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Diodes Incorporated DMT6010LPS-13
- Part No.:
- DMT6010LPS-13
- Manufacturer:
- Diodes Incorporated
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerTDFN
- Datasheet:
-
DMT6010LPS-13.pdf
- Description:
- MOSFET N-CH 60V 13.5A PWRDI5060
- Quantity:
- Payment:
- Shipping:
Inventory:3,135
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Product details
Overview
DMT6010LPS-13 from Diodes Incorporated is a 60V N-channel enhancement-mode power MOSFET in PowerDI5060-8 package, delivering 8 mΩ RDS(ON) at VGS = 10 V and 80 A continuous drain current at TC = +25°C. It features low gate charge (41.3 nC at VGS = 10 V), fast switching (tD(OFF) = 23.4 ns), and thermally efficient thermal resistance (RθJC = 1.1 °C/W), making it suitable for high-efficiency notebook battery power management and load-switch applications.
For engineers reviewing the DMT6010LPS-13 datasheet, DMT6010LPS-13 pinout, DMT6010LPS-13 application, or DMT6010LPS-13 equivalent, key selection criteria include RDS(ON) at 4.5 V (12 mΩ), body diode recovery charge (QRR = 38.2 nC), safe operating area (SOA) limits up to 125 A pulsed, junction-to-case thermal performance, and PowerDI5060-8 footprint compatibility with thin-profile PCB designs.
Technical Context
This MOSFET employs a trench-gate silicon process optimized for low conduction loss and controlled switching behavior. Its gate threshold voltage (VGS(TH) = 1–3 V) enables reliable turn-on with standard logic-level drivers, while its low Ciss (2090 pF) and Crss (38.5 pF) support high-frequency DC-DC converter operation without excessive gate drive loss.
The device integrates an intrinsic body diode with VSD = 0.9–1.2 V at 20 A and tRR = 35.4 ns, enabling synchronous rectification and bidirectional current handling in load-switch configurations. Its RDS(ON) exhibits <15% variation across –55°C to +150°C, ensuring stable on-resistance in wide-temperature industrial and computing environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Withstands up to 60 V drain-source blocking voltage before avalanche onset |
| RDS(ON) | 8 mΩ @ VGS = 10 V - Enables ≤0.32 W conduction loss at 20 A, critical for high-current load switches |
| ID (TC = 25°C) | 80 A - Supports high-current battery path switching without external heatsink under case-cooled conditions |
| Qg | 41.3 nC @ VGS = 10 V - Determines gate driver power requirement and switching speed in hard-switched topologies |
| RθJC | 1.1 °C/W - Allows direct thermal coupling to PCB copper or heatsink for >100 W power dissipation capability |
| tRR | 35.4 ns - Limits reverse-recovery energy loss during commutation in synchronous buck converters |
| PD (TC = 25°C) | 113 W - Maximum steady-state power dissipation when mounted on thermally optimized copper pad |
Pinout & Package
Package: PowerDI5060-8 - Thermally enhanced 8-pin surface-mount package with exposed drain pad for low RθJC; height <1.1 mm for ultra-thin notebook and portable electronics integration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 5, 6, 7, 8 | Drain (D) | Seven parallel drain terminals connected to internal die and exposed thermal pad - primary current path and thermal conduction path to PCB |
| 4 | Gate (G) | Single gate input controlling channel conduction - requires <41.3 nC charge for full turn-on at 10 V |
| - (exposed pad) | Source (S) | Common source connection formed by soldered bottom-side metal - provides low-inductance return path and mechanical anchoring |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(ON) at 4.5 V | 12 mΩ - Enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting |
| Thermally optimized package | RθJC = 1.1 °C/W - Reduces junction temperature rise by >50% vs. SO-8 equivalents under same power dissipation |
| Fast body diode recovery | tRR = 35.4 ns - Minimizes shoot-through risk and EMI in synchronous rectifier designs |
| Thin profile | Max height = 1.1 mm - Fits within 1.2 mm Z-height constraints of ultrabook and tablet mainboards |
| Green compliance | Halogen- and antimony-free, RoHS 3 compliant - Meets IPC-1752A material declaration requirements |
Applications
| Notebook Battery Protection | High-Current Load Switch |
|---|---|
Use Scenario: Bidirectional battery protection circuit in Windows-based ultrabooks, managing charge/discharge paths between battery pack and system rail. IC Role / Device Role / Timing Role: Primary high-side switch controlling battery isolation during overvoltage, overcurrent, or thermal fault events. Use Value: 8 mΩ RDS(ON) limits voltage drop to <160 mV at 20 A, preserving battery runtime and reducing thermal stress on protection ICs. | Use Scenario: System-level power rail enable/disable for GPU or SSD modules in mobile workstations. IC Role / Device Role / Timing Role: Low-loss, fast-turning load switch activated by PMIC GPIO to sequence power domains. Use Value: 23.4 ns turn-off delay ensures clean power-down timing alignment with SoC reset signals, preventing latch-up. |
| DC-DC Synchronous Rectifier | USB-C Power Delivery Switch |
Use Scenario: Secondary-side synchronous rectification in 48 V–12 V buck converters for server VRMs and AI accelerators. IC Role / Device Role / Timing Role: Low-VDS rectifying switch replacing Schottky diodes to improve efficiency above 10 A. Use Value: 38.2 nC QRR and 35.4 ns tRR reduce reverse-recovery losses by >65% vs. comparable 60 V MOSFETs, boosting light-load efficiency. | Use Scenario: 20 V/5 A USB-C PD 3.1 power path switch in docking stations and portable monitors. IC Role / Device Role / Timing Role: High-reliability, low-RDS(ON) switch enabling programmable voltage/current negotiation and fault isolation. Use Value: 125 A pulsed rating and SOA-rated operation up to 10 ms pulses ensure robustness against hot-plug inrush and short-circuit transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMT6006LPS-13 | Lower RDS(ON) (6 mΩ @ 10 V), higher Qg (52.5 nC), same package | Better conduction loss but slower switching; suited for lower-frequency, higher-current rails | Select when thermal budget dominates over switching loss, e.g., battery discharge path with <500 kHz PWM |
| SiR626DP-T1-GE3 | 60 V, 5.8 mΩ @ 10 V, PowerPAK® SO-8, RθJC = 1.4 °C/W | Larger footprint, higher thermal resistance, no exposed drain pad | Choose only if legacy SO-8 layout reuse is mandatory and thermal margin ≥15°C is available |
Compared with DMT6010LPS-13, DMT6006LPS-13 trades gate drive energy for lower conduction loss, while SiR626DP-T1-GE3 sacrifices thermal performance and thinness for board-level compatibility - making DMT6010LPS-13 optimal for space-constrained, thermally aggressive notebook and PD applications.
Availability
DMT6010LPS-13 is available at Aetrix Electronics and suitable for notebook battery management, high-current load switching, and USB-C power delivery systems requiring stable component supply, JEDEC-qualified reliability, and RoHS 3 compliance.
Supply support for DMT6010LPS-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for computing, industrial, and consumer markets.
The PowerDI5060-8 MOSFET product line targets thin-profile, high-current power management in portable electronics - designed to replace SO-8 and TO-252 devices where thermal density and Z-height are critical constraints.
FAQ
What is the maximum continuous drain current at TA = +70°C?
The DMT6010LPS-13 supports 11 A continuous drain current at ambient temperature +70°C with standard FR-4 mounting (2 oz copper, 1-inch² thermal pad). This rating reflects derating due to reduced thermal dissipation in still-air conditions and must be validated against actual board layout and airflow.
Does this MOSFET require a gate resistor for stability in load-switch applications?
A gate resistor (typically 10–47 Ω) is recommended to dampen ringing caused by gate loop inductance and Miller capacitance interaction. The device's 0.59 Ω intrinsic gate resistance and 38.5 pF Crss make it susceptible to oscillation without proper gate drive impedance control, especially at high dV/dt edges.
Can DMT6010LPS-13 be used in automotive-grade designs?
No - DMT6010LPS-13 is not AEC-Q101 qualified. Diodes offers automotive-grade variants (e.g., DMT6010LPSQ-13) with PPAP documentation, IATF 16949 manufacturing, and extended temperature validation. Use only the Q-suffix version for automotive applications per the manufacturer's automotive product portal.
How does the PowerDI5060-8 package improve thermal performance over SO-8?
The PowerDI5060-8 exposes the drain pad directly to the PCB, achieving RθJC = 1.1 °C/W - over 3× better than typical SO-8 (RθJC ≈ 3.5 °C/W). This allows >100 W power handling with minimal external heatsinking, whereas SO-8 would require thermal vias and large copper areas to achieve comparable junction temperatures.
DMT6010LPS-13 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- 8-PowerTDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.5A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 41.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2090 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.2W (Ta), 113W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PowerDI5060-8
DMT6010LPS-13 FAQ
1.How can I place an order for DMT6010LPS-13 through Aetrix?
Please submit a Request for Quotation (RFQ) for DMT6010LPS-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for DMT6010LPS-13 reliable?
The price and inventory of DMT6010LPS-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for DMT6010LPS-13 is usually 5 days.
3.What payment methods are accepted for DMT6010LPS-13?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for DMT6010LPS-13 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for DMT6010LPS-13?
DMT6010LPS-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your DMT6010LPS-13 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for DMT6010LPS-13?
For technical support, including DMT6010LPS-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your DMT6010LPS-13 requirements.
6.How does Aetrix verify that DMT6010LPS-13 is sourced from the original manufacturer or authorized distributors?
All DMT6010LPS-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that DMT6010LPS-13 meets industry standards.
7.What is the process for return or replacement of DMT6010LPS-13?
All DMT6010LPS-13 units undergo pre-shipment inspection (PSI). If there is an issue with DMT6010LPS-13, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The DMT6010LPS-13 part is unused and in its original packaging.
Return procedure for DMT6010LPS-13:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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