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Diodes Incorporated DMT6008LFG-13
- Part No.:
- DMT6008LFG-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6008LFG-13.pdf
- Description:
- MOSFET N-CH 60V 13A PWRDI3333
- Quantity:
- Payment:
- Shipping:
Inventory:185
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Product details
Overview
DMT6008LFG-13 from Diodes Incorporated is an N-channel enhancement-mode MOSFET in POWERDI®3333-8 package, rated for 60V V(BR)DSS, 7.5mΩ RDS(ON) @ 10V VGS, and 60A ID at TC = +25°C. It delivers low conduction loss and high switching efficiency, optimized for synchronous rectification and DC-DC converter power stages in compact industrial and automotive power supplies.
For engineers reviewing the DMT6008LFG-13 datasheet, DMT6008LFG-13 pinout, DMT6008LFG-13 application, or DMT6008LFG-13 equivalent, key selection criteria include its 4.5V gate drive capability (11.5mΩ RDS(ON)), 100% UIS-rated ruggedness, AEC-Q101 qualification, and thermally efficient 3333 footprint occupying only 33% board area vs. SO-8.
Technical Context
This MOSFET employs advanced trench-gate silicon technology to achieve a balanced figure-of-merit (Qgd × RDS(ON) = 7.8nC × 7.5mΩ ≈ 58.5 mΩ·nC), enabling fast switching with minimal Miller-induced turn-off delay. Its gate threshold voltage (0.7–2.0V) supports direct logic-level drive from 3.3V/5V controllers.
The device integrates ESD protection on gate terminals and features a robust body diode with 0.9–1.2V forward voltage at 20A, supporting bidirectional current handling in buck-boost and LLC resonant topologies. Thermal resistance RθJC = 3°C/W ensures effective heat transfer to PCB copper when mounted per recommended pad layout AP02001.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60V - Withstands up to 60V drain-source blocking voltage before avalanche onset, suitable for 48V bus and 12V/24V input DC-DC stages. |
| RDS(ON) max | 7.5mΩ @ VGS = 10V - Enables <0.3W conduction loss at 20A, critical for high-current synchronous rectifier designs. |
| ID max (TC = +25°C) | 60A - Continuous drain current rating under heatsink-cooled conditions, defining maximum safe steady-state power delivery. |
| Qg total | 50.4nC @ VGS = 10V - Gate charge determines driver strength requirement and switching loss; enables efficient operation at 300–500kHz. |
| EAS | 25mJ - Avalanche energy rating confirms single-pulse ruggedness during transient overvoltage events without failure. |
| RθJC | 3°C/W - Low junction-to-case thermal resistance allows direct thermal coupling to PCB copper pour or heatsink, improving thermal margin. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and UHAST, supporting under-hood applications. |
Pinout & Package
Package: POWERDI®3333-8 - Thermally enhanced surface-mount package with exposed drain paddle, 3.3mm × 3.3mm footprint, 0.8mm height, and matte tin-plated copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4 | Drain (D) | Four parallel drain terminals connected to internal die paddle - provide low-inductance, high-current path and primary thermal conduction path to PCB. |
| 5, 6, 7 | Source (S) | Three source terminals tied to source metallization - reduce source inductance and improve current sharing in high-di/dt switching. |
| 8 | Gate (G) | Single gate input with integrated ESD protection diode - requires ≤12V gate drive; compatible with standard PWM controllers and gate drivers. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V | 11.5mΩ - Enables use with 3.3V/5V microcontrollers and PMICs without level-shifting, reducing BOM count and layout complexity. |
| Small form factor | 3.3mm × 3.3mm footprint - occupies only 33% of SO-8 area, enabling higher power density in space-constrained modules like PoL converters. |
| 100% UIS rated | 13A IAS / 25mJ EAS - Guarantees reliable operation under inductive switching stress without derating, eliminating need for external snubbers in many cases. |
| ESD protected gate | ±10μA IGSS max - Integrated gate oxide protection withstands >2kV HBM, improving assembly yield and field reliability in automated manufacturing. |
| Green construction | Halogen- and antimony-free, RoHS-compliant - Meets IPC-1752A material declaration requirements for automotive and industrial OEM compliance reporting. |
Applications
| Server VRM Power Stage | Automotive ADAS Camera Power Supply |
|---|---|
Use Scenario: High-efficiency 12V-to-1V buck converter delivering up to 60A to CPU/GPU cores in data center servers. IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 400–600kHz with 4.5V gate drive from multiphase controller. Use Value: 7.5mΩ RDS(ON) reduces conduction loss by ~35% versus comparable SO-8 MOSFETs, lowering thermal load on VRM heatsink. |
Use Scenario: Compact 5V-to-3.3V DC-DC module powering image sensor and ISP in rear-view camera ECU. IC Role / Device Role / Timing Role: Primary high-side switch in buck regulator, AEC-Q101 qualified for under-hood ambient temperatures up to +105°C. Use Value: 3.3mm × 3.3mm footprint enables full power stage integration into 12mm × 12mm PCB area, meeting tight mechanical constraints. |
| Industrial PLC I/O Module | USB-C PD Fast Charging Adapter |
Use Scenario: 24V input isolated flyback secondary-side synchronous rectifier in programmable logic controller I/O power supply. IC Role / Device Role / Timing Role: Low-VF body diode (0.9V @ 20A) and 100% UIS rating support continuous conduction mode with no external freewheeling diode. Use Value: Eliminates discrete Schottky, reducing component count and improving efficiency by 1.2% at full load. |
Use Scenario: 20V-to-5V buck converter in 65W USB-C PD adapter, operating at 300kHz with peak currents up to 49A. IC Role / Device Role / Timing Role: Main power switch with 11.5mΩ RDS(ON) @ 4.5V, driven directly from TI UCC28780 active clamp flyback controller. Use Value: Qgd × RDS(ON) = 58.5 mΩ·nC minimizes switching loss, enabling >94% efficiency at 230VAC input. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMTH6008LPS-13 | Same RDS(ON) specs but in PowerPAK® SO-8 package; RθJA = 40°C/W vs. 58°C/W for DMT6008LFG-13. | Higher thermal resistance limits power density in ultra-compact layouts; requires larger copper area for same thermal performance. | Select when existing SO-8 footprint compatibility is required and board area is not constrained. |
| SiR626DP-T1-GE3 | 60V, 5.8mΩ @ 10V, but 40A ID rating and non-AEC-Q101; Qg = 42nC - lower gate charge but reduced current capacity. | Lacks automotive qualification and 60A current headroom; unsuitable for high-reliability ADAS or server VRM use. | Prefer for cost-sensitive consumer power adapters where AEC-Q101 and 60A rating are unnecessary. |
Compared with DMTH6008LPS-13 and SiR626DP-T1-GE3, DMT6008LFG-13 uniquely combines AEC-Q101 qualification, 60A current rating, and 3.3mm × 3.3mm footprint - making it the only option for space-constrained automotive and high-density server power stages requiring both ruggedness and miniaturization.
Availability
DMT6008LFG-13 is available at Aetrix Electronics and suitable for server VRM power stages, automotive ADAS camera supplies, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for DMT6008LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The DMT6008LFG belongs to Diodes' POWERDI® family of high-current, low-RDS(ON) MOSFETs engineered specifically for high-efficiency, space-constrained DC-DC conversion in automotive, industrial, and computing applications.
FAQ
What is the maximum gate-source voltage rating for DMT6008LFG-13?
The absolute maximum gate-source voltage (VGSS) is ±12V. Exceeding this rating risks permanent gate oxide damage. Recommended operating range is –10V to +10V for reliable switching; gate drive circuits must include clamping or limiting to stay within these limits during transients or shoot-through conditions.
Can DMT6008LFG-13 be used in synchronous rectification for a 48V input buck converter?
Yes - its 60V V(BR)DSS provides 20% margin above 48V nominal input, and 7.5mΩ RDS(ON) at 10V VGS ensures low conduction loss at typical output currents up to 60A. The device's 100% UIS rating also handles inductive kickback during light-load discontinuous conduction mode.
Is the POWERDI®3333-8 package lead-free and RoHS compliant?
Yes - DMT6008LFG-13 is fully lead-free and RoHS compliant per EU Directive 2011/65/EU, with matte tin annealed over copper leadframe. It is also halogen- and antimony-free ("Green" per Diodes' specification: Br+Cl <1500ppm, Sb <1000ppm), meeting IPC-1752A reporting requirements.
How does the thermal performance of DMT6008LFG-13 compare to SO-8 MOSFETs?
With RθJC = 3°C/W and RθJA = 58°C/W (on 1-inch² 2oz copper), DMT6008LFG-13 achieves significantly better junction-to-board thermal transfer than typical SO-8 devices (RθJC ≈ 5–6°C/W). Its exposed drain paddle and optimized pad layout (AP02001) enable up to 30% higher power density before thermal throttling occurs.
DMT6008LFG-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 13A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50.4 nC @ 10 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2713 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 41W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMT6008LFG-13 FAQ
1.How can I place an order for DMT6008LFG-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6008LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6008LFG-13 reliable?
The price and inventory of DMT6008LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6008LFG-13 is usually 5 days.
3.What payment methods are accepted for DMT6008LFG-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6008LFG-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6008LFG-13?
DMT6008LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6008LFG-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6008LFG-13?
For technical support, including DMT6008LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6008LFG-13 requirements.
6.How does Aetrix verify that DMT6008LFG-13 is sourced from the original manufacturer or authorized distributors?
All DMT6008LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6008LFG-13 meets industry standards.
7.What is the process for return or replacement of DMT6008LFG-13?
All DMT6008LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6008LFG-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6008LFG-13 part is unused and in its original packaging.
Return procedure for DMT6008LFG-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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