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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT6010LFG-13

Name: DMT6010LFG-13
Brand: Diodes Incorporated
SKU: DMT6010LFG-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT6010LFG-13

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT6010LFG-13.pdf

Description:: MOSFET N-CH 60V 13A PWRDI3333

Quantity:: RFQ Add To RFQ list

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Inventory:5,231

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Product details

Overview

DMT6010LFG-13 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI^®3333-8 package, rated for 30A continuous drain current at T_C = +25°C, with R_DS(ON) of 7.5 mΩ @ V_GS = 10V and 11.5 mΩ @ V_GS = 4.5V. It delivers low conduction loss and high switching efficiency for synchronous rectification in DC-DC converters.

For engineers reviewing the DMT6010LFG-13 datasheet, DMT6010LFG-13 pinout, DMT6010LFG-13 application, or DMT6010LFG-13 equivalent, key selection criteria include its 60V BVDSS rating, thermally efficient PowerDI3333-8 footprint, 100% UIS-tested robustness, and Q_GD × R_DS(ON) figure-of-merit optimized for high-frequency power conversion.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(ON) while maintaining fast switching transitions. Its gate threshold voltage (0.8–2.0 V) enables compatibility with 3.3 V and 5 V logic-level drive, and its 38.5 pF Crss supports stable operation in hard-switched topologies.

The device integrates a robust body diode with 1.2 V forward voltage at 20 A and is characterized for avalanche energy (E_AS = 20 mJ) and pulsed drain current (I_DM = 80 A), confirming suitability for inductive load handling in compact power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60 V - Withstands up to 60 V drain-source blocking voltage without breakdown, enabling use in 48 V bus and PoE+ systems.
RDS(ON)	7.5 mΩ @ VGS = 10 V - Minimizes I²R conduction loss in high-current paths; enables <1.2 W loss at 20 A.
ID (TC = 25°C)	30 A - Supports high-power density designs where thermal management leverages PCB copper area via exposed drain pad.
QG (VGS = 10 V)	41.3 nC - Determines gate drive power requirement; pairs with low RG (0.59 Ω) for fast turn-on/turn-off control.
RθJC	3 °C/W - Enables direct junction-to-case thermal path to heatsink or copper plane, critical for sustained 24 W dissipation.
EAS	20 mJ - Guarantees reliable unclamped inductive switching performance in flyback and buck-boost converters.
VGS(TH)	0.8–2.0 V - Ensures turn-on with standard logic-level drivers and avoids false triggering under noise or leakage conditions.

Pinout & Package

Package: PowerDI^®3333-8 - Thermally enhanced surface-mount package with exposed drain pad, occupying only 33% board area of SO-8, UL 94V-0 rated, and moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally paralleled pins forming low-inductance, high-current drain connection to exposed thermal pad.
8	Source (S)	Single-source terminal; connects to ground reference and provides return path for body diode conduction.
Gate (G)	Control input	Terminal 1 is gate; verified by top-view marking diagram and pin 1 indicator on datasheet page 2.

Key Features

Feature	Design Value
Low R_DS(ON) × Q_GD FOM	29.7 mΩ·nC - Reduces combined conduction and switching losses in high-frequency (>500 kHz) DC-DC stages.
100% UIS tested	20 mJ E_AS at L = 0.1 mH - Eliminates need for external snubbers in synchronous rectifier applications.
PowerDI^®3333-8 footprint	3.3 mm × 3.3 mm × 0.8 mm - Enables >2× higher power density vs. SO-8 while maintaining solder joint reliability.
Lead-free & halogen-free	<900 ppm Br, <900 ppm Cl, <1000 ppm Sb - Complies with RoHS 3 and automotive green material requirements.

Applications

Synchronous Rectifier

DC-DC Converter

Use Scenario: Secondary-side rectification in isolated 48 V–12 V buck-derived converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Low-loss unidirectional switch replacing Schottky diode; driven synchronously with primary-side controller timing.

Use Value: Achieves >3% efficiency gain over 40 V Schottky due to 7.5 mΩ R_DS(ON), reducing thermal stress on secondary PCB area.

Use Scenario: High-current step-down regulation in industrial PLC power modules operating at 300 kHz–1 MHz.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by PWM signal; operates in continuous conduction mode.

Use Value: Delivers 25 A output with <1.5 W conduction loss at full load, enabled by 11.5 mΩ R_DS(ON) at 4.5 V gate drive.

LED Backlight Driver

USB-C PD Power Path

Use Scenario: Constant-current LED string switching in automotive center-stack displays with 24 V input.

IC Role / Device Role / Timing Role: PWM-controlled current sink switch; handles repetitive 100 ns–1 μs pulses with minimal dead-time loss.

Use Value: Enables precise dimming control with <0.5% duty-cycle error due to fast t_F = 9.7 ns and low Crss = 38.5 pF.

Use Scenario: Input protection and power-path OR-ing in dual-input USB-C PD adapters supporting 20 V/5 A delivery.

IC Role / Device Role / Timing Role: Load switch managing hot-swap sequencing and reverse-current blocking between sources.

Use Value: Prevents backfeed with 1.2 V V_SD body diode forward drop and withstands 60 V transients per USB-C spec.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMT6009LFG-13	R_DS(ON) = 6.0 mΩ @ 10 V (lower), ID = 32 A, same PowerDI3333-8 package	Higher current capability; marginally higher Q_G (44.5 nC) increases gate drive demand	Select when >30 A peak current or <6 mΩ R_DS(ON) is required; verify gate driver slew rate.
DMN6010LFG-7	Same die, SO-8 package; R_DS(ON) identical but R_θJA = 62 °C/W (vs. 55 °C/W for PowerDI3333-8)	Larger footprint (5.0 × 6.0 mm); lower thermal efficiency limits continuous current to 22 A at T_A	Choose only if legacy SO-8 layout reuse is mandatory; expect ~15% lower power density and higher board temperature rise.

Compared with DMT6010LFG-13, DMT6009LFG-13 offers lower conduction loss at cost of slightly higher switching charge, while DMN6010LFG-7 trades thermal performance and size for package compatibility-making the original optimal for new high-density, thermally constrained designs.

Availability

DMT6010LFG-13 is available at Aetrix Electronics and suitable for synchronous rectifiers, DC-DC converters, and LED backlighting requiring stable component supply, AEC-Q101-ready sourcing, and lead-free compliance.

Supply support for DMT6010LFG-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

This MOSFET belongs to Diodes' PowerMOS™ portfolio, engineered specifically for high-efficiency, high-frequency power conversion in space-constrained industrial and computing applications.

FAQ

What is the maximum safe operating junction temperature for DMT6010LFG-13?

The device is rated for TJ from –55°C to +150°C. Continuous operation at 150°C requires thermal design ensuring RθJA ≤ 35°C/W for 2.2 W ambient dissipation or RθJC ≤ 3°C/W with adequate case cooling. Derating curves in Figure 5 confirm RDS(ON) remains within 1.3× nominal up to 150°C.

Does DMT6010LFG-13 support 3.3 V logic-level gate drive?

Yes-its VGS(TH) range (0.8–2.0 V) ensures reliable turn-on with 3.3 V drive, and RDS(ON) = 11.5 mΩ @ VGS = 4.5 V confirms strong enhancement at low gate voltages. However, full 7.5 mΩ performance requires 10 V drive; verify gate driver output swing and current capability.

Is the PowerDI3333-8 package compatible with standard reflow profiles?

Yes-the package is qualified for IPC/JEDEC J-STD-020 Level 1 moisture sensitivity and supports standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C). The matte tin annealed terminals meet MIL-STD-202 Method 208 solderability requirements.

Can DMT6010LFG-13 replace SO-8 MOSFETs without PCB redesign?

No-PowerDI3333-8 (3.3 × 3.3 mm) is not footprint-compatible with SO-8 (5.0 × 6.0 mm). While it occupies 33% less board area, pad layout, thermal relief, and stencil aperture must be redesigned per Diodes' recommended footprint (D2 = 2.27 mm, E2 = 1.61 mm, C = 0.65 mm).

DMT6010LFG-13 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2090 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 41W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMT6010LFG-13 FAQ

1.How can I place an order for DMT6010LFG-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6010LFG-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6010LFG-13 reliable?

The price and inventory of DMT6010LFG-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6010LFG-13 is usually 5 days.

3.What payment methods are accepted for DMT6010LFG-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6010LFG-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6010LFG-13?

DMT6010LFG-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6010LFG-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6010LFG-13?

For technical support, including DMT6010LFG-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6010LFG-13 requirements.

6.How does Aetrix verify that DMT6010LFG-13 is sourced from the original manufacturer or authorized distributors?

All DMT6010LFG-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6010LFG-13 meets industry standards.

7.What is the process for return or replacement of DMT6010LFG-13?

All DMT6010LFG-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6010LFG-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6010LFG-13 part is unused and in its original packaging.

Return procedure for DMT6010LFG-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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