Diodes Incorporated DMT6010SCT

Overview

DMT6010SCT from Diodes Incorporated is a 60V N-channel enhancement-mode power MOSFET in TO220-3 package, rated for 98A continuous drain current at T_C = +25°C, with R_DS(ON) of 7.2 mΩ at V_GS = 10V and 20A. It features low input capacitance (1940 pF), fast switching (t_D(ON) = 5.7 ns), and 100% unclamped inductive switching capability-optimized for high-efficiency DC-DC converters and automotive body control electronics.

For engineers reviewing the DMT6010SCT datasheet, DMT6010SCT pinout, DMT6010SCT application, or DMT6010SCT equivalent, key selection criteria include its 1.2°C/W junction-to-case thermal resistance, 20A avalanche energy rating (E_AS = 20 mJ), gate threshold voltage range (2–4 V), and RoHS-compliant, halogen-free "Green" construction.

Technical Context

This MOSFET employs planar silicon technology with optimized channel geometry to achieve low R_DS(ON) while maintaining robust avalanche ruggedness. Its gate charge profile (Q_G = 36.3 nC, Q_GD = 10.5 nC) supports high-frequency synchronous rectification in buck converters up to 500 kHz.

The device operates across –55°C to +150°C junction temperature range and delivers stable on-resistance over temperature (normalized R_DS(ON) variation <1.8× from –55°C to +150°C at V_GS = 10V). Its body diode exhibits low forward voltage (V_SD = 1.3 V at I_S = 20A) and 35.6 ns reverse recovery time-critical for freewheeling in hard-switched topologies.

Key Specifications

Pinout & Package

Package: TO220-3, through-hole, single-ended heat sink mount. Molded plastic case with matte tin-plated copper leadframe; UL 94V-0 rated.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP90NF55-08 and IRFZ44NPBF, DMT6010SCT delivers superior high-frequency efficiency via lower Q_G and C_ISS, higher avalanche energy margin, and better thermal performance in standard TO220-3 mounting-making it optimal for automotive and industrial power stages requiring both density and reliability.

Availability

DMT6010SCT is available at Aetrix Electronics and suitable for engine management systems, body control electronics, and DC-DC converters requiring stable component supply, automotive-grade environmental compliance, and proven avalanche ruggedness.

Supply support for DMT6010SCT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The DMT6010SCT belongs to Diodes' high-voltage power MOSFET product line, engineered specifically for automotive and industrial power conversion where low conduction loss, fast switching, and robust transient handling are mandatory.

FAQ

What is the maximum safe operating temperature for DMT6010SCT?

The DMT6010SCT has a specified junction temperature range of –55°C to +150°C. Its absolute maximum rating is TJ = +150°C, and operation beyond this limit risks permanent degradation of R_DS(ON) and avalanche capability. Thermal design must ensure TJ remains ≤150°C under worst-case ambient and power dissipation conditions, using the 1.2°C/W R_θJC value with appropriate heatsink interface.

Does DMT6010SCT support logic-level gate drive?

Yes-its gate threshold voltage V_GS(TH) is specified from 2 V to 4 V, enabling reliable turn-on with 3.3 V or 5 V microcontroller outputs. However, full enhancement to 7.2 mΩ R_DS(ON) requires V_GS ≥ 10 V; for logic-level-only systems, derating to ~12 mΩ at V_GS = 4.5 V should be verified per Figure 4 in the datasheet.

Is the metal tab electrically connected to any internal terminal?

Yes-the TO220-3 metal tab is internally connected to the Drain terminal. This is confirmed by the "Top View Pin Out Configuration" diagram in the datasheet and standard TO220-3 mechanical convention. Electrical isolation from the heatsink is required unless the drain node is at chassis ground potential.

What does "100% UIS tested" mean for DMT6010SCT?

"100% Unclamped Inductive Switching tested" means every unit undergoes production testing for avalanche capability at I_AS = 20 A and E_AS = 20 mJ (L = 0.1 mH), ensuring each device meets minimum ruggedness requirements without external clamping components-critical for automotive solenoid and motor control reliability.