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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT6009LSS-13

Name: DMT6009LSS-13
Brand: Diodes Incorporated
SKU: DMT6009LSS-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT6009LSS-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: DMT6009LSS-13.pdf

Description:: MOSFET N-CH 60V 10.8A 8SO T&R 2

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Product details

Overview

DMT6009LSS from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in SO-8 package, optimized for high-efficiency DC-DC converters and LED backlighting. It delivers 9.5 mΩ R_DS(ON) at V_GS = 10 V, 10.8 A continuous drain current at T_A = +25°C, and features 100% production-tested UIS capability for robust inductive switching.

For engineers reviewing the DMT6009LSS datasheet, DMT6009LSS pinout, DMT6009LSS application, or DMT6009LSS equivalent, key selection criteria include its low R_DS(ON) at 4.5 V (12 mΩ), Q_gd × R_DS(ON) figure-of-merit, thermal resistance of 75 °C/W (with 1-inch² copper), and SO-8 lead-free RoHS-compliant packaging.

Technical Context

This MOSFET employs advanced trench-gate technology to simultaneously reduce conduction loss and switching loss. Its gate threshold voltage (0.7–2.0 V) enables compatibility with 3.3 V and 5 V logic-level drivers, while its low Q_gd (5.3 nC) and C_iss (1925 pF) support fast, efficient hard-switching operation in synchronous buck topologies.

The device integrates a robust body diode with t_RR = 18.2 ns and Q_RR = 33.1 nC, enabling reliable freewheeling in non-synchronous converters. Thermal design is supported by R_θJC = 12 °C/W and validated transient thermal response up to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Supports input rails up to 48 V nominal systems with margin for transients.
R_DS(ON) @ 10 V	9.5 mΩ max - Enables <1.0 W conduction loss at 10 A, critical for high-current power stages.
R_DS(ON) @ 4.5 V	12 mΩ max - Ensures usable on-resistance with standard 5 V gate drive, reducing driver complexity.
I_D (T_A = 25°C)	10.8 A - Sustains continuous load current in compact SO-8 footprint without forced cooling.
Q_g @ 10 V	33.5 nC - Determines gate drive power and switching speed; balances efficiency vs. EMI in 300–1000 kHz designs.
E_AS	31.5 mJ - Confirmed avalanche energy rating supports reliable operation under unclamped inductive switching stress.
R_θJA (1″² Cu)	75 °C/W - Defines thermal derating curve for PCB-level thermal management in industrial ambient conditions.

Pinout & Package

Package: SO-8 (Surface-mount, 8-pin small-outline integrated circuit), molded green plastic, UL 94V-0 rated, matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 0–20 V gate-source voltage; requires low-impedance drive due to 1.7 Ω gate resistance.
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations.
3 (D)	Drain	Main current path output; connected to input rail in low-side switch; thermally coupled to exposed pad (pins 4–8).
4–8 (D)	Drain (common)	Five parallel drain terminals forming thermal and current-carrying path; essential for heat dissipation in SO-8 layout.

Key Features

Feature	Design Value
100% UIS tested	Guarantees robustness against inductive turn-off stress without external snubbers in DC-DC converter flyback phases.
Low Q_gd × R_DS(ON)	5.3 nC × 9.5 mΩ = 50.4 mΩ·nC - Optimized for high-frequency switching efficiency in point-of-load regulators.
Halogen- and antimony-free	<900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Meets IPC-1752A Class 3 environmental compliance for automotive and industrial end equipment.
Thermal R_θJC = 12 °C/W	Enables direct heatsinking via PCB copper pour or clip attach, supporting >1.6 W steady-state power dissipation at case.

Applications

DC-DC Buck Converter

LED Backlight Driver

Use Scenario: High-current, high-efficiency step-down regulator supplying 3.3 V/5 V to microcontrollers and FPGAs in industrial PLCs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz with 10 A peak current.

Use Value: 9.5 mΩ R_DS(ON) reduces conduction loss by ~35% versus typical 15 mΩ alternatives, improving full-load efficiency by 1.2%.

Use Scenario: Constant-current LED string driver for automotive instrument clusters requiring PWM dimming up to 20 kHz.

IC Role / Device Role / Timing Role: High-side or low-side current sink switch controlling 8–12 LEDs in series at 350 mA–1 A.

Use Value: Fast t_F = 15.7 ns and low Q_RR minimize switching loss and audible noise during PWM transitions.

Power ORing Circuit

Hot-Swap Controller FET

Use Scenario: Redundant 12 V power supply selector in telecom base station line cards.

IC Role / Device Role / Timing Role: Ideal diode replacement in active ORing configuration with external controller feedback.

Use Value: Body diode V_SD = 0.9–1.2 V at 20 A enables low forward drop; R_DS(ON) ensures <50 mW conduction loss per FET.

Use Scenario: Inrush current limiting for 24 V industrial I/O modules during live insertion into backplane.

IC Role / Device Role / Timing Role: Main pass FET controlled by dedicated hot-swap IC to ramp V_DS linearly during startup.

Use Value: 60 V V_DSS and 25 A I_AS withstand fault currents during soft-start; SO-8 footprint simplifies layout near connector.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6009LSS-7	Same die, identical electrical specs; differs only in tape-and-reel packaging (1500 pcs vs. 2500 pcs).	No functional difference; used interchangeably where reel size affects SMT line setup time.	Select -7 for smaller batch builds or when feeder compatibility favors 1500-unit reels.
DMN6009LSS-13	Same SO-8 package and R_DS(ON), but rated for 60 V V_DSS with tighter V_GS(TH) min (1.0 V) and higher Q_g (36 nC).	Better gate drive margin at low V_GS; slightly higher switching loss in high-frequency designs.	Prefer DMN6009LSS-13 if driving from weak 3.3 V sources; retain DMT6009LSS-13 for optimal Q_gd × R_DS(ON) trade-off.

Compared with DMT6009LSS-13, the -7 variant offers identical performance in smaller reels, while DMN6009LSS-13 trades 8% higher gate charge for improved gate threshold consistency-making it preferable for marginal gate drive conditions but less optimal for high-frequency, low-loss designs.

Availability

DMT6009LSS is available at Aetrix Electronics and suitable for DC-DC converters, LED backlighting, and hot-swap circuits requiring stable component supply across industrial, telecom, and automotive electronics programs.

Supply support for DMT6009LSS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

This MOSFET belongs to Diodes' "PowerMOS" product line, engineered specifically for high-efficiency power conversion in space-constrained applications such as portable electronics, industrial power supplies, and automotive subsystems.

FAQ

What is the maximum safe operating temperature for DMT6009LSS?

The DMT6009LSS has a specified junction temperature range of –55°C to +150°C. Its absolute maximum rating is TJ = +150°C, and thermal derating begins at TA = +70°C for continuous operation. With RθJA = 75°C/W on a 1-inch² copper board, sustained 10.8 A operation requires ambient ≤55°C or active cooling.

Does DMT6009LSS support logic-level gate drive?

Yes-its gate threshold voltage VGS(TH) ranges from 0.7 V to 2.0 V, and it delivers 12 mΩ RDS(ON) at VGS = 4.5 V, making it fully compatible with standard 5 V and 3.3 V logic-level drivers. No level-shifting circuitry is required for MCU or PWM controller interfacing.

How is the SO-8 package thermally enhanced in this MOSFET?

The SO-8 package uses five parallel drain pins (pins 3–8) as an integrated thermal path, with RθJC = 12°C/W measured from junction to case. The exposed drain metal allows direct thermal coupling to PCB copper pours or external heatsinks, enabling 1.6 W steady-state dissipation without additional thermal vias.

Is DMT6009LSS suitable for automotive applications?

While not AEC-Q101 qualified, DMT6009LSS meets key automotive requirements: it is halogen- and antimony-free, RoHS-compliant, and rated for TJ = –55°C to +150°C. It is commonly used in non-safety-critical automotive subsystems like infotainment power supplies and interior lighting, subject to customer qualification.

DMT6009LSS-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 10.8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9.5mOhm @ 13.5A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1925 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

DMT6009LSS-13 FAQ

1.How can I place an order for DMT6009LSS-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6009LSS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6009LSS-13 reliable?

The price and inventory of DMT6009LSS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6009LSS-13 is usually 5 days.

3.What payment methods are accepted for DMT6009LSS-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6009LSS-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6009LSS-13?

DMT6009LSS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6009LSS-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6009LSS-13?

For technical support, including DMT6009LSS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6009LSS-13 requirements.

6.How does Aetrix verify that DMT6009LSS-13 is sourced from the original manufacturer or authorized distributors?

All DMT6009LSS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6009LSS-13 meets industry standards.

7.What is the process for return or replacement of DMT6009LSS-13?

All DMT6009LSS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6009LSS-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6009LSS-13 part is unused and in its original packaging.

Return procedure for DMT6009LSS-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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