Diodes Incorporated DMT6009LFG-13

Overview

DMT6009LFG-13 from Diodes Incorporated is a 60V N-channel enhancement-mode power MOSFET in POWERDI®3333-8 package, optimized for high-efficiency DC-DC converters and backlighting power stages. It delivers R_DS(ON) = 10 mΩ @ V_GS = 10 V, 34 A continuous drain current at T_C = +25°C, and 100% rated avalanche energy (E_AS = 40.8 mJ), enabling robust synchronous rectification in automotive and industrial power supplies.

For engineers reviewing the DMT6009LFG-13 datasheet, DMT6009LFG-13 pinout, DMT6009LFG-13 application, or DMT6009LFG-13 equivalent, key selection criteria include its low Q_gd × R_DS(ON) figure-of-merit (FOM), AEC-Q101 qualification, thermally efficient 3.3 mm × 3.3 mm footprint, and 100% UIS-rated ruggedness under transient overvoltage stress.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low on-resistance while maintaining fast switching transitions. Its gate threshold voltage (V_GS(TH) = 0.7–2.0 V) supports both 4.5 V and 10 V drive logic, and its body diode exhibits t_RR = 18.2 ns with Q_RR = 33.1 nC under 400 A/μs di/dt - critical for minimizing shoot-through loss in synchronous buck topologies.

The device's thermal resistance R_θJC = 6.5°C/W enables high-power density mounting on compact PCBs, and its R_θJA = 60°C/W (FR-4, 2 oz Cu, 1-in² pad) reflects real-world board-level dissipation capability. The POWERDI3333-8 package integrates 4 drain terminals and 3 source terminals to reduce parasitic inductance and improve current sharing.

Key Specifications

Pinout & Package

Packaged in POWERDI®3333-8: surface-mount, thermally enhanced 8-pin plastic package with exposed drain paddle, 3.3 mm × 3.3 mm footprint, 0.8 mm nominal height, and matte tin-plated copper leadframe.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with DMT6009LFG-13, the -7 variant offers identical performance in smaller reels, while DMTH6009LPS-13 trades footprint size for 24% lower junction-to-case thermal resistance - making it preferable for thermally constrained 40+ A applications, whereas the POWERDI3333-8 remains optimal for space-limited 30–35 A designs.

Availability

DMT6009LFG-13 is available at Aetrix Electronics and suitable for automotive LED drivers, industrial 48 V DC-DC converters, and PoE++ powered device power supplies requiring stable component supply, AEC-Q101 compliance, and consistent R_DS(ON) performance across production lots.

Supply support for DMT6009LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' POWERDI® high-efficiency power transistor product line, engineered specifically for space-constrained, high-current DC-DC conversion in automotive, industrial, and communications infrastructure applications.

FAQ

What is the maximum gate-source voltage rating for DMT6009LFG-13?

The absolute maximum V_GS rating is ±16 V, as specified in the Maximum Ratings table. Operation beyond this range risks permanent gate oxide damage. For reliable 4.5 V logic-level drive, the gate threshold voltage (0.7–2.0 V) ensures strong turn-on while maintaining noise immunity against typical PCB coupling transients.

Does DMT6009LFG-13 require a gate resistor for standard PWM controller drive?

No external gate resistor is required for most applications due to its low intrinsic gate resistance (R_g = 1.7 Ω) and moderate total gate charge (Q_g = 33.5 nC @ 10 V). However, a 2–5 Ω series resistor is recommended to dampen potential gate ringing when driving from high-speed controllers with fast slew rates (>5 V/ns).

How does the POWERDI3333-8 package compare thermally to SO-8 for this MOSFET?

POWERDI3333-8 achieves R_θJC = 6.5°C/W versus ~10–12°C/W for standard SO-8, due to its exposed drain paddle and optimized copper leadframe. This 35–45% lower junction-to-case resistance allows 19.2 W dissipation at T_C = +25°C - significantly exceeding SO-8's typical 10–12 W limit under identical board conditions.

Is DMT6009LFG-13 suitable for linear-regulator operation?

No - it is not characterized or rated for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows DC limitation at V_DS < 5 V and I_D < 10 A, and prolonged linear use risks thermal runaway due to positive temperature coefficient of R_DS(ON). It is designed exclusively for switched-mode applications with defined duty cycles and pulse widths.