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Diodes Incorporated DMT6009LPS-13
- Part No.:
- DMT6009LPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT6009LPS-13.pdf
- Description:
- MOSFET N-CHA 60V 10.6A POWERDI
- Quantity:
- Payment:
- Shipping:
Inventory:2,826
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Product details
Overview
DMT6009LPS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI5060-8 package, designed for high-efficiency power management with RDS(ON) = 7.2 mΩ @ VGS = 10V, 87A continuous drain current at TC = +25°C, and low Qg = 33.5 nC - deployed in synchronous rectification and DC-DC converters.
For engineers reviewing the DMT6009LPS-13 datasheet, DMT6009LPS-13 pinout, DMT6009LPS-13 application, or DMT6009LPS-13 equivalent, key selection criteria include on-resistance at 4.5V gate drive (8.9 mΩ), body diode reverse recovery charge (QRR = 33.1 nC), thermal resistance RθJC = 1.1 °C/W, and PowerDI5060-8 package compatibility with high-current PCB layouts.
Technical Context
This MOSFET employs trench-gate silicon technology optimized for low conduction loss and fast switching in unidirectional power paths. Its 100% UIS-rated ruggedness supports reliable operation under inductive load transients without external snubbers.
The device features a thermally enhanced exposed drain pad for direct heatsinking, enabling high-power dissipation (PD = 113 W at TC = +25°C) while maintaining tight RDS(ON) temperature stability - normalized to 1.2× at TJ = 125°C under VGS = 4.5V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 48 V DC bus in industrial DC-DC converters with margin for transient spikes |
| RDS(ON) | 7.2 mΩ @ VGS = 10V - Enables <1.5 W conduction loss at 20 A output current in 12 V–48 V systems |
| Qg | 33.5 nC @ VGS = 10V - Supports >1 MHz switching in high-frequency SMPS without excessive gate driver power demand |
| ID (TC = +25°C) | 87 A - Sustains full-load current in compact 25 mm² thermal pad layouts with minimal copper area |
| RθJC | 1.1 °C/W - Delivers 100+ W power handling with <10°C junction-to-case rise under steady-state 80 A operation |
| tRR | 18.2 ns - Minimizes body diode reverse recovery loss during hard-switched synchronous rectification |
| EAS | 20.6 mJ - Withstands single-pulse avalanche energy from 0.1 mH inductors at 20.3 A peak current |
Pinout & Package
Package: PowerDI5060-8 - Thermally optimized 8-pin surface-mount package with exposed drain pad (pins 2, 4, 5, 6, 7, and 8 internally connected to drain); 5.15 mm × 6.15 mm footprint; 1.0 mm nominal height; RoHS-compliant matte tin finish over copper leadframe.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Primary current return path; electrically isolated from drain; connects to low-side reference plane |
| 2 | Drain | High-current power input/output node; tied to exposed thermal pad for heatsinking and current conduction |
| 3 | Gate | Control terminal requiring <2 V threshold activation; driven by dedicated gate driver to minimize Miller-induced shoot-through |
| 4–8 | Drain (parallel) | Multiple drain terminals reduce package inductance and distribute current across 6 pins for <100 A peak handling |
Key Features
| Feature | Design Value |
|---|---|
| 100% Unclamped Inductive Switching (UIS) rated | Validated to 20.3 A and 20.6 mJ - eliminates need for external clamping circuits in flyback and buck-boost topologies |
| Low Qgd/Qg ratio | Qgd = 5.3 nC / Qg = 33.5 nC = 15.8% - improves hard-switching immunity and reduces gate-drive-induced voltage overshoot |
| Thermally enhanced drain pad | Exposed copper pad occupies >65% of bottom surface - enables direct thermal interface to inner-layer copper or heatsink without via arrays |
| Halogen- and antimony-free "Green" construction | <900 ppm Br, <900 ppm Cl, <1000 ppm Sb - meets automotive and industrial environmental compliance without sacrificing thermal or electrical performance |
| JEDEC-qualified high-reliability grade | Qualified per AEC-Q101 stress test conditions - suitable for industrial power supplies requiring >10-year field life at 85°C ambient |
Applications
| Server VRM Output Stage | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: High-current, multiphase buck converter delivering 50–100 A at 0.8–1.2 V to CPU/GPU cores. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with 4.5 V gate drive. Use Value: 8.9 mΩ RDS(ON) at 4.5 V enables >95% efficiency at 80 A, reducing thermal load on 2-oz PCB copper layers. |
Use Scenario: 48 V–12 V isolated DC-DC module for factory automation I/O modules. IC Role / Device Role / Timing Role: Primary-side MOSFET in active clamp forward topology with 100 ns dead-time control. Use Value: 20.6 mJ EAS withstands leakage inductance spikes during clamp reset, eliminating snubber losses. |
| Telecom Rectifier Module | EV On-Board Charger Auxiliary Supply |
|
Use Scenario: 3 kW telecom rectifier with interleaved LLC resonant stages feeding 54 V battery bus. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped configuration with zero-voltage switching. Use Value: 18.2 ns tRR minimizes cross-conduction loss during commutation, improving light-load efficiency by 1.2%. |
Use Scenario: 1.5 kW auxiliary power supply converting 400 V DC battery to 12 V for vehicle control units. IC Role / Device Role / Timing Role: High-side switch in half-bridge driving isolated flyback transformer primary. Use Value: RθJC = 1.1 °C/W allows 87 A conduction within 110°C junction limit using only 2-layer thermal pad, reducing BOM cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6009LPSW-13 | Same die, PowerDI5060-8/SWP (Type UX) package with modified leadframe geometry and larger E2a dimension (4.395 mm vs. 3.48 mm) | Improved solder joint reliability under thermal cycling; slightly higher mounting height (0.735 mm vs. 0.61 mm) | Select for automotive-grade production where JEDEC MSL-1 and IATF 16949 traceability are required |
| DMTH6009LPS-13 | Same RDS(ON) and Qg, but TO-252-2L package (DPAK) with RθJA = 62 °C/W and ID = 60 A @ TC = +25°C | Limited to ≤60 A continuous; requires larger PCB area and external heatsink for equivalent thermal performance | Select when legacy DPAK footprint compatibility is mandatory and peak current stays below 60 A |
Compared with DMT6009LPS-13, DMT6009LPSW-13 offers identical electrical specs with enhanced mechanical robustness for automotive environments, while DMTH6009LPS-13 trades thermal performance and current rating for backward-compatible packaging - making the original PowerDI5060-8 variant optimal for space-constrained, high-current industrial designs.
Availability
DMT6009LPS-13 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, high-current capability, and JEDEC-qualified reliability.
Supply support for DMT6009LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance power management, signal integrity, and protection solutions for industrial, computing, and communications markets.
DMT6009LPS belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in compact form factors - targeting next-generation power conversion where thermal density and switching loss dominate design constraints.
FAQ
What is the maximum safe operating junction temperature for DMT6009LPS-13?
The absolute maximum junction temperature is +150°C, and the device is characterized for stable RDS(ON) performance up to this limit. Thermal design must ensure TJ remains ≤150°C under worst-case ambient and power dissipation conditions, using RθJC = 1.1 °C/W and verified PCB copper layout per Diodes' suggested pad dimensions.
Does DMT6009LPS-13 require a gate resistor for EMI control in 1 MHz switching applications?
Yes - a 2.2 Ω to 4.7 Ω gate resistor is recommended to dampen ringing caused by low Crss (41 pF) and high dV/dt, especially when driving with fast gate drivers. This limits peak gate current, suppresses oscillation near 100 MHz, and ensures clean turn-on/turn-off transitions without shoot-through risk.
Can DMT6009LPS-13 be used in parallel configurations for >100 A applications?
Yes - its positive temperature coefficient of RDS(ON) (normalized to 1.2× at 125°C) enables inherent current sharing. Parallel operation requires matched gate drive routing, symmetrical PCB layout, and individual gate resistors to prevent oscillatory imbalance; tested configurations show <5% current mismatch at 120 A total load.
Is the PowerDI5060-8 package compatible with standard reflow profiles for lead-free assembly?
Yes - the device is qualified to J-STD-020 Moisture Sensitivity Level 1 and supports standard Pb-free reflow profiles (peak 260°C, 10-second dwell). The matte tin annealed finish ensures reliable solder wetting, and the UL 94V-0 molding compound withstands repeated thermal excursions without delamination or warpage.
DMT6009LPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.6A (Ta), 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 33.5 nC @ 10 V
- Vgs (Max):
- ±16V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1925 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.3W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMT6009LPS-13 FAQ
1.How can I place an order for DMT6009LPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6009LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6009LPS-13 reliable?
The price and inventory of DMT6009LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6009LPS-13 is usually 5 days.
3.What payment methods are accepted for DMT6009LPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6009LPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6009LPS-13?
DMT6009LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6009LPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6009LPS-13?
For technical support, including DMT6009LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6009LPS-13 requirements.
6.How does Aetrix verify that DMT6009LPS-13 is sourced from the original manufacturer or authorized distributors?
All DMT6009LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6009LPS-13 meets industry standards.
7.What is the process for return or replacement of DMT6009LPS-13?
All DMT6009LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6009LPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6009LPS-13 part is unused and in its original packaging.
Return procedure for DMT6009LPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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