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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Diodes Incorporated DMT6010LFG-7

Name: DMT6010LFG-7
Brand: Diodes Incorporated
SKU: DMT6010LFG-7
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: DMT6010LFG-7

Manufacturer:: Diodes Incorporated

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: DMT6010LFG-7.pdf

Description:: MOSFET N-CH 60V 13A PWRDI3333

Quantity:: RFQ Add To RFQ list

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Inventory:3,549

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Product details

Overview

DMT6010LFG-7 from Diodes Incorporated is a 60V N-channel enhancement-mode MOSFET in PowerDI^®3333-8 package, rated for 30A continuous drain current at T_C = +25°C, with R_DS(ON) = 7.5 mΩ @ V_GS = 10V and 11.5 mΩ @ V_GS = 4.5V. It delivers low conduction loss and high switching efficiency for synchronous rectification and DC-DC converter power stages.

For engineers reviewing the DMT6010LFG-7 datasheet, DMT6010LFG-7 pinout, DMT6010LFG-7 application, or DMT6010LFG-7 equivalent, key selection criteria include its 60V BVDSS rating, thermally efficient PowerDI3333-8 footprint, 100% production-tested UIS robustness, and Q_GD × R_DS(ON) figure-of-merit optimized for high-frequency power conversion.

Technical Context

This MOSFET employs advanced trench-gate silicon technology to achieve low R_DS(ON) while maintaining fast switching transitions and low gate charge (Q_G = 41.3 nC @ 10V). Its 0.59 Ω gate resistance and 38.5 pF Crss support stable gate drive in hard-switched topologies.

The device features an integrated body diode with V_SD = 0.9–1.2 V @ I_S = 20A and is characterized for operation across –55°C to +150°C junction temperature range, with R_DS(ON) normalized variation ≤1.2× over full temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
BVDSS	60 V - Maximum blocking voltage before avalanche onset; enables use in 48V bus and PoE-powered systems.
RDS(ON) @ 10V	7.5 mΩ - Low on-resistance minimizes I²R conduction loss in high-current power switches.
ID (TC=25°C)	30 A - Continuous drain current capability at case temperature; supports compact thermal design with external heatsinking.
QG @ 10V	41.3 nC - Total gate charge determines driver strength requirement and switching loss trade-off.
Crss	38.5 pF - Reverse transfer capacitance directly impacts Miller effect and turn-off speed in hard-switched converters.
EAS	20 mJ - Avalanche energy rating confirms ruggedness under inductive load switching stress.
RθJC	3 °C/W - Junction-to-case thermal resistance enables accurate thermal modeling when mounted to PCB copper or heatsink.

Pinout & Package

Package: PowerDI^®3333-8 - thermally enhanced 8-pin surface-mount package with exposed drain pad; occupies only 33% board area of SO-8; UL 94V-0 molded compound; matte tin annealed terminals.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Internally connected to common drain terminal and exposed thermal pad; primary current path and heat sink interface.
8	Source (S)	Source connection for channel current return; used as reference node for gate drive and sensing.
Gate (G)	Gate (G)	Control terminal; requires <±20 V max gate-source voltage; driven via low-impedance path to minimize ringing.

Key Features

Feature	Design Value
Low R_DS(ON) @ 4.5V	11.5 mΩ - Enables efficient operation with 5V logic-level gate drive in battery-powered and USB-PD systems.
Q_GD × R_DS(ON) FOM	~102 mΩ·nC - Optimized switching figure-of-merit reduces combined conduction and switching losses in MHz-range converters.
100% UIS tested	20 A / 0.1 mH - Production-tested unclamped inductive switching ensures reliability in real-world flyback and buck-boost applications.
Thermal footprint	3.3 mm × 3.3 mm - Compact PowerDI3333-8 outline allows high-density layout without sacrificing thermal performance.

Applications

Synchronous Rectifier

DC-DC Converter Switch

Use Scenario: Secondary-side switch in isolated 48V-to-12V LLC resonant converter for server PSU.

IC Role / Device Role / Timing Role: High-side synchronous rectifier replacing Schottky diode to reduce forward voltage drop and improve efficiency.

Use Value: Achieves >0.8% efficiency gain at full load vs. 40V Schottky due to 7.5 mΩ R_DS(ON) and low V_SD.

Use Scenario: High-side switch in 12V input, 3.3V output buck converter for FPGA core supply.

IC Role / Device Role / Timing Role: Main power switch operating at 500 kHz with 10V gate drive from integrated controller.

Use Value: Delivers 94.2% peak efficiency at 25A output thanks to low Q_G/R_DS(ON) balance and minimal Crss-induced delay.

Automotive LED Backlight Driver

Industrial PoE PD Switch

Use Scenario: PWM-controlled current sink for 48V automotive LCD backlight strings.

IC Role / Device Role / Timing Role: Low-side switching element modulating LED current with 100–1000 Hz duty cycle.

Use Value: Maintains <1.2°C junction rise at 20A pulsed current due to R_θJC = 3 °C/W and robust 150°C T_JMAX.

Use Scenario: Primary-side switch in IEEE 802.3bt Type 4 PoE powered device (PD) interface.

IC Role / Device Role / Timing Role: Hot-swap MOSFET enabling inrush current limiting and fault isolation during signature detection.

Use Value: Withstands 80A pulsed drain current and 20 mJ avalanche energy during cable surge events per IEEE 802.3bt Annex 138B.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay SI7157DP-T1-GE3	60V, 7.2 mΩ @ 10V, 32A, PowerPAK^® SO-8; higher C_iss (2350 pF vs. 2090 pF).	Requires stronger gate driver due to 45 nC Q_G; less optimal for >1 MHz switching.	Prefer for lower R_DS(ON) where gate drive capability permits.
ON Semiconductor NTMFS5C675NL	60V, 6.7 mΩ @ 10V, 35A, PowerTrench^® 5x6mm; 100% UIS qualified but no Crss spec published.	Larger footprint (5×6 mm) limits board density; lacks published Crss for Miller analysis.	Prefer when absolute lowest R_DS(ON) is critical and space allows larger package.

Compared with SI7157DP and NTMFS5C675NL, DMT6010LFG-7 offers best-in-class Q_GD × R_DS(ON) FOM and smallest footprint among 60V/30A devices, making it optimal for high-frequency, space-constrained DC-DC designs requiring proven UIS robustness.

Availability

DMT6010LFG-7 is available at Aetrix Electronics and suitable for synchronous rectifiers, DC-DC converter switches, and industrial PoE-powered device interfaces requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for DMT6010LFG-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and distribution operations across Asia, Europe, and North America.

This device belongs to Diodes' Power MOSFET product line, engineered specifically for high-efficiency, high-density power conversion in computing, communications, and industrial systems where thermal performance and switching fidelity are critical.

FAQ

What is the maximum gate-source voltage rating for DMT6010LFG-7?

The absolute maximum gate-source voltage (V_GSS) is ±20 V. Exceeding this rating risks permanent gate oxide damage. Recommended gate drive is 4.5 V to 10 V for optimal R_DS(ON) and switching loss balance, with transient overshoot limited to <±15 V using proper PCB layout and gate resistor selection.

Does DMT6010LFG-7 have an integrated ESD protection diode on the gate?

No-DMT6010LFG-7 does not include integrated gate ESD protection. The gate oxide is rated for human-body-model (HBM) ESD per JESD22-A114, but external gate protection (e.g., Zener clamp or RC snubber) is recommended in high-noise environments or manual handling scenarios to prevent electrostatic damage.

Can DMT6010LFG-7 be used in linear (analog) mode operation?

Yes-it is characterized for safe operating area (SOA) up to 100 ms pulse width at T_C = 25°C, supporting linear-mode applications such as hot-swap controllers or electronic fuses. However, sustained linear operation requires careful thermal derating based on R_θJC = 3 °C/W and ambient conditions, as power dissipation exceeds 2.2 W at case temperature.

Is the PowerDI3333-8 package lead-free and RoHS-compliant?

Yes-DMT6010LFG-7 is fully lead-free and compliant with EU RoHS Directive 2015/863/EU (RoHS 3), with <900 ppm bromine, <900 ppm chlorine, and <1000 ppm antimony. Terminal finish is matte tin annealed over copper leadframe, solderable per MIL-STD-202, Method 208, and moisture sensitivity level is 1 per J-STD-020.

DMT6010LFG-7 Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2090 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2.2W (Ta), 41W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: POWERDI3333-8

DMT6010LFG-7 FAQ

1.How can I place an order for DMT6010LFG-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for DMT6010LFG-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for DMT6010LFG-7 reliable?

The price and inventory of DMT6010LFG-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6010LFG-7 is usually 5 days.

3.What payment methods are accepted for DMT6010LFG-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6010LFG-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for DMT6010LFG-7?

DMT6010LFG-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your DMT6010LFG-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for DMT6010LFG-7?

For technical support, including DMT6010LFG-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6010LFG-7 requirements.

6.How does Aetrix verify that DMT6010LFG-7 is sourced from the original manufacturer or authorized distributors?

All DMT6010LFG-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6010LFG-7 meets industry standards.

7.What is the process for return or replacement of DMT6010LFG-7?

All DMT6010LFG-7 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6010LFG-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The DMT6010LFG-7 part is unused and in its original packaging.

Return procedure for DMT6010LFG-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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