID = 100A. | Requires larger board area (5.0 × 6.0 mm); better suited for forced-air-cooled industrial supplies than space-constrained consumer designs. | Select when higher continuous current and lower junction-to-ambient thermal resistance are prioritized over footprint size. |
| IPB052N06N3 G | 60V, 5.2 mΩ @ 10V, PG-HSOF-8 package; RθJC = 1.5°C/W; no AEC-Q101 rating. | Higher thermal performance but lacks automotive qualification; not recommended for automotive safety-critical subsystems. | Choose for non-automotive high-efficiency server or telecom PSUs where AEC-Q101 is unnecessary and thermal headroom is critical. |
Compared with DMTH6007LPS-13 and IPB052N06N3 G, DMT6007LFG-13 uniquely balances ultra-small 3.3×3.3 mm footprint, AEC-Q101 compliance, and 2°C/W RθJC-making it optimal for space- and reliability-constrained automotive and portable power applications.
Availability
DMT6007LFG-13 is available at Aetrix Electronics and suitable for server VRMs, automotive DC-DC converters, and LCD backlight drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101-qualified parts.
Supply support for DMT6007LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal ICs, with design and manufacturing operations across Asia and the Americas.
The DMT6007LFG belongs to Diodes' high-performance Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in automotive, computing, and industrial applications.
FAQ
What is the maximum continuous drain current at TA = +70°C?
The DMT6007LFG-13 supports 12 A continuous drain current at ambient temperature +70°C, derated from 15 A at +25°C per its RθJA = 55°C/W rating on standard FR-4 PCB with 1-inch² copper. This value assumes no forced airflow and reflects safe operation without exceeding TJ = 150°C.
Is the body diode suitable for synchronous rectification without external control?
No-the body diode is not intended for uncontrolled rectification. The device is designed for active gate-driven synchronous rectification, where external controller timing precisely manages gate turn-on/turn-off to avoid shoot-through and leverage the low RDS(ON) advantage. Body diode conduction should be minimized.
Does the POWERDI®3333-8 package require special PCB layout considerations?
Yes-thermal performance depends on proper soldering of all eight drain pins and the exposed pad to a minimum 100 mm² copper pour with ≥4 thermal vias (0.3 mm diameter) to inner ground planes. Pad layout must follow Diodes AP02001 guidelines to ensure mechanical reliability and RθJC < 2.5°C/W.
How does the 100% UIS rating impact system-level design?
The 20 mJ guaranteed avalanche energy allows the MOSFET to safely absorb inductive energy spikes during abnormal conditions-such as controller failure or short-circuit events-without catastrophic failure. This eliminates need for external clamping components in many DC-DC and motor drive applications, reducing BOM count and board area.
DMT6007LFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 15A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2090 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 62.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMT6007LFG-13 FAQ
1.How can I place an order for DMT6007LFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6007LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6007LFG-13 reliable?
The price and inventory of DMT6007LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6007LFG-13 is usually 5 days.
3.What payment methods are accepted for DMT6007LFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6007LFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6007LFG-13?
DMT6007LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6007LFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6007LFG-13?
For technical support, including DMT6007LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6007LFG-13 requirements.
6.How does Aetrix verify that DMT6007LFG-13 is sourced from the original manufacturer or authorized distributors?
All DMT6007LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6007LFG-13 meets industry standards.
7.What is the process for return or replacement of DMT6007LFG-13?
All DMT6007LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6007LFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6007LFG-13 part is unused and in its original packaging.
Return procedure for DMT6007LFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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