Diodes Incorporated DMT6009LFG-7
- Part No.:
- DMT6009LFG-7
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
DMT6009LFG-7.pdf
- Description:
- MOSFET N-CH 60V 11A PWRDI3333
- Quantity:
- Payment:

- Shipping:

Inventory:2,408
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
DMT6009LFG-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in POWERDI®3333-8 package, rated for 34A continuous drain current at TC = +25°C, with RDS(ON) of 10mΩ @ VGS = 10V and 11.7mΩ @ VGS = 4.5V. It delivers low conduction loss and high avalanche ruggedness (EAS = 40.8mJ), serving as a primary switching element in DC-DC converter power stages.
For engineers reviewing the DMT6009LFG-7 datasheet, DMT6009LFG-7 pinout, DMT6009LFG-7 application, or DMT6009LFG-7 equivalent, key selection criteria include its 6.5°C/W RθJC thermal resistance, 100% UIS-rated ruggedness, AEC-Q101 qualification, and optimized Qgd × RDS(ON) figure-of-merit for high-frequency synchronous buck topologies.
Technical Context
This MOSFET employs trench-gate silicon technology to achieve low RDS(ON) while maintaining fast switching transitions. Its gate threshold voltage (VGS(TH) = 0.7–2.0V) enables robust turn-on control with standard 4.5V logic-level drivers, and its Crss of 41pF minimizes Miller-induced shoot-through risk in hard-switched converters.
The device integrates a co-packaged body diode with VF = 1.2V @ IS = 20A and tRR = 18.2ns, supporting synchronous rectification and freewheeling in buck, boost, and flyback configurations. Its 19.2W power dissipation capability at TC = +25°C is enabled by the thermally enhanced POWERDI3333-8 leadframe design.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| V(BR)DSS | 60V - Withstands up to 60V drain-source blocking voltage before avalanche onset, suitable for 48V input systems. |
| RDS(ON) | 10mΩ @ VGS = 10V - Enables <0.34W conduction loss at 34A, critical for high-efficiency power stages. |
| ID (TC = +25°C) | 34A - Continuous current rating defined at case temperature, enabling high-power density designs. |
| EAS | 40.8mJ - Confirmed single-pulse avalanche energy rating ensures reliable operation under transient overvoltage stress. |
| RθJC | 6.5°C/W - Low junction-to-case thermal resistance allows direct heatsinking via exposed drain pad for thermal management. |
| Qgd | 5.3nC - Gate-drain charge directly impacts switching loss and dV/dt immunity in high-side applications. |
| AEC-Q101 | Qualified - Meets automotive-grade reliability requirements for under-hood and infotainment power supplies. |
Pinout & Package
Package: POWERDI®3333-8 - Thermally optimized 8-pin surface-mount package with exposed drain pad for low RθJC and high power density mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Seven parallel drain terminals connected to internal die and exposed thermal pad - provides low-inductance, high-current path and primary heat conduction route. |
| 5 | Gate (G) | Single gate input terminal - designed for low-capacitance drive (Ciss = 1925pF) and minimal gate charge (Qg = 33.5nC @ 10V). |
| - | Source (S) | Internally connected to pins 1–4 and 6–8 ground plane - forms return path for load current and reference for gate drive. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5V drive | 11.7mΩ - Enables full-load operation with 5V microcontroller GPIO or PMIC gate drivers without level-shifting. |
| Optimized FOM (Qgd × RDS(ON)) | 5.3nC × 10mΩ = 53 mΩ·nC - Balances switching loss and conduction loss for >1MHz DC-DC operation. |
| 100% UIS rated | IAS = 28.6A, EAS = 40.8mJ - Guarantees survivability during inductive load switching transients without derating. |
| AEC-Q101 qualified | Stress-tested per automotive reliability standards - supports deployment in ADAS power modules and infotainment DC/DCs. |
| Green, halogen-free construction | <900ppm Br/Cl, <1000ppm Sb - Complies with JEDEC J-STD-020 moisture sensitivity Level 1 and RoHS 2 directives. |
Applications
| Automotive Infotainment Power Supply | Industrial 48V DC-DC Converter |
|---|---|
|
Use Scenario: Step-down conversion from 48V battery rail to 5V/3.3V for display controllers and audio processors in vehicle head units. IC Role / Device Role / Timing Role: Primary high-side synchronous rectifier switch in a 500kHz buck converter stage. Use Value: 10mΩ RDS(ON) limits conduction loss to <0.3W at 15A, while AEC-Q101 qualification ensures 15-year field reliability. |
Use Scenario: High-density 48V-to-12V intermediate bus converter in programmable logic controller (PLC) backplanes. IC Role / Device Role / Timing Role: Low-side switch in interleaved dual-phase buck topology operating at 300kHz. Use Value: 6.5°C/W RθJC enables 19.2W dissipation without external heatsink, reducing board area by 35% vs. SO-8 alternatives. |
| LCD Backlight LED Driver | Server VRM High-Side Switch |
|
Use Scenario: Constant-current switching regulator driving 20–40 series-connected white LEDs in medical imaging displays. IC Role / Device Role / Timing Role: PWM-controlled main power switch modulating LED string current at 1–5kHz. Use Value: 11.7mΩ RDS(ON) at 4.5V gate drive allows direct interface with PWM controller ICs, eliminating gate driver ICs. |
Use Scenario: High-side switch in 12V input, 0.8V output multiphase VRM for Xeon-class CPUs in edge servers. IC Role / Device Role / Timing Role: Synchronous rectifier in phase-leg configuration with 1MHz switching frequency. Use Value: 41pF Crss and 5.3nC Qgd minimize dead-time losses and improve efficiency above 92% at full load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6009LSD-7 | Same die, but in smaller POWERDI®3333-6 package with only 6 pins (3×D, G, S, S) and higher RθJA (75°C/W). | Limited to lower-power applications (<12W) due to reduced thermal mass and no dedicated thermal pad connection. | Select when board space is constrained and power dissipation remains below 8W at TA = +70°C. |
| DMN6016LFG-7 | 60V, 16mΩ @ 10V, 25A ID, same POWERDI3333-8 package but lower current rating and 30.5mJ EAS. | Lower avalanche energy and current capacity make it unsuitable for high-stress industrial motor drives or automotive load dumps. | Choose where cost sensitivity outweighs peak current and ruggedness requirements, e.g., consumer AC-DC adapters. |
Compared with DMT6009LFG-7, DMT6009LSD-7 trades thermal performance for footprint reduction, while DMN6016LFG-7 reduces conduction loss margin and avalanche capability to meet lower-cost targets - both require revalidation of thermal layout and transient stress margins.
Availability
DMT6009LFG-7 is available at Aetrix Electronics and suitable for automotive infotainment power supplies, industrial 48V DC-DC converters, and LCD backlight LED drivers requiring stable component supply, long-term lifecycle support, and AEC-Q101-compliant sourcing.
Supply support for DMT6009LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
This device belongs to Diodes' POWERDI® high-current MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and computing applications where thermal density and ruggedness are critical.
FAQ
What is the maximum safe operating junction temperature for DMT6009LFG-7?
The absolute maximum junction temperature is +150°C, as specified in the datasheet's Operating and Storage Temperature Range. Derating begins above TJ = +125°C, and sustained operation above +135°C requires thermal modeling using the provided transient thermal resistance curve (Figure 13) and board-specific RθJA estimation.
Can DMT6009LFG-7 be used in a high-side switch configuration with 12V gate drive?
Yes - its ±16V gate-source voltage rating and 0.7–2.0V VGS(TH) ensure robust turn-on with 12V gate drive. However, gate drive must limit peak current to avoid exceeding the 1.7Ω gate resistance's thermal limits, and PCB layout must minimize gate loop inductance to suppress ringing during 33.5nC total gate charge transitions.
Is the POWERDI3333-8 package compatible with standard reflow profiles for lead-free soldering?
Yes - the device is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 20–40s above 217°C). The matte tin annealed copper leadframe ensures solderability per MIL-STD-202, Method 208, and the UL 94V-0 molding compound withstands thermal cycling without delamination.
Does DMT6009LFG-7 include integrated ESD protection on the gate terminal?
No - the datasheet does not specify on-chip ESD protection structures. Gate oxide integrity relies on external handling precautions and board-level TVS or RC snubbers. The ±100nA IGSS leakage at ±16V confirms gate oxide robustness, but system-level ESD design (IEC 61000-4-2) must be implemented externally per application requirements.
DMT6009LFG-7 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 11A (Ta), 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33.5 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1925 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.08W (Ta), 19.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- POWERDI3333-8
DMT6009LFG-7 FAQ
1.How can I place an order for DMT6009LFG-7 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6009LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6009LFG-7 reliable?
The price and inventory of DMT6009LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6009LFG-7 is usually 5 days.
3.What payment methods are accepted for DMT6009LFG-7?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6009LFG-7 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6009LFG-7?
DMT6009LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6009LFG-7 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6009LFG-7?
For technical support, including DMT6009LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6009LFG-7 requirements.
6.How does Aetrix verify that DMT6009LFG-7 is sourced from the original manufacturer or authorized distributors?
All DMT6009LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6009LFG-7 meets industry standards.
7.What is the process for return or replacement of DMT6009LFG-7?
All DMT6009LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6009LFG-7, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6009LFG-7 part is unused and in its original packaging.
Return procedure for DMT6009LFG-7:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
DMT6009LFG-7 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
